Crystalline defect formation on aluminum bond pads during CMOS wafer storage and process strategies for defect elimination

2018 ◽  
Vol 36 (3) ◽  
pp. 031202 ◽  
Author(s):  
Santosh Kumar Pani ◽  
Royston Hugh Hogan ◽  
Madhavan Pandurangan ◽  
Ramesh Rao Nistala
Keyword(s):  
Defect Formation ◽  
Crystalline Defect ◽  
Bond Pads ◽  
Defect Elimination

Xenon ion irradiation of superconducting YBa2Cu3O7 thin films

1990 ◽  
Vol 48 (4) ◽  
pp. 92-93
Author(s):  
H. Watanabe ◽  
B. Kabius ◽  
B. Roas ◽  
K. Urban
Keyword(s):  
Defect Formation ◽  
Ion Irradiation ◽  
High Resolution Electron Microscopy ◽  
Structural Disorder ◽  
Flux Lines ◽  
Pinning Effect ◽  
Magnetic Flux Lines ◽  
Resolution Electron ◽  
Radiation Induced ◽  
Induced Defects

Recently it was reported that the critical current density(Jc) of YBa2Cu2O7, in the presence of magnetic field, is enhanced by ion irradiation. The enhancement is thought to be due to the pinning of the magnetic flux lines by radiation-induced defects or by structural disorder. The aim of the present study was to understand the fundamental mechanisms of the defect formation in association with the pinning effect in YBa2Cu3O7 by means of high-resolution electron microscopy(HRTEM).The YBa2Cu3O7 specimens were prepared by laser ablation in an insitu process. During deposition, a substrate temperature and oxygen atmosphere were kept at about 1073 K and 0.4 mbar, respectively. In this way high quality epitaxially films can be obtained with the caxis parallel to the <100 > SrTiO3 substrate normal. The specimens were irradiated at a temperature of 77 K with 173 MeV Xe ions up to a dose of 3.0 × 1016 m−2.

Defect formation in solids by decay of electronic excitations

1985 ◽  
Vol 147 (11) ◽  
pp. 523 ◽  
Author(s):  
M.I. Klinger ◽  
Ch.B. Lushchik ◽  
T.V. Mashovets ◽  
G.A. Kholodar' ◽  
M.K. Sheinkman ◽  
...  
Keyword(s):  
Defect Formation ◽  
Electronic Excitations

INFLUENCE OF THE LOCATION OF THE BASEBOARD JUMPER FOR FIRMWARE FOR DEFECT FORMATION IN CHAIN DRIVE SPROCKET FORGING

2020 ◽  
Author(s):  
I.A. Tserna ◽  
◽  
V.V. Bukhov ◽  
Keyword(s):  
Computer Simulation ◽  
Defect Formation ◽  
Chain Drive ◽  
Combine Harvester

The paper presents the results of computer simulation of the process of de-formationforged chain wheels, combine harvester; the influence of the placement of the jumper outline for firmware on the processes of defect formation in forging.

Solutocapillary-convection-driven macrovoid defect formation in polymeric membranes

2001 ◽  
Author(s):  
J. Zartman ◽  
V. Khare ◽  
A. Greenberg ◽  
M. Pekny ◽  
P. Todd ◽  
...  
Keyword(s):  
Defect Formation ◽  
Polymeric Membranes

Reasons for the formation of crack-like defects in 09Г2С heavy plate steel for tank steel structures

2020 ◽  
Vol 10 (5) ◽  
pp. 479-489
Author(s):  
Vitaly М. Goritsky ◽  
◽  
Georgy R. Shneyderov ◽  
Eugeny P. Studenov ◽  
Olga A. Zadubrovskaya ◽  
...  
Keyword(s):  
Impact Toughness ◽  
Defect Formation ◽  
Steel Structures ◽  
Controlled Rolling ◽  
Plate Steel ◽  
Heavy Plate ◽  
Oil Storage ◽  
Magnetic Inspection ◽  
Metal Microstructure

Determination of causes of crack-like defects in the heavy plate steel 09Г2С is a crucial task, the solution of which is aimed at improving the mechanical safety of oil storage steel vertical tanks. In order to determine the causes for the formation of a group of crack-like defects oriented towards rolling, revealed during grinding and magnetic inspection of the tank wall surface near the vertical weld, the analysis of the chemical composition and testing of the mechanical properties of heavy plate steel were carried out, including the determination of the anisotropy of impact toughness in the temperature range from +20 to –75 °С, analysis of metal microstructure in the area of defect formation on transversal sections and rolled surface. Impact bending tests of 09Г2С heavy plate steel after controlled rolling in longitudinal and transverse directions showed no anisotropy of impact toughness, as well as high purity of steel as for sulfur and titanium, which at higher content causes impact toughness anisotropy. The revealed features of metal microstructure near the defects made it possible to conclude that the crack-like defects were formed during the rolling of gas bubbles at the stage of preparing semi-finished rolled products for finishing rolling. One of the possible methods to prevent such defects from getting into finished rolled products is the use of automated systems of visual inspection of rolled products in the manufacturing process.

