Thermal atomic layer etching of metallic tungsten via oxidation and etch reaction mechanism using O2 or O3 for oxidation and WCl6 as the chlorinating etchant
2020 ◽
Vol 38
(2)
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pp. 022605
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1995 ◽
Vol 13
(3)
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pp. 966-971
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Keyword(s):
2013 ◽
Vol 31
(6)
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pp. 061310
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Keyword(s):
2017 ◽
Vol 9
(39)
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pp. 34435-34447
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2017 ◽
Vol 35
(5)
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pp. 05C302
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