Microstructure and Properties of CoSi2 Thin Films on (100) Silicon by Laser Physical Vapor Deposition

1992 ◽  
Vol 285 ◽  
Author(s):  
P. Tiwari ◽  
R. Chowdhury ◽  
J. Narayan
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Room Temperature ◽  
X Ray Diffraction ◽  
X Ray ◽  
Microstructure And Properties ◽  
Transmission Electron ◽  
Substrate Temperatures ◽  
Deposited Films

ABSTRACTLaser physical vapor deposition (LPVD) has been used to deposit thin CoSi2 films on (001)silicon at different substrate temperatures ranging from room temperature to 600°C. Particulate-free silicide thin films were characterized by X-ray diffraction, Rutherford backscattering, and high resolution transmission electron microscopy. We have found that films deposited at 200°C and below are amorphous; 400°C deposited films are polycrystalline whereas films deposited at 600°C are of epitaxial nature. The Effect of subsequent annealing on resistivity of room-temperature deposited thin films has been investigated. The resistivity value decreases to less than 15 μΩcm after annealing making these films suitable for microelectronics applications. The correlation between microstructure and properties of these films are discussed.

Structrual Characterization and Raman Scattering of Epitaxial Aluminum Nitride Thin Films on Si(111)

1992 ◽  
Vol 242 ◽  
Author(s):  
W. J. Meng ◽  
T. A. Perry ◽  
J. Heremans ◽  
Y. T. Cheng
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Raman Scattering ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
X Ray Diffraction ◽  
X Ray ◽  
Reactive Sputter Deposition ◽  
Transmission Electron ◽  
Substrate Temperatures

ABSTRACTThin films of aluminum nitride were grown epitaxially on Si(111) by ultra-high-vacuum dc magnetron reactive sputter deposition. Epitaxy was achieved at substrate temperatures of 600° C or above. We report results of film characterization by x-ray diffraction, transmission electron microscopy, and Raman scattering.

Electrical Resistivity Improvement by Precipitation and Strain in Al-Cu Thin Films

2010 ◽  
Vol 305-306 ◽  
pp. 33-37 ◽  
Author(s):  
S. Lallouche ◽  
M.Y. Debili
Keyword(s):  
Thin Films ◽  
Copper Content ◽  
Room Temperature ◽  
Structural Features ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Transmission Electron ◽  
Hall Method

This work deals with Al-Cu thin films, deposited onto glass substrates by RF (13.56MHz) magnetron sputtering, and annealed at 773K. The film thickness was approximately the same 3-4µm. They are characterized with respect to microstructure, grain size, microstrain, dislocation density and resistivity versus copper content. Al (Cu) deposits containing 1.8, 7.21, 86.17 and 92.5at%Cu have been investigated. The use of X-ray diffraction analysis and transmission electron microscopy lead to the characterization of different structural features of films deposited at room temperature (< 400K) and after annealing (773K). The resistivity of the films was measured using the four-point probe method. The microstrain profile obtained from XRD thanks to the Williamson-Hall method shows an increase with increasing copper content.

Room temperature copolymerization to improve the thermal and dielectric properties of polyxylylene thin films by chemical vapor deposition

1994 ◽  
Vol 9 (12) ◽  
pp. 3125-3130 ◽  
Author(s):  
Justin F. Gaynor ◽  
Seshu B. Desu
Keyword(s):  
Thin Films ◽  
Weight Loss ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Dielectric Constants ◽  
X Ray Diffraction ◽  
X Ray ◽  
Conformal Coatings

Polyxylylene thin films grown by chemical vapor deposition (CVD) have long been utilized for uniform, pinhole-free conformal coatings. Homopolymer films are highly crystalline and have a glass transition temperature around room temperature. We show room temperature copolymerization with previously untested comonomers during the CVD process. Samples were studied with wavelength dispersive analysis, FTIR, scanning variable angle ellipsometry, and x-ray diffraction. Copolymerizing chloro-p-xylylene with perfluoro-octyl methacrylate results in dielectric constants at optical frequencies as low as 2.19, compared to 2.68 for the homopolymer. Copolymerizing p-xylylene with 4-vinylbiphenyl resulted in films whose onset of weight loss in TGA measurements was 450 °C, compared to 270 °C for the homopolymer.

