scholarly journals Evaluation of the chemical and optical perturbations induced by Ar plasma on InP surface

2019 ◽  
Vol 37 (6) ◽  
pp. 062902
Author(s):  
Solène Béchu ◽  
Céline Eypert ◽  
Anais Loubat ◽  
Jackie Vigneron ◽  
Sofia Gaiaschi ◽  
...  
Keyword(s):  
Ar Plasma ◽  
Inp Surface

n-channel formation on semi-insulating InP surface by m.i.s.f.e.t.

1979 ◽  
Vol 15 (23) ◽  
pp. 743 ◽  
Author(s):  
Tsuyoshi Kawakami ◽  
Masamichi Okamura
Keyword(s):  
Channel Formation ◽  
Inp Surface

scholarly journals Dry Etching Performance and Gas-Phase Parameters of C6F12O + Ar Plasma in Comparison with CF4 + Ar

Materials ◽  
2021 ◽  
Vol 14 (7) ◽  
pp. 1595
Author(s):  
Nomin Lim ◽  
Yeon Sik Choi ◽  
Alexander Efremov ◽  
Kwang-Ho Kwon
Keyword(s):  
Gas Phase ◽  
Photoelectron Spectroscopy ◽  
Reactive Ion Etching ◽  
Research Work ◽  
Optical Emission ◽  
Plasma Parameters ◽  
Ion Etching ◽  
Ar Plasma ◽  
Ar Gas ◽  
Etching Selectivity

This research work deals with the comparative study of C6F12O + Ar and CF4 + Ar gas chemistries in respect to Si and SiO2 reactive-ion etching processes in a low power regime. Despite uncertain applicability of C6F12O as the fluorine-containing etchant gas, it is interesting because of the liquid (at room temperature) nature and weaker environmental impact (lower global warming potential). The combination of several experimental techniques (double Langmuir probe, optical emission spectroscopy, X-ray photoelectron spectroscopy) allowed one (a) to compare performances of given gas systems in respect to the reactive-ion etching of Si and SiO2; and (b) to associate the features of corresponding etching kinetics with those for gas-phase plasma parameters. It was found that both gas systems exhibit (a) similar changes in ion energy flux and F atom flux with variations on input RF power and gas pressure; (b) quite close polymerization abilities; and (c) identical behaviors of Si and SiO2 etching rates, as determined by the neutral-flux-limited regime of ion-assisted chemical reaction. Principal features of C6F12O + Ar plasma are only lower absolute etching rates (mainly due to the lower density and flux of F atoms) as well as some limitations in SiO2/Si etching selectivity.

Microwave N2–Ar plasma torch. I. Modeling

2011 ◽  
Vol 109 (2) ◽  
pp. 023301 ◽  
Author(s):  
J. Henriques ◽  
E. Tatarova ◽  
C. M. Ferreira
Keyword(s):  
Plasma Torch ◽  
Ar Plasma

scholarly journals Effect of cold Ar plasma treatment on the catalytic performance of Pt/CeO2 in water-gas shift reaction (WGS)

2018 ◽  
Vol 225 ◽  
pp. 121-127 ◽  
Author(s):  
Laura Pastor-Pérez ◽  
Victor Belda-Alcázar ◽  
Carlo Marini ◽  
M. Mercedes Pastor-Blas ◽  
Antonio Sepúlveda-Escribano ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Catalytic Performance ◽  
Water Gas Shift ◽  
Water Gas Shift Reaction ◽  
Ar Plasma ◽  
Shift Reaction ◽  
Water Gas

A Comparative Study of Hydrophilic Modification of Polypropylene Membranes by Remote and Direct Ar Plasma

2009 ◽  
Vol 11 (5) ◽  
pp. 576-581 ◽  
Author(s):  
Zhang Suzhen ◽  
Cheng Cheng ◽  
Lan Yan ◽  
Meng Yuedong
Keyword(s):  
Comparative Study ◽  
Hydrophilic Modification ◽  
Ar Plasma

ChemInform Abstract: Inductively Coupled Ar Plasma Damage in AlGaAs.

ChemInform ◽  
2010 ◽  
Vol 28 (52) ◽  
pp. no-no
Author(s):  
J. W. LEE ◽  
D. HAYS ◽  
C. R. ABERNATHY ◽  
S. J. PEARTON ◽  
W. S. HOBSON ◽  
...  
Keyword(s):  
Plasma Damage ◽  
Inductively Coupled ◽  
Ar Plasma

Reflectivity dependence of threshold current in GaInAsP/InP surface emitting laser

1989 ◽  
Vol 1 (1) ◽  
pp. 11-13 ◽  
Author(s):  
M. Oshikiri ◽  
H. Kawasaki ◽  
F. Koyama ◽  
K. Iga
Keyword(s):  
Threshold Current ◽  
Surface Emitting Laser ◽  
Inp Surface
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