Role of resonant laser enhanced surface kinetics in the low substrate temperature molecular beam epitaxial growth of compound semiconductors: A Monte Carlo study

1985 ◽  
Vol 46 (6) ◽  
pp. 577-579 ◽  
Author(s):  
Jasprit Singh ◽  
K. K. Bajaj
Keyword(s):  
Monte Carlo ◽  
Molecular Beam ◽  
Monte Carlo Study ◽  
Compound Semiconductors ◽  
Surface Kinetics ◽  
Molecular Beam Epitaxial ◽  
Resonant Laser ◽  
Molecular Beam Epitaxial Growth ◽  
Enhanced Surface

Role of substrate temperature in molecular‐beam epitaxial growth of high‐power GaAs/AlGaAs lasers

1992 ◽  
Vol 60 (4) ◽  
pp. 416-418 ◽  
Author(s):  
S. V. Iyer ◽  
H. P. Meier ◽  
Shlomo Ovadia ◽  
C. Parks ◽  
D. J. Arent ◽  
...  
Keyword(s):  
Substrate Temperature ◽  
Epitaxial Growth ◽  
High Power ◽  
Molecular Beam ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth

Molecular beam epitaxial growth of GaAs and other compound semiconductors

1991 ◽  
Vol 205 (2) ◽  
pp. 182-212 ◽  
Author(s):  
K. Adomi ◽  
J.-I. Chyi ◽  
S.F. Fang ◽  
T.C. Shen ◽  
S. Strite ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Molecular Beam ◽  
Compound Semiconductors ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth
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