Heteroepitaxial Growth of Epitaxial C60-Thin Films on Mica(001)

1994 ◽  
Vol 359 ◽  
Author(s):  
S. Henke ◽  
K.H. Thürer ◽  
S. Geier ◽  
B. Rauschenbach ◽  
B. Stritzker
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Substrate Temperature ◽  
Room Temperature ◽  
Heteroepitaxial Growth ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Substrate Temperatures

ABSTRACTOn mica(001) thin C60-films are deposited by thermal evaporation at substrate temperatures from room temperature up to 225°C. The dependence of the structure and the epitaxial alignment of the thin C60-films on mica(001) on the substrate temperature and the film thickness up to 1.3 μm at a well-defined deposition rate (0.008 nm/s) is investigated by atomic force microscopy and X-ray diffraction. The shape and the size of the C60-islands, which have an influence on the film quality at larger film thicknesses, are sensitively dependent on the substrate temperature. At a film thickness of 200 nm the increase of the substrate temperature up to 225°C leads to smooth, completely coalesced epitaxial C60-thin films characterized by a roughness smaller than 1.5 nm, a mosaic spread Δω of 0.1° and an azimuthal alignment ΔΦ of 0.45°.

InSe Nanothin Film with Ar-Gas Low Vacuum Pressure

2014 ◽  
Vol 606 ◽  
pp. 15-18
Author(s):  
Falah I. Mustafa ◽  
Mooroj Ali
Keyword(s):  
Thin Films ◽  
Diffraction Analysis ◽  
Room Temperature ◽  
Energy Gap ◽  
X Ray Diffraction ◽  
Argon Gas ◽  
X Ray ◽  
Glass Substrates ◽  
Deposited Film ◽  
Deposited Films

InxSe1-x(x = 0.4, 0.5, 0.6) thin films are deposited at room temperature on glass substrates with thickness ~500nm by thermal evaporation technique. The X-Ray diffraction analysis showed that both the as-deposited films In2Se3and InSe (x= 0.4 and 0.5) are amorphous in nature while the as-deposited film In3Se2is polycrystalline and the values of energy gap are Eg=1.44eV for In2Se3, Eg=1.16eV for InSe and Eg=0.78eV for In3Se2. The same technique used with insert Argon gas at pressure 0.1 mbar where InxSe1-x(x = 0.4, 0.5, 0.6) thin films are deposited at room temperature on glass substrates with thickness ~100nm. The X-Ray diffraction analysis showed that the as-deposited films In2Se3are amorphous in nature while the as-deposited film InSe and In3Se2are Nanocrystalline with grain size 33nm and 55nm respectively and the values of energy gap are Eg=1.55eV for InSe and Eg=1.28eV for In3Se2. The energy gap of InSe thin films increase with Argon gas assist and phases changes from amorphous and polycrystalline to nanostructure material by thermal vacuum deposition technique.

Effects of Microstructure on Photoluminescence of SrS:Eu2+,SM3+ thin Films

1993 ◽  
Vol 301 ◽  
Author(s):  
Susan Z. Hua ◽  
L. Salamanca-Riba ◽  
M. Wuttig ◽  
P. K. Soltani
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Growth Rates ◽  
Growth Conditions ◽  
Photoluminescence Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Substrate Temperatures ◽  
The Eu

ABSTRACTThe microstructure and its effects on the photoluminescence properties of SrS:Eu2+,Sm3+ thin films grown with different conditions were studied by transmission electron microscopy, x-ray diffraction and photoluminescence techniques. The SrS:Eu2+,Sm3+ thin films were prepared by e-beam evaporation at different substrate temperatures and growth rates. Both of these growth conditions affect the crystallinity of the thin films. The Sm3+ emission is stronger in the films grown at higher growth rates and at an optimum substrate temperature. We believe that the stronger Sm3+ emission is due to the higher population of Sm trivalent charge states in the films. Further increase of the substrate temperature increases the grain size in the films, but has no significant effect on the PL emission properties. In contrast, the Eu2+ emission is less sensitive to growth conditions.

scholarly journals Nanoindentation and Adhesion Properties of Ta Thin Films

2013 ◽  
Vol 2013 ◽  
pp. 1-7 ◽  
Author(s):  
Yuan-Tsung Chen
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Protective Layer ◽  
Body Centered Cubic ◽  
X Ray Diffraction ◽  
Adhesion Properties ◽  
X Ray ◽  
Mean Grain Size ◽  
Bcc Structure ◽  
Deposited Films

Ta films were sputtered onto a glass substrate with thicknesses from 500 Å to 1500 Å under the following conditions: (a) as-deposited films were maintained at room temperature (RT), (b) films were postannealed atTA=150°C for 1 h, and (c) films were postannealed atTA=250°C for 1 h. X-ray diffraction (XRD) results revealed that the Ta films had a body-centered cubic (BCC) structure. Postannealing conditions and thicker Ta films exhibited a stronger Ta (110) crystallization than as-deposited and thinner films. The nanoindention results revealed that Ta thin films are sensitive to mean grain size, including a valuable hardness (H) and Young’s modulus (E). High nanomechanical properties of as-deposited and thinner films can be investigated by grain refinement, which is consistent with the Hall-Petch effect. The surface energy of as-deposited Ta films was higher than that in postannealing treatments. The adhesion of as-deposited Ta films was stronger than postannealing treatments because of crystalline degree effect. The maximalHandEand the optimal adhesion of an as-deposited 500-Å-thick Ta film were 15.6 GPa, 180 GPa, and 51.56 mJ/mm2, respectively, suggesting that a 500-Å-thick Ta thin film can be used in seed and protective layer applications.

