scholarly journals Rutherford Backscattering Spectrometry Analysis and Structural Properties of ZnxPb1-xS Thin Films Deposited by Chemical Spray Pyrolysis

2015 ◽  
Vol 2015 ◽  
pp. 1-8 ◽  
Author(s):  
Abiodun E. Adeoye ◽  
Emmanuel Ajenifuja ◽  
Bidini A. Taleatu ◽  
A. Y. Fasasi

Zinc lead sulphide ternary thin films were prepared by chemical spray pyrolysis on soda lime glass substrates using zinc acetate, lead acetate, and thiourea sources precursor. The films were characterized using Rutherford backscattering (RBS) spectrometry, energy dispersive X-ray (EDX) spectroscopy, scanning electron microscopy (SEM), and X-ray diffractometry (XRD). RBS studies revealed variation in thickness and stoichiometry of the films with respect to compositional substitution between Zn and Pb, thereby giving effective composition ZnxPb1-xS, where x=0, 0.035, 0.069, 0.109, 0.176, and 0.217. Film thickness obtained by length conversion ranged from 81.02 nm to 90.03 nm. Microstructural analyses also indicated that the growth and particle distribution of the films were uniform across substrate’s surface. Diffraction studies showed that the films possess FCC crystalline structure. Crystallite size reduced from 14.28 to 9.8 nm with increase in Zn2+ in the ZnxPb1-xS samples.

2009 ◽  
Vol 67 ◽  
pp. 103-108 ◽  
Author(s):  
C.M. Mahajan ◽  
A.G. Godbole ◽  
S.P. Gumfekar ◽  
S.H. Sonawane ◽  
M.G. Takwale

Nanocrystalline undoped and Al doped ZnO thin films were synthesized by the chemical spray pyrolysis of Zinc acetate and Aluminium chloride solution. The optoelectronic properties of undoped and Al:ZnO films were investigated. The XRD patterns of films were preferably oriented along c-axis [0 0 2] plane with the hexagonal wurtzite structure. The Al-doping caused no additional X-ray diffraction peaks when compared with XRD of undoped film, indicating Al2O3 content was below the detection limit. The crystallite size of undoped and Al doped film was 48 nm and 51nm respectively, as measured from X-ray diffractogram. The films are of high optical transmittance (≥ 90%). The resistivity of the film was found to decrease because of Al doping. The dark resistivity measurement for Al:ZnO film was of the order of 10-3 Ω-1cm-1. The band gap energy of the film was found to vary from 3.25 to 3.32eV indicating the Moss Burstein shift. Al:ZnO films can be used as transparent conducting oxide layers for photovoltaic applications.


2021 ◽  
Vol 49 (1) ◽  
Author(s):  
Reem S. Khaleel ◽  
◽  
Mustafa Sh. Hashim ◽  
Samer Gh. Majeed ◽  
◽  
...  

The deposition of metal oxides powder faces several problems, including poor adhesion to the bases deposited on them, the presence of many cracks, poor thickness control, and other disadvantages. The current study gives a new and simple idea to deposit thin films using two ZnO powders with nano and microparticle sizes on glass substrates. This was done by transforming the powders to Zinc acetate and then using chemical spray pyrolysis to deposit ZnO thin films. Scanning electron microscope (SEM) images showed that the prepared film from the nanopowder (ZnONano) lost the independence of powder’s nanoparticles and became a homogeneous film with nano projections. But the deposited one from the micro powder (ZnOMicro) had both nanorods and nanoplates. The different shapes and sizes of ZnO particles in ZnOMicro powder were disappeared after the Spray process. The two deposited films were homogeneous, crack-free and there were controllable thicknesses during the deposition. X-ray spectroscopy (EDS) was used to measure weights and atomic percentages of elements for the deposited films. The structures of the deposited films were approximately identical as the X-ray diffraction (XRD) technique showed. The optical properties of these two films were studied and their parameters were measured and calculated.


2012 ◽  
Vol 626 ◽  
pp. 672-676
Author(s):  
Boon Hoong Ong ◽  
Heng Choy Lee ◽  
Sharifah Bee Abdul Hamid

Nanostructured SnO2 thin films were deposited on glass substrate using chemical spray pyrolysis technique. Three influent synthesis parameters, namely (i) the precursor concentration (0.2M and 0.5M), (ii) the substrate temperature (250°C and 350°C) and (iii) doping with zinc (Zn) were investigated in term of their effects on the morphology and structure of SnO2 thin films. These films were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM) and energy dispersive X-ray spectrometry (EDX) techniques. The grain size of the films was observed to increase as the concentration of the precursors is increased. Substrate temperature is proved to be crucial in determining the crystallinity of the films as the films are reported to grow at temperature above 270°C. Besides, the addition of dopant was found to reduce the grain size of the film.


2018 ◽  
Vol 4 (5) ◽  
pp. 542-545 ◽  
Author(s):  
R. Shabu ◽  
A. Moses Ezhil Raj

As major attention has been paid to transition metal oxide semiconductor suitable for solar cell, photo detector and gas sensor, present study embark on the structural, optical and electrical characterization of Ag doped CuO thin films prepared using chemical spray pyrolysis technique at the constant substrate temperature of 350 �C. For Ag doping, various concentrations of silver acetate (0.5-3.0 wt.%) was used in the sprayed precursor solution. Confirmed monoclinic lattice shows the tenorite phase formation of CuO in the pure and Ag doped films. The optical band gap of the films was in the range of 2.4 -3.4 eV. A minimum resistivity of 0.0017x103 ohmcm was achieved in the 0.5 wt.% Ag doped film, and its optical band gap was 2.74 eV.


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