scholarly journals Atomic layer deposition of silicon-based dielectrics for semiconductor manufacturing: Current status and future outlook

2019 ◽  
Vol 37 (6) ◽  
pp. 060904 ◽  
Author(s):  
Rafaiel A. Ovanesyan ◽  
Ekaterina A. Filatova ◽  
Simon D. Elliott ◽  
Dennis M. Hausmann ◽  
David C. Smith ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Semiconductor Manufacturing ◽  
Atomic Layer ◽  
Current Status ◽  
Future Outlook ◽  
Layer Deposition ◽  
Silicon Based

Atomic Layer Deposition of Dielectrics on Ge and III–V Materials for Ultrahigh Performance Transistors

MRS Bulletin ◽  
2009 ◽  
Vol 34 (7) ◽  
pp. 493-503 ◽  
Author(s):  
Robert M. Wallace ◽  
Paul C. McIntyre ◽  
Jiyoung Kim ◽  
Yoshio Nishi
Keyword(s):  
Atomic Layer Deposition ◽  
Integrated Circuits ◽  
Large Scale ◽  
Gate Dielectrics ◽  
Atomic Layer ◽  
Current Status ◽  
Scale Production ◽  
Transistor Channel ◽  
Layer Deposition ◽  
Field Effect Devices

AbstractThe prospect of utilizing alternative transistor channel materials for ultrahigh performance transistors will require suitable gate dielectrics for surface-channel field-effect devices. With the utilization of deposited gate dielectrics in large-scale production for Si-based integrated circuits by atomic layer deposition, extending this technology to channel materials that exhibit high bulk mobility behavior is of interest. A review of the current status for atomic layer deposited high-κ dielectrics on Ge and III–V channel materials is presented.

Atomic layer deposition of highly doped Er:Al2O3 and Tm:Al2O3 for silicon-based waveguide amplifiers (Conference Presentation)

2016 ◽  
Author(s):  
John Roenn ◽  
Lasse Karvonen ◽  
Alexander Pyymäki-Perros ◽  
Nasser N. Peyghambarian ◽  
Harri Lipsanen ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Waveguide Amplifiers ◽  
Layer Deposition ◽  
Silicon Based

scholarly journals Electric Field Tuning of Magnetism in Fe3O4/Pt/PZN-PT Heterostructures Prepared by Atomic Layer Deposition

2021 ◽  
Author(s):  
Le Zhang ◽  
Weixiao Hou ◽  
Tao Li ◽  
Jian He ◽  
Jiliang Mu ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Electric Field ◽  
Magnetic Anisotropy ◽  
Atomic Layer ◽  
Resonance Spectroscopy ◽  
Layer Deposition ◽  
Out Of Plane ◽  
Lead Zinc ◽  
Multiferroic Heterostructures ◽  
Silicon Based

Abstract Tuning of magnetic properties by electric field (E-field) has received extensive attention because it is compact, fast, and energy efficient. Here, multiferroic heterostructures of Fe3O4/Pt/PZN-PT (011) (lead zinc niobate-lead titanate single piezoelectric substrate) were in-situ fabricated by atomic layer deposition (ALD) using C10H10Fe and O2 as precursors at a low temperature (400oC) without a subsequent annealing process in H2 atmosphere, which is beneficial in combining with traditional silicon-based semiconductor technology. The E-field dependence of the magnetic anisotropy was studied systematically by ferromagnetic resonance spectroscopy with the larger tunable in-plane magnetic anisotropy of 152 Oe and 318 Oe obtained along the [100] and [0-11] axes, corresponding to the largest magnetoelectric coupling coefficient of 31.8 Oe.cm/kV. Also, the tunable out-of-plane magnetic anisotropy of 35 Oe was obtained along the [011] axis. The outstanding E-field tuning magnetism in the Fe3O4/Pt/PZN-PT heterostructures offers significant possibilities for novel multiferroic devices.

scholarly journals Blue Electroluminescent Al2O3/Tm2O3 Nanolaminate Films Fabricated by Atomic Layer Deposition on Silicon

Nanomaterials ◽  
2019 ◽  
Vol 9 (3) ◽  
pp. 413 ◽  
Author(s):  
Yao Liu ◽  
Zhongtao Ouyang ◽  
Li Yang ◽  
Yang Yang ◽  
Jiaming Sun
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Oxide Semiconductor ◽  
Impact Excitation ◽  
Precise Control ◽  
Decay Lifetime ◽  
Layer Deposition ◽  
Sublayer Thickness ◽  
Silicon Based ◽  
The Impact

Realization of a silicon-based light source is of significant importance for the future development of optoelectronics and telecommunications. Here, nanolaminate Al2O3/Tm2O3 films are fabricated on silicon utilizing atomic layer deposition, and intense blue electroluminescence (EL) from Tm3+ ions is achieved in the metal-oxide-semiconductor structured luminescent devices based on them. Precise control of the nanolaminates enables the study on the influence of the Tm dopant layers and the distance between every Tm2O3 layer on the EL performance. The 456 nm blue EL from Tm3+ ions shows a maximum power density of 0.15 mW/cm2. The EL intensities and decay lifetime decrease with excessive Tm dopant cycles due to the reduction of optically active Tm3+ ions. Cross-relaxation among adjacent Tm2O3 dopant layers reduces the blue EL intensity and the decay lifetime, which strongly depends on the Al2O3 sublayer thickness, with a critical value of ~3 nm. The EL is attributed to the impact excitation of the Tm3+ ions by hot electrons in Al2O3 matrix via Poole–Frenkel mechanism.

Growth of the Initial Atomic Layers of Ta-N Films During Atomic Layer Deposition on Silicon-Based Substrates

2011 ◽  
Vol 17 (1-3) ◽  
pp. 37-44 ◽  
Author(s):  
Steffen Strehle ◽  
Daniela Schmidt ◽  
Matthias Albert ◽  
Johann W. Bartha
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Silicon Based

scholarly journals Conformality in atomic layer deposition: Current status overview of analysis and modelling

2019 ◽  
Vol 6 (2) ◽  
pp. 021302 ◽  
Author(s):  
Véronique Cremers ◽  
Riikka L. Puurunen ◽  
Jolien Dendooven
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Current Status ◽  
Layer Deposition

Application of Atomic Layer Deposition in Dye-Sensitized Photoelectrosynthesis Cells

2021 ◽  
Vol 3 (1) ◽  
pp. 59-71
Author(s):  
Degao Wang ◽  
Qing Huang ◽  
Weiqun Shi ◽  
Wei You ◽  
Thomas J. Meyer
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Dye Sensitized ◽  
Layer Deposition
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