Reflectivity dependence of threshold current in GaInAsP/InP surface emitting laser

1989 ◽  
Vol 1 (1) ◽  
pp. 11-13 ◽  
Author(s):  
M. Oshikiri ◽  
H. Kawasaki ◽  
F. Koyama ◽  
K. Iga
Keyword(s):  
Threshold Current ◽  
Surface Emitting Laser ◽  
Inp Surface

scholarly journals Design and Fabrication of the Reliable GaN Based Vertical-Cavity Surface-Emitting Laser via Tunnel Junction

Crystals ◽  
2019 ◽  
Vol 9 (4) ◽  
pp. 187 ◽  
Author(s):  
Chih-Chiang Shen ◽  
Yun-Ting Lu ◽  
Yen-Wei Yeh ◽  
Cheng-Yuan Chen ◽  
Yu-Tzu Chen ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Indium Tin Oxide ◽  
Optical Loss ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Cavity Surface ◽  
Output Performance ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Vertical Cavity

In this study, we theoretically designed and experimentally fabricated an InGaN vertical-cavity surface-emitting laser (VCSEL) with a tunnel junction (TJ) structure. From numerical simulation results, the optical loss of the device can be reduced by a TJ structure. Additionally, the leakage current of the VCSEL with TJ structure was much smaller than that of the VCSEL with an Indium-Tin-Oxide (ITO) layer. We have been demonstrated that laser output performance is improved by using the TJ structure when compared to the typical VCSEL structure of the ITO layer. The output power obtained at 2.1 mW was enhanced by a factor of 3.5 by the successful reduction of threshold current density (Jth) from 12 to 8.5 kA/cm2, and the enlarged slope efficiency was due to less absorption in VCSEL with a TJ structure. Finally, the samples passed the high temperature (70 °C) and high operation current (1.5 × Jth) test for over 500 h.

Low-Threshold-Current and Single-Mode Surface-Emitting Laser Buried in Amorphous GaAs

1996 ◽  
Vol 35 (Part 1, No. 2B) ◽  
pp. 1378-1381 ◽  
Author(s):  
Hyo-Hoon Park ◽  
Byueng-Su Yoo ◽  
Hye Yong Chu ◽  
El-Hang Lee ◽  
Min Soo Park ◽  
...  
Keyword(s):  
Single Mode ◽  
Threshold Current ◽  
Surface Emitting Laser ◽  
Low Threshold

GaInAsP/InP surface-emitting laser diode

1986 ◽  
Vol 18 (6) ◽  
pp. 403-422 ◽  
Author(s):  
Kenichi Iga ◽  
Seiji Uchiyama
Keyword(s):  
Laser Diode ◽  
Surface Emitting Laser ◽  
Inp Surface

High Gain, Low Threshold Current GaInAsP Based Vcsels for Operation at 1.24UM

2002 ◽  
Vol 744 ◽  
Author(s):  
Zhuopeng Tan ◽  
Yixin Li ◽  
Aris Christou
Keyword(s):  
Resonant Cavity ◽  
Threshold Current ◽  
High Gain ◽  
Cavity Surface ◽  
Optimized Design ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Low Threshold ◽  
External Efficiency ◽  
Threshold Gain

ABSTRACTAn electrically pumped 1.24um GaxIn1-xAsyP1-y Vertical Cavity Surface Emitting Laser (VCSEL) has been designed and simulated. Threshold gain of 153cm-1 and threshold current of 1.00mA was obtained. The external efficiency predicted is 0.31. Also the optimized design of VCSEL structure is presented in this article. GaInAsP and AlInAs constitute the Distributed Bragg Reflectors (DBRs) multilayer stack. Reflectivity of the top DBRs is 0.97 and reflectivity of the bottom DBRs is 0.9978 and is shown to provide a good resonant cavity and sufficient lasing intensity. Compared with other reported structures, the present VCSEL has a lower threshold current and higher threshold gain.

Single-transverse mode, low threshold current vertical-cavity surface-emitting laser

1993 ◽  
Vol 40 (11) ◽  
pp. 2116-2117 ◽  
Author(s):  
Y.A. Wu ◽  
C.J. Chang-Hasnain ◽  
G.S. Li ◽  
R. Nabiev ◽  
C. Caneau ◽  
...  
Keyword(s):  
Transverse Mode ◽  
Threshold Current ◽  
Cavity Surface ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Low Threshold ◽  
Vertical Cavity

Record Low Threshold Current in Microcavity Surface-Emitting Laser

1993 ◽  
Vol 32 (Part 2, No. 10B) ◽  
pp. L1533-L1534 ◽  
Author(s):  
Takahiro Numai ◽  
Takeshi Kawakami ◽  
Takashi Yoshikawa ◽  
Mitsunori Sugimoto ◽  
Yoshimasa Sugimoto ◽  
...  
Keyword(s):  
Threshold Current ◽  
Surface Emitting Laser ◽  
Low Threshold

Reduced-threshold-current vertical cavity surface-emitting laser

1995 ◽  
Vol 9 (1) ◽  
pp. 10-12
Author(s):  
M. A. Matin ◽  
T. M. Benson ◽  
J. W. Orton ◽  
D. E. Lacklison ◽  
A. F. Jezierski ◽  
...  
Keyword(s):  
Threshold Current ◽  
Cavity Surface ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Vertical Cavity
Sign in / Sign up

Export Citation Format

Share Document