High-temperature magnetoresistance study of a magnetic tunnel junction

2006 ◽  
Vol 304 (1) ◽  
pp. e297-e299
Author(s):  
D.C. Chen ◽  
Y.D. Yao ◽  
C.M. Chen ◽  
James Hung ◽  
Y.S. Chen ◽  
...  
Keyword(s):  
High Temperature ◽  
Tunnel Junction ◽  
Magnetic Tunnel Junction

High-Temperature Magnetic Tunnel Junction Magnetometers Based on L1$_0$-PtMn Pinned Layer

2020 ◽  
Vol 4 (5) ◽  
pp. 1-4
Author(s):  
Sina Ranjbar ◽  
Muftah Al-Mahdawi ◽  
Mikihiko Oogane ◽  
Yasuo Ando
Keyword(s):  
High Temperature ◽  
Tunnel Junction ◽  
Magnetic Tunnel Junction

Addressing the Challenges of Using Ferromagnetic Electrodes in Molecular Devices

MRS Advances ◽  
2016 ◽  
Vol 1 (7) ◽  
pp. 483-488
Author(s):  
Pawan Tyagi ◽  
Edward Friebe ◽  
Collin Baker
Keyword(s):  
High Temperature ◽  
Tunnel Junction ◽  
Chemical Bonding ◽  
Chemical Etching ◽  
Magnetic Tunnel Junction ◽  
Device Fabrication ◽  
Molecular Devices ◽  
Molecular Device ◽  
Experimental Development ◽  
Ferromagnetic Electrodes

ABSTRACTFerromagnetic (FM) electrodes chemically anchored with thiol functionalized molecules can yield novel molecular spintronics devices (MSDs). However, significant challenges lie in developing commercially viable MSD fabrication approach utilizing FM electrodes. A practical MSD fabrication approach should consider FM electrodes’ susceptibility to oxidation, chemical etching, and stress induced deformations during fabrication and usage. This paper will discuss NiFe, an alloy used in the present day memory devices and high-temperature engineering applications, as a candidate for FM electrode and for the fabrication of MSDs. Our spectroscopic reflectance studies show that NiFe starts oxidizing aggressively beyond ∼90 ⁰C. The NiFe surfaces, aged for several months or heated for several minutes below ∼90 ⁰C, were suitable for chemical bonding with the thiol-functionalized molecules. NiFe also demonstrated excellent etching resistance in widely used dichloromethane solvent for dissolving molecular device elements. NiFe also reduced the mechanical stress induced deformities in other FM metals like cobalt. This paper also discusses the successful utilization of NiFe electrodes in the magnetic tunnel junction based molecular device fabrication approach. This research is expected to address the knowledge gap blocking the experimental development of FM based MSDs.

Normalization and correction factors for magnetic tunnel junction sensor performances comparison

2021 ◽  
pp. 1-1
Author(s):  
E. Monteblanco ◽  
A. Solignac ◽  
C. Chopin ◽  
J. Moulin ◽  
P. Belliot ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Correction Factors

scholarly journals Nanoscale domain wall devices with magnetic tunnel junction read and write

2021 ◽  
Vol 4 (6) ◽  
pp. 392-398 ◽  
Author(s):  
E. Raymenants ◽  
O. Bultynck ◽  
D. Wan ◽  
T. Devolder ◽  
K. Garello ◽  
...  
Keyword(s):  
Domain Wall ◽  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Domain Wall Devices

scholarly journals A Dual Magnetic Tunnel Junction‐Based Neuromorphic Device

2020 ◽  
Vol 2 (12) ◽  
pp. 2070120
Author(s):  
Jeongmin Hong ◽  
Xin Li ◽  
Nuo Xu ◽  
Hong Chen ◽  
Stefano Cabrini ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Magnetic Tunnel Junction
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