Surface reaction mechanisms during atomic layer deposition of zirconium oxide using water, ethanol, and water-ethanol mixture as the oxygen sources

2020 ◽  
Vol 38 (1) ◽  
pp. 012401 ◽  
Author(s):  
Wanxing Xu ◽  
Paul C. Lemaire ◽  
Kashish Sharma ◽  
Dennis M. Hausmann ◽  
Sumit Agarwal
Keyword(s):  
Atomic Layer Deposition ◽  
Reaction Mechanisms ◽  
Zirconium Oxide ◽  
Surface Reaction ◽  
Atomic Layer ◽  
Ethanol Mixture ◽  
Layer Deposition

Initial Surface Reactions Mechanisms of Atomic Layer Deposition TiO2 on H/Si(100)-2×1 Surface

2013 ◽  
Vol 750-752 ◽  
pp. 1052-1056 ◽  
Author(s):  
Guang Fen Zhou ◽  
Jie Ren ◽  
Shao Wen Zhang
Keyword(s):  
Density Functional Theory ◽  
Atomic Layer Deposition ◽  
Adsorption Energy ◽  
Reaction Mechanisms ◽  
Density Functional ◽  
Surface Reaction ◽  
Atomic Layer ◽  
Initial Surface ◽  
Functional Theory ◽  
Layer Deposition

The initial surface reaction mechanisms of atomic layer deposition TiO2on H/Si (100 )-2×1 surface using Ti (OCH3)4and H2O as precursors are investigated by density functional theory. The ALD process is divided into two half-reactions, i.e., Ti (OCH3)4and H2O half-reactions. The adsorption energy of Ti (OCH3)4on H/Si (100)2×1 surface is only-2.4 kJ/mol. The overall reaction of Ti (OCH3)4is exothermic, which indicates that Ti (OCH3)4half-reactions are favorable on thermodynamic. Howerver, H2O half-reactions are endothermic and thermodynamically unfavorable.

Initial Surface Reactions Mechanisms of Atomic Layer Deposition TiO2 Using Ti(OCH3)4 and H2O as Precursors

2013 ◽  
Vol 785-786 ◽  
pp. 832-836 ◽  
Author(s):  
Guang Fen Zhou ◽  
Jie Ren ◽  
Shao Wen Zhang
Keyword(s):  
Density Functional Theory ◽  
Atomic Layer Deposition ◽  
Reaction Mechanisms ◽  
Density Functional ◽  
Surface Reaction ◽  
Surface Reactions ◽  
Atomic Layer ◽  
Initial Surface ◽  
Functional Theory ◽  
Layer Deposition

The initial surface reaction mechanisms of atomic layer depositionTiO2using Ti (OCH3)4and H2O as the precursors are investigated by density functional theory. The ALD process is divided into two half-reactions, i.e., Ti (OCH3)4and H2O half-reactions. The adsorption of Ti (OCH3)4on OH/Si (100)2×1 surface is exothermic. However, the overall reaction of Ti (OCH3)4is endothermic. In addition, H2O half-reactions are endothermic and thermodynamically unfavorable.

Surface reaction mechanisms for atomic layer deposition of silicon nitride

2004 ◽  
Vol 557 (1-3) ◽  
pp. 159-170 ◽  
Author(s):  
Collin Mui ◽  
Yuniarto Widjaja ◽  
Jeung Ku Kang ◽  
Charles B. Musgrave
Keyword(s):  
Silicon Nitride ◽  
Atomic Layer Deposition ◽  
Reaction Mechanisms ◽  
Surface Reaction ◽  
Atomic Layer ◽  
Layer Deposition

Effect of Hydrogen on Hafnium Zirconium Oxide Fabricated by Atomic Layer Deposition Using H 2 O 2 Oxidant

2021 ◽  
pp. 2100020
Author(s):  
Hyoungkyu Kim ◽  
Seokjung Yun ◽  
Tae Ho Kim ◽  
Hoon Kim ◽  
Changdeuck Bae ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Zirconium Oxide ◽  
Atomic Layer ◽  
Layer Deposition
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