In situ resistance measurements during physical vapor deposition of ultrathin metal films on Si(111) at room temperature

2017 ◽  
Vol 35 (5) ◽  
pp. 051802
Author(s):  
Bernhard Lutzer ◽  
Ole Bethge ◽  
Christina Zimmermann ◽  
Jürgen Smoliner ◽  
Emmerich Bertagnolli
Keyword(s):  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Room Temperature ◽  
Metal Films ◽  
Ultrathin Metal Films

Off-Line Direct Deposition Gas Chromatography/Surface-Enhanced Raman Scattering and the Ramifications for On-Line Measurements

2005 ◽  
Vol 59 (11) ◽  
pp. 1305-1309 ◽  
Author(s):  
David A. Heaps ◽  
Peter R. Griffiths
Keyword(s):  
Gas Chromatography ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Room Temperature ◽  
Warm Up ◽  
Surface Enhanced ◽  
Surface Enhanced Raman ◽  
On Line ◽  
Enhanced Raman Scattering ◽  
Moving Liquid

Surface-enhanced Raman spectra (SERS) of molecules separated by gas chromatography (GC) were measured off-line by condensing the analyte on a moving, liquid-nitrogen-cooled ZnSe window on which a 5 nm layer of silver had been formed by physical vapor deposition. After the components that eluted from the chromatograph had been deposited, the substrate was allowed to warm up to room temperature and transferred to the focus of a Raman microspectrometer where the spectrum of each component was measured. Band intensities in the spectrum of 3 ng of caffeine prepared in this way were approximately the same as in the spectrum of bulk caffeine. By making some logical assumptions, it was shown that identifiable GC/SERS spectra of 30 pg of many molecules could be measured over a 300 cm−1 region in real-time and that if an optimized substrate were used the minimum identifiable quantity could be reduced to 1 pg or less.

Freestanding FeCrAl-Y2O3 Amorphous/Crystalline Composite Coating Fabricated by Electron-Beam Physical Vapor Deposition

2014 ◽  
Vol 788 ◽  
pp. 652-656
Author(s):  
Xiu Lin ◽  
Guang Ping Song ◽  
Hua Song Gou ◽  
Yi Jie Zhao ◽  
Yang Chen ◽  
...  
Keyword(s):  
Activation Energy ◽  
Electron Beam ◽  
Substrate Temperature ◽  
Composite Coating ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Room Temperature ◽  
Crystallization Activation Energy ◽  
Substrate Side ◽  
Columnar Grains

Freestanding FeCrAl-Y2O3 amorphous/crystalline composite coating with a thickness of about 200μm has been produced from electron-beam physical vapor deposition of FeCrAl and yttria materials with a substrate temperature of 500 oC around. The microstructure was composed of columnar grains near the substrate side and an amorphous top layer. Local crystallization occurred during room temperature preservation. It is inferred that the crystallization activation energy of the material is very low.

A novel method for in-situ synthesized TiN coatings by plasma spray-physical vapor deposition

2018 ◽  
Vol 217 ◽  
pp. 127-130 ◽  
Author(s):  
Chen Song ◽  
Min Liu ◽  
Zi-Qian Deng ◽  
Shao-Peng Niu ◽  
Chun-Ming Deng ◽  
...  
Keyword(s):  
Plasma Spray ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Tin Coatings ◽  
Novel Method

Growth and characterization of Ge nanostructures on Si(111)

2001 ◽  
Vol 696 ◽  
Author(s):  
F. Rosei ◽  
N. Motta ◽  
A. Sgarlata ◽  
A. Balzarotti
Keyword(s):  
Scanning Probe Microscopy ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Misfit Strain ◽  
Contact Angles ◽  
Scanning Probe ◽  
Wetting Layer ◽  
Reconstructed Surfaces

AbstractScanning Probe Microscopy (SPM) in situ is used to study the evolution of Ge islands grown by Physical Vapor Deposition on Si(111) 7×7 reconstructed surfaces. Large 3D islands form on the Wetting Layer (WL), with average lateral dimension in the range 200 - 500 nm. The statistical distribution of the island shapes has been analyzed, showing that three types of shapes coexist under certain conditions: strained, partially relaxed and ripened (atoll-like) islands. We measured the contact angles of the island facets, and observed the depletion of the substrate around the ripened islands. These features are attributed to the misfit strain, which is partially relieved by interdiffusion of Si into the Ge layers.

scholarly journals Room temperature PVD TiN to improve the ferroelectric properties of HZO films in the BEoL

MRS Advances ◽  
2021 ◽  
Author(s):  
David Lehninger ◽  
Konstantin Mertens ◽  
Lukas Gerlich ◽  
Maximilian Lederer ◽  
Tarek Ali ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Hafnium Oxide ◽  
Physical Vapor Deposition ◽  
Room Temperature ◽  
Ferroelectric Properties ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Logic Device ◽  
Process Gas ◽  
The Impact