Solid State Amorphization in the Interfacial Reactions of Yttrium Thin Films on (111)Si

1993 ◽  
Vol 311 ◽  
Author(s):  
T.T. Lee ◽  
L.L. Chen
Keyword(s):  
Thin Films ◽  
Electron Spectroscopy ◽  
Room Temperature ◽  
Amorphous Layer ◽  
Interfacial Reactions ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
State Amorphization ◽  
Amorphous Interlayer

ABSTRACTInterfacial reactions of ultrahigh vacuum deposited yttrium thin films on atomically clean (111)Si at low temperatures have been studied by both conventional and high resolution transmission electron microscopy, Auger electron spectroscopy and x-ray diffraction. A 10–nm–thick yttrium thin film, deposited onto (lll)Si at room temperature, was found to completely intermix with Si to form an 11–nm–thick amorphous interlayer. Crystalline Y5Si3 and Si were observed to nucleate first within the amorphous interlayer in samples annealed at temperatures lower than 200 °C. Epitaxial YSi2−x was found to be the only phase formed at the interface of amorphous interlayer and crystalline Si in samples annealed at temperatures higher than 250 °C. In as deposited 20– to 60–nm thick Y thin films on silicon samples, crystalline Y5Si3, Si, and YSi and a 2.5–nm–thick amorphous layer were found to be present simultaneously.

MOCVD Growth of Epitaxial SrTiO3 Thin Films on YBa2 Cu3O7−x/LaAlO3

1993 ◽  
Vol 335 ◽  
Author(s):  
S. Liang ◽  
C. Chern ◽  
Z. Q. Shi ◽  
Y. Lu ◽  
P. Lu ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Ac Susceptibility ◽  
Superconducting Property ◽  
Growth Conditions ◽  
X Ray Diffraction ◽  
X Ray ◽  
Mocvd Growth ◽  
Transmission Electron ◽  
Substrate Temperatures

AbstractStrontium titanate (SrTiO3) thin films have been epitaxially grown on YB2Cu3O7−x (YBCO)/LaAlO3 at substrate temperatures of 660 to 700°C. X-ray diffraction (XRD) results indicated that single crystalline SrTiO3 thin films were epitaxially grown on the substrate with <100> orientation perpendicular to the substrates. The compositions of the films with different growth conditions were examined by Rutherford backscattering spectroscopy (RBS) and energy dispersive x-ray spectroscopy (EDX). The ratio of Sr/Ti is in the range of 0.9 to 1.1 for the films with a thickness of 1000–2000Å. The surface morphology of the films and the interfaces of the SrTiO3/YBCO structure were examined by scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). Very smooth surface and sharp interface were observed. The superconducting property of the YBCO layer, as measured by ac susceptibility, did not degrade after growth of SrTiO3 film. The dielectric constant as high as 320 was obtained at 100KHz. The leakage current density is less than 1×10−6A/cm2 at 3V operation.

Al-Ge Phase Separation During Vapor Deposition

1990 ◽  
Vol 187 ◽  
Author(s):  
C. D. Adams ◽  
M. Atzmon ◽  
Y.-T. Cheng ◽  
D. J. Srolovitz
Keyword(s):  
Electron Microscopy ◽  
Surface Roughness ◽  
Vapor Deposition ◽  
Deposition Temperature ◽  
Room Temperature ◽  
Diffusion Mechanism ◽  
Fluorescence Analysis ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron

AbstractThe phase- and grain microstructure and surface morphology of Al-Ge films formed by electron beam co-deposition have been studied as a function of the deposition temperature. X-ray diffraction, scanning- and transmission electron microscopy with x-ray fluorescence analysis were used to characterize the films. At room temperature and above, crystalline, phase separated films are obtained. The phase dimensions and surface roughness were observed to increase with the deposition temperature and the dependence yields activation energies for atomic migration consistent with a surface diffusion mechanism. The surface roughness is observed to reflect the microstructure under the surface.

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