Micro-Raman Spectroscopy Evaluation of the Local Mechanical Stress in Shallow Trench Isolation CMOS Structures: Correlation with Defect Generation and Diode Leakage

1998 ◽  
Author(s):  
I. De Wolf ◽  
G. Groeseneken ◽  
H.E. Maes ◽  
M. Bolt ◽  
K. Barla ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Mechanical Stress ◽  
Defect Formation ◽  
Active Area ◽  
Wet Oxidation ◽  
Leakage Currents ◽  
Shallow Trench Isolation ◽  
Micro Raman Spectroscopy ◽  
Silicon Devices ◽  
Trench Isolation

Abstract It is shown, using micro-Raman spectroscopy, that Shallow Trench Isolation introduces high stresses in the active area of silicon devices when wet oxidation steps are used. These stresses result in defect formation in the active area, leading to high diode leakage currents. The stress levels are highest near the outer edges of line structures and at square structures. They also increase with decreasing active area dimensions.

Backside Application of Acoustic Micro Imaging (AMI) on Plastic Ball Grid Array (PBGA) and Plastic Quad Flat Pack (PQFP) Packages

2004 ◽  
Author(s):  
Luis A. Curiel ◽  
Andrew J. Komrowski ◽  
Daniel J.D. Sullivan
Keyword(s):  
Ball Grid Array ◽  
Acoustic Microscopy ◽  
Electronic Packages ◽  
Nondestructive Technique ◽  
Molding Compound ◽  
Microscopy Technique ◽  
Plastic Ball ◽  
Die Surface ◽  
Plastic Ball Grid Array ◽  
Bond Pads

Abstract Acoustic Micro Imaging (AMI) is an established nondestructive technique for evaluation of electronic packages. Non-destructive evaluation of electronic packages is often a critical first step in the Failure Analysis (FA) process of semiconductor devices [1]. The molding compound to die surface interface of the Plastic Ball Grid Array (PBGA) and Plastic Quad Flat Pack (PQFP) packages is an important interface to acquire for the FA process. Occasionally, with these packages, the standard acoustic microscopy technique fails to identify defects at the molding compound to die surface interface. The hard to identify defects are found at the edge of the die next to the bond pads or under the bonds wires. This paper will present a technique, Backside Acoustic Micro Imaging (BAMI) analysis, which can better resolve the molding compound to die surface interface at the die edge by sending the acoustic signal through the backside of the PBGA and PQFP packages.

Analysis of Al-over-Cu Bond Pad Hillock and Pit Hole Defects

2005 ◽  
Author(s):  
Daniel Cavasin ◽  
Abdullah Yassine
Keyword(s):  
Focused Ion Beam ◽  
Galvanic Corrosion ◽  
Process Analysis ◽  
Ion Beam ◽  
Metal Corrosion ◽  
Process Characterization ◽  
Nucleation Sites ◽  
Hole Defects ◽  
Bond Pads ◽  
Sawing Process

Abstract Bond pad metal corrosion was observed during assembly process characterization of a 0.13um Cu microprocessor device. The bond pad consisted of 12kÅ of Al-0.5%Cu atop 9kÅ of Cu, separated by a thin Ta diffusion barrier. The corrosion was first noted after the wafer dicing process. Analysis of the pad surface revealed pitting-type corrosion, consistent with published reports of classic galvanic cell reactions between Al2Cu (theta phase) particles and the surrounding Al pad metal. Analysis of the bond pads on samelot wafers which had not been diced showed higher-thanexpected incidence of hillock and pit hole defects on the Al surface. Statistically designed experiments were formulated to investigate the possibility that the observed pre-saw pad metal defects act as nucleation sites for galvanic corrosion during the sawing process. Analyses of the experimental samples were conducted using optical and scanning electron microscopy, along with focused ion beam deprocessing and energy dispersive X-ray. This paper explores the relationship between the presence of these pre-existing defects and the propensity for the bond pads to corrode during the dicing process, and reviews the conditions under which pit hole defects are formed during the final stages of the Cu-metallized wafer fabrication process. Indications are that strict control of wafer fab backend processes can reduce or eliminate the incidence of such defects, resulting in elimination of bond pad corrosion in the wafer dicing process.

Nano Probe Analysis of Device Characteristics Affected by Ring Type Crystalline Defect

2011 ◽  
Author(s):  
Jong Hak Lee ◽  
Yu Jun Lee ◽  
Jung Sam Kim ◽  
Seo Kyung Jeong ◽  
Min Su Kim ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Physical Method ◽  
Hybrid Analysis ◽  
Electrical Method ◽  
Ring Type ◽  
Crystalline Defects ◽  
Address Data ◽  
Signal Input ◽  
Crystalline Defect ◽  
Top View

Abstract In this work, crystalline defects (dislocations) occurred in the silicon substrate during annealing SOD (Spin On Dielectric) which is an easy choice for its superior STI gap-fill ability. The reversal of address data that share same SIO (Signal Input Out) line in a DQ arises from crystalline defects. The failure analysis of physical methods has difficulty finding minute defects within the active because it is scarcely detectable from the top view. Situation can be well understood by electrical analysis using the nano probe. Due to its ability to probing contact nodes around the fail area, a ring type crystalline defect which is hardly detected from the top view was effectively analyzed by 3D TEM with the assistance of nano probe. This work shows that hybrid analysis of electrical method by nano probe and physical method by 3D TEM is useful and effective in failure analysis in semiconductor.

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