Surface reaction kinetics of room temperature atomic layer deposition of ZnO observed by in situ IR absorption spectroscopy

2019 ◽  
Vol 37 (2) ◽  
pp. 020922
Author(s):  
Kazuki Yoshida ◽  
Kentaro Saito ◽  
Masanori Miura ◽  
Kensaku Kanomata ◽  
Fumihiko Hirose
Keyword(s):  
Atomic Layer Deposition ◽  
Room Temperature ◽  
Surface Reaction ◽  
Atomic Layer ◽  
Ir Absorption ◽  
Layer Deposition ◽  
In Situ Ir ◽  
Surface Reaction Kinetics ◽  
Kinetics Of

Room Temperature Atomic Layer Deposition of Gallium Oxide Investigated by IR Absorption Spectroscopy

2015 ◽  
Vol E98.C (5) ◽  
pp. 382-389 ◽  
Author(s):  
P. Pungboon PANSILA ◽  
Kensaku KANOMATA ◽  
Bashir AHMMAD ◽  
Shigeru KUBOTA ◽  
Fumihiko HIROSE
Keyword(s):  
Atomic Layer Deposition ◽  
Absorption Spectroscopy ◽  
Gallium Oxide ◽  
Room Temperature ◽  
Atomic Layer ◽  
Ir Absorption ◽  
Layer Deposition

scholarly journals FTIR study of copper agglomeration during atomic layer deposition of copper

2009 ◽  
Vol 1155 ◽  
Author(s):  
Min Dai ◽  
Jinhee Kwon ◽  
Yves J. Chabal ◽  
Mathew D. Halls ◽  
Roy G. Gordon
Keyword(s):  
Fourier Transform ◽  
Atomic Layer Deposition ◽  
Molecular Hydrogen ◽  
Surface Reaction ◽  
Metallic Copper ◽  
Atomic Layer ◽  
Initial Surface ◽  
Phonon Modes ◽  
Layer Deposition

AbstractThe growth of of metallic copper by atomic layer deposition (ALD) using copper(I) di-sec-butylacetamidinate ([Cu(sBu-amd)]2) and molecular hydrogen (H2) on SiO2/Si surfaces has been studied. The mechanisms for the initial surface reaction and chemical bonding evolutions with each ALD cycle are inferred from in situ Fourier transform infrared spectroscopy (FTIR) data. Spectroscopic evidence for Cu agglomeration on SiO2 is presented involving the intensity variations of the SiO2 LO/TO phonon modes after chemical reaction with the Cu precursor and after the H2 precursor cycle. These intensity variations are observed over the first 20 ALD cycles at 185°C.

scholarly journals HfS2 thin films deposited at room temperature by an emerging technique, solution atomic layer deposition

2021 ◽  
Author(s):  
Yuanyuan Cao ◽  
Sha Zhu ◽  
Julien Bachmann
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Room Temperature ◽  
Atomic Layer ◽  
Two Dimensional ◽  
Molecular Precursors ◽  
Layer Deposition

The two-dimensional material and semiconducting dichalcogenide hafnium disulfide is deposited at room temperature by atomic layer deposition from molecular precursors dissolved in hexane.

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