scholarly journals Conformality in atomic layer deposition: Current status overview of analysis and modelling

2019 ◽  
Vol 6 (2) ◽  
pp. 021302 ◽  
Author(s):  
Véronique Cremers ◽  
Riikka L. Puurunen ◽  
Jolien Dendooven
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Current Status ◽  
Layer Deposition

Atomic Layer Deposition of Dielectrics on Ge and III–V Materials for Ultrahigh Performance Transistors

MRS Bulletin ◽  
2009 ◽  
Vol 34 (7) ◽  
pp. 493-503 ◽  
Author(s):  
Robert M. Wallace ◽  
Paul C. McIntyre ◽  
Jiyoung Kim ◽  
Yoshio Nishi
Keyword(s):  
Atomic Layer Deposition ◽  
Integrated Circuits ◽  
Large Scale ◽  
Gate Dielectrics ◽  
Atomic Layer ◽  
Current Status ◽  
Scale Production ◽  
Transistor Channel ◽  
Layer Deposition ◽  
Field Effect Devices

AbstractThe prospect of utilizing alternative transistor channel materials for ultrahigh performance transistors will require suitable gate dielectrics for surface-channel field-effect devices. With the utilization of deposited gate dielectrics in large-scale production for Si-based integrated circuits by atomic layer deposition, extending this technology to channel materials that exhibit high bulk mobility behavior is of interest. A review of the current status for atomic layer deposited high-κ dielectrics on Ge and III–V channel materials is presented.

scholarly journals Atomic layer deposition of silicon-based dielectrics for semiconductor manufacturing: Current status and future outlook

2019 ◽  
Vol 37 (6) ◽  
pp. 060904 ◽  
Author(s):  
Rafaiel A. Ovanesyan ◽  
Ekaterina A. Filatova ◽  
Simon D. Elliott ◽  
Dennis M. Hausmann ◽  
David C. Smith ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Semiconductor Manufacturing ◽  
Atomic Layer ◽  
Current Status ◽  
Future Outlook ◽  
Layer Deposition ◽  
Silicon Based

Application of Atomic Layer Deposition in Dye-Sensitized Photoelectrosynthesis Cells

2021 ◽  
Vol 3 (1) ◽  
pp. 59-71
Author(s):  
Degao Wang ◽  
Qing Huang ◽  
Weiqun Shi ◽  
Wei You ◽  
Thomas J. Meyer
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Dye Sensitized ◽  
Layer Deposition

Workfunction of Al-Doped ZnO Films Deposited by Atomic Layer Deposition

2018 ◽  
Author(s):  
Peter George Gordon ◽  
Goran Bacic ◽  
Gregory P. Lopinski ◽  
Sean Thomas Barry
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Atomic Ratio ◽  
Aluminum Concentration ◽  
Zno Films ◽  
Transparent Conductor ◽  
Kelvin Probe ◽  
Layer Deposition ◽  
Earth Abundant ◽  
Doped Zno

Al-doped ZnO (AZO) is a promising earth-abundant alternative to Sn-doped In<sub>2</sub>O<sub>3</sub> (ITO) as an n-type transparent conductor for electronic and photovoltaic devices; AZO is also more straightforward to deposit by atomic layer deposition (ALD). The workfunction of this material is particularly important for the design of optoelectronic devices. We have deposited AZO films with resistivities as low as 1.1 x 10<sup>-3</sup> Ωcm by ALD using the industry-standard precursors trimethylaluminum (TMA), diethylzinc (DEZ), and water at 200<sup>◦</sup>C. These films were transparent and their elemental compositions showed reasonable agreement with the pulse program ratios. The workfunction of these films was measured using a scanning Kelvin Probe (sKP) to investigate the role of aluminum concentration. In addition, the workfunction of AZO films prepared by two different ALD recipes were compared: a “surface” recipe wherein the TMA was pulsed at the top of each repeating AZO stack, and a interlamellar recipe where the TMA pulse was introduced halfway through the stack. As aluminum doping increases, the surface recipe produces films with a consistently higher workfunction as compared to the interlamellar recipe. The resistivity of the surface recipe films show a minimum at a 1:16 Al:Zn atomic ratio and using an interlamellar recipe, minimum resistivity was seen at 1:19. The film thicknesses were characterized by ellipsometry, chemical composition by EDX, and resistivity by four-point probe.<br>

One-Dimensional TiO2@GaON Core-Shell Nanowires with Controlled Shell Thickness from Atomic Layer Deposition for Stable and Efficient Photoelectrochemical Water Splitting

2019 ◽  
Author(s):  
Jiajia Tao ◽  
Hong-Ping Ma ◽  
Kaiping Yuan ◽  
Yang Gu ◽  
Jianwei Lian ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Band Gap ◽  
Water Splitting ◽  
Atomic Layer ◽  
Photoelectrochemical Water Splitting ◽  
Core Shell ◽  
Photoelectrochemical Performance ◽  
Highly Efficient ◽  
Layer Deposition ◽  
Shell Nanowires

<div>As a promising oxygen evolution reaction semiconductor, TiO2 has been extensively investigated for solar photoelectrochemical water splitting. Here, a highly efficient and stable strategy for rationally preparing GaON cocatalysts on TiO2 by atomic layer deposition is demonstrated, which we show significantly enhances the</div><div>photoelectrochemical performance compared to TiO2-based photoanodes. For TiO2@20 nm-GaON core-shell nanowires a photocurrent density up to 1.10 mA cm-2 (1.23 V vs RHE) under AM 1.5 G irradiation (100 mW cm-2) has been achieved, which is 14 times higher than that of TiO2 NWs. Furthermore, the oxygen vacancy formation on GaON as well as the band gap matching with TiO2 not only provides more active sites for water oxidation but also enhances light absorption to promote interfacial charge separation and migration. Density functional theory studies of model systems of GaON-modified TiO2 confirm the band gap reduction, high reducibility and ability to activate water. The highly efficient and stable systems of TiO2@GaON core-shell nanowires provide a deeper understanding and universal strategy for enhancing photoelectrochemical performance of photoanodes now available. </div>

Interface Studies of Metal Oxides Grown Directly on Hybrid Perovskite by Atomic Layer Deposition

2019 ◽  
Author(s):  
Claire Burgess ◽  
Farzad Mardekatani Asl ◽  
Valerio Zardetto ◽  
Herbert Lifka ◽  
Sjoerd Veenstra ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Metal Oxides ◽  
Atomic Layer ◽  
Hybrid Perovskite ◽  
Layer Deposition
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