Highly selective Si3N4/SiO2 etching using an NF3/N2/O2/H2 remote plasma. I. Plasma source and critical fluxes
2020 ◽
Vol 38
(2)
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pp. 023007
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2020 ◽
Vol 38
(2)
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pp. 023008
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2019 ◽
Vol 37
(4)
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pp. 040601
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2007 ◽
Vol 40
(17)
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pp. 5140-5154
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2010 ◽
Vol 28
(4)
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pp. 856-860
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2021 ◽
Vol 39
(6)
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pp. 062403
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