Achieving ultrahigh etching selectivity of SiO2 over Si3N4 and Si in atomic layer etching by exploiting chemistry of complex hydrofluorocarbon precursors

2018 ◽  
Vol 36 (4) ◽  
pp. 040601 ◽  
Author(s):  
Kang-Yi Lin ◽  
Chen Li ◽  
Sebastian Engelmann ◽  
Robert L. Bruce ◽  
Eric A. Joseph ◽  
...  
Keyword(s):  
Atomic Layer ◽  
Etching Selectivity ◽  
Atomic Layer Etching

scholarly journals Fluorocarbon based atomic layer etching of Si3N4 and etching selectivity of SiO2 over Si3N4

2016 ◽  
Vol 34 (4) ◽  
pp. 041307 ◽  
Author(s):  
Chen Li ◽  
Dominik Metzler ◽  
Chiukin Steven Lai ◽  
Eric A. Hudson ◽  
Gottlieb S. Oehrlein
Keyword(s):  
Atomic Layer ◽  
Etching Selectivity ◽  
Atomic Layer Etching

scholarly journals Investigation on Ge0.8Si0.2-Selective Atomic Layer Wet-Etching of Ge for Vertical Gate-All-Around Nanodevice

Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1408
Author(s):  
Lu Xie ◽  
Huilong Zhu ◽  
Yongkui Zhang ◽  
Xuezheng Ai ◽  
Junjie Li ◽  
...  
Keyword(s):  
Crystal Orientation ◽  
Field Effect ◽  
Etch Rate ◽  
Field Effect Transistors ◽  
Atomic Layer ◽  
Wet Etching ◽  
Isotropic Etching ◽  
Etching Selectivity ◽  
Oxide Removal ◽  
Atomic Layer Etching

For the formation of nano-scale Ge channels in vertical Gate-all-around field-effect transistors (vGAAFETs), the selective isotropic etching of Ge selective to Ge0.8Si0.2 was considered. In this work, a dual-selective atomic layer etching (ALE), including Ge0.8Si0.2-selective etching of Ge and crystal-orientation selectivity of Ge oxidation, has been developed to control the etch rate and the size of the Ge nanowires. The ALE of Ge in p+-Ge0.8Si0.2/Ge stacks with 70% HNO3 as oxidizer and deionized (DI) water as oxide-removal was investigated in detail. The saturated relative etched amount per cycle (REPC) and selectivity at different HNO3 temperatures between Ge and p+-Ge0.8Si0.2 were obtained. In p+-Ge0.8Si0.2/Ge stacks with (110) sidewalls, the REPC of Ge was 3.1 nm and the saturated etching selectivity was 6.5 at HNO3 temperature of 20 °C. The etch rate and the selectivity were affected by HNO3 temperatures. As the HNO3 temperature decreased to 10 °C, the REPC of Ge was decreased to 2 nm and the selectivity remained at about 7.4. Finally, the application of ALE in the formation of Ge nanowires in vGAAFETs was demonstrated where the preliminary Id–Vds output characteristic curves of Ge vGAAFET were provided.

Damaged silicon contact layer removal using atomic layer etching for deep-nanoscale semiconductor devices

2013 ◽  
Vol 31 (6) ◽  
pp. 061310 ◽  
Author(s):  
Jong Kyu Kim ◽  
Sung Il Cho ◽  
Sung Ho Lee ◽  
Chan Kyu Kim ◽  
Kyung Suk Min ◽  
...  
Keyword(s):  
Semiconductor Devices ◽  
Atomic Layer ◽  
Contact Layer ◽  
Layer Removal ◽  
Atomic Layer Etching

Understanding time-resolved processes in atomic-layer etching of ultra-thin Al2O3 film using BCl3 and Ar neutral beam

2014 ◽  
Vol 105 (9) ◽  
pp. 093104 ◽  
Author(s):  
Young I. Jhon ◽  
Kyung S. Min ◽  
G. Y. Yeom ◽  
Young Min Jhon
Keyword(s):  
Atomic Layer ◽  
Neutral Beam ◽  
Al2o3 Film ◽  
Time Resolved ◽  
Atomic Layer Etching

(Invited) Volatile Products during Thermal Atomic Layer Etching of Metal Oxides and Elemental Metals

2021 ◽  
Vol MA2021-01 (21) ◽  
pp. 844-844
Author(s):  
Ann Lii-Rosales ◽  
Virginia Johnson ◽  
Sandeep Sharma ◽  
Andrew S Cavanagh ◽  
Steven M George
Keyword(s):  
Metal Oxides ◽  
Atomic Layer ◽  
Volatile Products ◽  
Atomic Layer Etching

Prediction and Validation of the Process Window for Atomic Layer Etching: HF Exposure on TiO2

2021 ◽  
Author(s):  
Suresh Kondati Natarajan ◽  
Austin M. Cano ◽  
Jonathan L. Partridge ◽  
Steven M. George ◽  
Simon D. Elliott
Keyword(s):  
Atomic Layer ◽  
Process Window ◽  
Atomic Layer Etching

scholarly journals Predicting synergy in atomic layer etching

2017 ◽  
Vol 35 (5) ◽  
pp. 05C302 ◽  
Author(s):  
Keren J. Kanarik ◽  
Samantha Tan ◽  
Wenbing Yang ◽  
Taeseung Kim ◽  
Thorsten Lill ◽  
...  
Keyword(s):  
Atomic Layer ◽  
Atomic Layer Etching

Thermal Atomic Layer Etching of Silicon Using O2, HF, and Al(CH3)3 as the Reactants

2018 ◽  
Vol 30 (23) ◽  
pp. 8465-8475 ◽  
Author(s):  
Aziz I. Abdulagatov ◽  
Steven M. George
Keyword(s):  
Atomic Layer ◽  
Atomic Layer Etching
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