Abstract Zirconium-doped hafnium oxide (HZO) crystallizes at low temperatures and is thus ideal to implement ferroelectric (FE) functionalities into the back end of line (BEoL). Therefore, metal-ferroelectric-metal (MFM) capacitors are of great interest. Placed in the BEoL, they can be connected either to the drain- or the gate-contact of a standard logic device to realize different emerging FE-embedded non-volatile memory (eNVM) concepts. However, the low crystallization temperature increases also the risk for a premature crystallization of the HZO films during the growth of the top electrode (TE), in particular, if high-temperature processes like atomic layer deposition (ALD) or chemical vapor deposition (CVD) are used. Herein, the TE is deposited at room temperature via physical vapor deposition (PVD). The impact of different process gas flows on the FE properties of the HZO films is studied by X-ray diffraction and polarization versus electric field measurements. Graphic abstract

Synthesis and nanorod growth of n-type phthalocyanine on ultrathin metal films by chemical vapor deposition

2016 ◽  
Vol 55 (3S2) ◽  
pp. 03DD07 ◽  
Author(s):  
Yasuko Koshiba ◽  
Mihoko Nishimoto ◽  
Asuka Misawa ◽  
Masahiro Misaki ◽  
Kenji Ishida
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Metal Films ◽  
Ultrathin Metal Films ◽  
Nanorod Growth

Microstructure and Coarsening in Mazed Bicrystal Films of Au Grown on Ge Substrates

2000 ◽  
Vol 648 ◽  
Author(s):  
Tamara Radetic ◽  
Ulrich Dahmen
Keyword(s):  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Morphological Analysis ◽  
Grain Shape ◽  
Strong Dependence ◽  
Si Substrates ◽  
Transmission Electron ◽  
Grain Orientations ◽  
Quantitative Morphological Analysis

AbstractThin films of gold (Au) were grown on single crystal germanium (Ge) or silicon (Si) substrates using physical vapor deposition (PVD). The resulting microstructure was that of a mazed bicrystal in which two equivalent grain orientations, related to each other by a 90° rotation, are arranged in a morphology of irregularly shaped, convoluted grains. Quantitative morphological analysis showed a strong dependence of grain shape on size, with larger grains being more convoluted and smaller grains more compact. The evolution of grain size, anisotropy and shape during heating in the temperature range from 300-340 °C was studied by in-situ transmission electron microscopy (TEM).

Thermodynamic Constraints for the In Situ MOCVD Growth of Superconducting Tl-Ba-Ca-Cu-O Thin Films

1993 ◽  
Vol 335 ◽  
Author(s):  
William L. Holstein
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Mocvd Growth ◽  
Metal Organic ◽  
Deposition Processes ◽  
Organic Chemical Vapor Deposition

AbstractIn spite of several attempts, superconducting Tl-Ba-Ca-Cu-O thin films have not been successfully prepared in situ by metal organic chemical vapor deposition (MOCVD). Preparation of a phase by MOCVD requires that it be thermodynamically stable with respect to its decomposition into volatile species and other condensed phases. For MOCVD growth of Tl-Ba- Ca-Cu-O compounds in the presence of oxygen from reagents containing only C-H or C-H-O ligands, Tl2O(g) and TIOH(g) exhibit appreciable volatility. If reagents with ligands containing fluorine are used, the formation of volatile TIF(g) must also be considered. Thermodynamic data for these materials are compiled, and thermodynamic relationships between these gases, H2O(g) and HF(g) are established. The thermodynamic stability of TIOH(g) and TIF(g) makes the in situ growth of Tl-Ba-Ca-Cu-O compounds by MOCVD more difficult than their in situ growth by physical vapor deposition processes, for which Tl2O(g) is the only volatile TI-containing species present.

Microstructure and Properties of CoSi2 Thin Films on (100) Silicon by Laser Physical Vapor Deposition

1992 ◽  
Vol 285 ◽  
Author(s):  
P. Tiwari ◽  
R. Chowdhury ◽  
J. Narayan
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Room Temperature ◽  
X Ray Diffraction ◽  
X Ray ◽  
Microstructure And Properties ◽  
Transmission Electron ◽  
Substrate Temperatures ◽  
Deposited Films

ABSTRACTLaser physical vapor deposition (LPVD) has been used to deposit thin CoSi2 films on (001)silicon at different substrate temperatures ranging from room temperature to 600°C. Particulate-free silicide thin films were characterized by X-ray diffraction, Rutherford backscattering, and high resolution transmission electron microscopy. We have found that films deposited at 200°C and below are amorphous; 400°C deposited films are polycrystalline whereas films deposited at 600°C are of epitaxial nature. The Effect of subsequent annealing on resistivity of room-temperature deposited thin films has been investigated. The resistivity value decreases to less than 15 μΩcm after annealing making these films suitable for microelectronics applications. The correlation between microstructure and properties of these films are discussed.

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