Challenges in atomic layer deposition of carbon-containing silicon-based dielectrics

2017 ◽  
Vol 35 (2) ◽  
pp. 021506 ◽  
Author(s):  
Rafaiel A. Ovanesyan ◽  
Dennis M. Hausmann ◽  
Sumit Agarwal
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Silicon Based

Atomic layer deposition of highly doped Er:Al2O3 and Tm:Al2O3 for silicon-based waveguide amplifiers (Conference Presentation)

2016 ◽  
Author(s):  
John Roenn ◽  
Lasse Karvonen ◽  
Alexander Pyymäki-Perros ◽  
Nasser N. Peyghambarian ◽  
Harri Lipsanen ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Waveguide Amplifiers ◽  
Layer Deposition ◽  
Silicon Based

scholarly journals Electric Field Tuning of Magnetism in Fe3O4/Pt/PZN-PT Heterostructures Prepared by Atomic Layer Deposition

2021 ◽  
Author(s):  
Le Zhang ◽  
Weixiao Hou ◽  
Tao Li ◽  
Jian He ◽  
Jiliang Mu ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Electric Field ◽  
Magnetic Anisotropy ◽  
Atomic Layer ◽  
Resonance Spectroscopy ◽  
Layer Deposition ◽  
Out Of Plane ◽  
Lead Zinc ◽  
Multiferroic Heterostructures ◽  
Silicon Based

Abstract Tuning of magnetic properties by electric field (E-field) has received extensive attention because it is compact, fast, and energy efficient. Here, multiferroic heterostructures of Fe3O4/Pt/PZN-PT (011) (lead zinc niobate-lead titanate single piezoelectric substrate) were in-situ fabricated by atomic layer deposition (ALD) using C10H10Fe and O2 as precursors at a low temperature (400oC) without a subsequent annealing process in H2 atmosphere, which is beneficial in combining with traditional silicon-based semiconductor technology. The E-field dependence of the magnetic anisotropy was studied systematically by ferromagnetic resonance spectroscopy with the larger tunable in-plane magnetic anisotropy of 152 Oe and 318 Oe obtained along the [100] and [0-11] axes, corresponding to the largest magnetoelectric coupling coefficient of 31.8 Oe.cm/kV. Also, the tunable out-of-plane magnetic anisotropy of 35 Oe was obtained along the [011] axis. The outstanding E-field tuning magnetism in the Fe3O4/Pt/PZN-PT heterostructures offers significant possibilities for novel multiferroic devices.

scholarly journals Blue Electroluminescent Al2O3/Tm2O3 Nanolaminate Films Fabricated by Atomic Layer Deposition on Silicon

Nanomaterials ◽  
2019 ◽  
Vol 9 (3) ◽  
pp. 413 ◽  
Author(s):  
Yao Liu ◽  
Zhongtao Ouyang ◽  
Li Yang ◽  
Yang Yang ◽  
Jiaming Sun
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Oxide Semiconductor ◽  
Impact Excitation ◽  
Precise Control ◽  
Decay Lifetime ◽  
Layer Deposition ◽  
Sublayer Thickness ◽  
Silicon Based ◽  
The Impact

Realization of a silicon-based light source is of significant importance for the future development of optoelectronics and telecommunications. Here, nanolaminate Al2O3/Tm2O3 films are fabricated on silicon utilizing atomic layer deposition, and intense blue electroluminescence (EL) from Tm3+ ions is achieved in the metal-oxide-semiconductor structured luminescent devices based on them. Precise control of the nanolaminates enables the study on the influence of the Tm dopant layers and the distance between every Tm2O3 layer on the EL performance. The 456 nm blue EL from Tm3+ ions shows a maximum power density of 0.15 mW/cm2. The EL intensities and decay lifetime decrease with excessive Tm dopant cycles due to the reduction of optically active Tm3+ ions. Cross-relaxation among adjacent Tm2O3 dopant layers reduces the blue EL intensity and the decay lifetime, which strongly depends on the Al2O3 sublayer thickness, with a critical value of ~3 nm. The EL is attributed to the impact excitation of the Tm3+ ions by hot electrons in Al2O3 matrix via Poole–Frenkel mechanism.

Growth of the Initial Atomic Layers of Ta-N Films During Atomic Layer Deposition on Silicon-Based Substrates

2011 ◽  
Vol 17 (1-3) ◽  
pp. 37-44 ◽  
Author(s):  
Steffen Strehle ◽  
Daniela Schmidt ◽  
Matthias Albert ◽  
Johann W. Bartha
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Silicon Based

scholarly journals Atomic layer deposition of silicon-based dielectrics for semiconductor manufacturing: Current status and future outlook

2019 ◽  
Vol 37 (6) ◽  
pp. 060904 ◽  
Author(s):  
Rafaiel A. Ovanesyan ◽  
Ekaterina A. Filatova ◽  
Simon D. Elliott ◽  
Dennis M. Hausmann ◽  
David C. Smith ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Semiconductor Manufacturing ◽  
Atomic Layer ◽  
Current Status ◽  
Future Outlook ◽  
Layer Deposition ◽  
Silicon Based

Application of Atomic Layer Deposition in Dye-Sensitized Photoelectrosynthesis Cells

2021 ◽  
Vol 3 (1) ◽  
pp. 59-71
Author(s):  
Degao Wang ◽  
Qing Huang ◽  
Weiqun Shi ◽  
Wei You ◽  
Thomas J. Meyer
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Dye Sensitized ◽  
Layer Deposition

Workfunction of Al-Doped ZnO Films Deposited by Atomic Layer Deposition

2018 ◽  
Author(s):  
Peter George Gordon ◽  
Goran Bacic ◽  
Gregory P. Lopinski ◽  
Sean Thomas Barry
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Atomic Ratio ◽  
Aluminum Concentration ◽  
Zno Films ◽  
Transparent Conductor ◽  
Kelvin Probe ◽  
Layer Deposition ◽  
Earth Abundant ◽  
Doped Zno

Al-doped ZnO (AZO) is a promising earth-abundant alternative to Sn-doped In<sub>2</sub>O<sub>3</sub> (ITO) as an n-type transparent conductor for electronic and photovoltaic devices; AZO is also more straightforward to deposit by atomic layer deposition (ALD). The workfunction of this material is particularly important for the design of optoelectronic devices. We have deposited AZO films with resistivities as low as 1.1 x 10<sup>-3</sup> Ωcm by ALD using the industry-standard precursors trimethylaluminum (TMA), diethylzinc (DEZ), and water at 200<sup>◦</sup>C. These films were transparent and their elemental compositions showed reasonable agreement with the pulse program ratios. The workfunction of these films was measured using a scanning Kelvin Probe (sKP) to investigate the role of aluminum concentration. In addition, the workfunction of AZO films prepared by two different ALD recipes were compared: a “surface” recipe wherein the TMA was pulsed at the top of each repeating AZO stack, and a interlamellar recipe where the TMA pulse was introduced halfway through the stack. As aluminum doping increases, the surface recipe produces films with a consistently higher workfunction as compared to the interlamellar recipe. The resistivity of the surface recipe films show a minimum at a 1:16 Al:Zn atomic ratio and using an interlamellar recipe, minimum resistivity was seen at 1:19. The film thicknesses were characterized by ellipsometry, chemical composition by EDX, and resistivity by four-point probe.<br>

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