Unravelling the selective growth mechanism of AlOx with dimethylaluminum isopropoxide as a precursor in atomic layer deposition: a combined theoretical and experimental study

2020 ◽  
Vol 8 (8) ◽  
pp. 4308-4317 ◽  
Author(s):  
Jiaqiang Yang ◽  
Kun Cao ◽  
Quan Hu ◽  
Yanwei Wen ◽  
Xiao Liu ◽  
...  

The selective encapsulation of Pt nano catalysts is achieved to maintain the durability and reactivity.

Author(s):  
H.A. Borbón-Nuñez ◽  
Jesús Muñiz ◽  
A.G. El Hachimi ◽  
D. Frausto-Silva ◽  
J.L. Gutiérrez-Díaz ◽  
...  

2020 ◽  
Vol 7 (23) ◽  
pp. 2001493
Author(s):  
Yuanyuan Cao ◽  
Tobias Wähler ◽  
Hyoungwon Park ◽  
Johannes Will ◽  
Annemarie Prihoda ◽  
...  

2012 ◽  
Vol 30 (1) ◽  
pp. 01A115 ◽  
Author(s):  
Maarit Kariniemi ◽  
Jaakko Niinistö ◽  
Marko Vehkamäki ◽  
Marianna Kemell ◽  
Mikko Ritala ◽  
...  

2020 ◽  
Vol 32 (22) ◽  
pp. 9696-9703
Author(s):  
Woo-Hee Kim ◽  
Kihyun Shin ◽  
Bonggeun Shong ◽  
Ludovic Godet ◽  
Stacey F. Bent

RSC Advances ◽  
2015 ◽  
Vol 5 (29) ◽  
pp. 22712-22717 ◽  
Author(s):  
Soumyadeep Sinha ◽  
Devika Choudhury ◽  
Gopalan Rajaraman ◽  
Shaibal K. Sarkar

DFT study of the growth mechanism of atomic layer deposited Zn3N2 thin film applied as a channel layer of TFT.


Author(s):  
Joel Schneider ◽  
Jon Baker ◽  
Stacey Bent

This work demonstrates a mechanistic study of iron oxide deposited by ALD, revealing a growth mechanism involving uptake of superstoichiometric oxygen. Material characterization shows ozone exposure can be used to convert the crystallographic phase and domain orientation of the materials. This mechanism has implications for wider classes of ozone-based ALD processes and can generalize to other systems.<br>


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