Investigation of kink effect in normally-off AlGaN/GaN recessed-gate MOS-heterostructure FETs

2016 ◽  
Vol 34 (5) ◽  
pp. 052202 ◽  
Author(s):  
Youngjin Kang ◽  
Hyuk-kee Sung ◽  
Hyungtak Kim
Keyword(s):  
Kink Effect ◽  
Heterostructure Fets ◽  
Recessed Gate

High-current recessed gate enhancement-mode ultrawide bandgap Al x Ga1−x N channel MOSHFET with drain current 0.48 A mm−1 and threshold voltage +3.6 V

2021 ◽  
Vol 14 (1) ◽  
pp. 014003
Author(s):  
Shahab Mollah ◽  
Kamal Hussain ◽  
Abdullah Mamun ◽  
Mikhail Gaevski ◽  
Grigory Simin ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Drain Current ◽  
High Current ◽  
Enhancement Mode ◽  
Recessed Gate

High transconductance AlGaN/GaN-HEMT with recessed gate on sapphire substrate

2003 ◽  
Vol 200 (1) ◽  
pp. 187-190 ◽  
Author(s):  
Hideyuki Okita ◽  
Katsuaki Kaifu ◽  
Juro Mita ◽  
Tomoyuki Yamada ◽  
Yoshiaki Sano ◽  
...  
Keyword(s):  
Sapphire Substrate ◽  
Gan Hemt ◽  
High Transconductance ◽  
Recessed Gate

213 W 500 Mhz 4H-SiC Static Induction Transistor

2011 ◽  
Vol 130-134 ◽  
pp. 3392-3395 ◽  
Author(s):  
Gang Chen ◽  
Peng Wu ◽  
Song Bai ◽  
Zhe Yang Li ◽  
Yun Li ◽  
...  
Keyword(s):  
Current Density ◽  
Drain Current ◽  
Total Power ◽  
Class Ab ◽  
Blocking Voltage ◽  
Finger Width ◽  
Static Induction Transistor ◽  
Recessed Gate ◽  
Total Power Output ◽  
A Current

. Silicon carbide (SiC) SITs were fabricated using home-grown epi structures. The gate is a recessed gate - bottom contact (RG - B). We designed that the mesa space 2.7μm and the gate channel is 1.2μm. One cell has 400 source fingers and each source finger width is 100μm. 1mm SiC SIT yielded a current density of 123mA/mm of drain current at a drain voltage of 20V. A maximum current density of 150 mA/mm was achieved with Vd=40V. The device blocking voltage with a gate bias of-16 V was 200 V. Packaged 24-cm devices were evaluated using amplifier circuits designed for class AB operations. A total power output in excess of 213 W was obtained with a power density of 8.5 W/cm and gain of 8.5 dB at 500 MHz under pulse operation.

Normally-off GaN MIS-HEMT using a combination of recessed-gate structure and CF4plasma treatment

2015 ◽  
Vol 212 (5) ◽  
pp. 1170-1173 ◽  
Author(s):  
Youngrak Park ◽  
Jungjin Kim ◽  
Woojin Chang ◽  
Dongyun Jung ◽  
Sungbum Bae ◽  
...  
Keyword(s):  
Gate Structure ◽  
Recessed Gate

scholarly journals Kink Effect in ${\rm S}_{22}$ for GaN and GaAs HEMTs

2015 ◽  
Vol 25 (5) ◽  
pp. 301-303 ◽  
Author(s):  
Giovanni Crupi ◽  
Antonio Raffo ◽  
Alina Caddemi ◽  
Giorgio Vannini
Keyword(s):  
Kink Effect

Efficacy of Ar in reducing the kink effect on floating-body NFD/SOI CMOS

2002 ◽  
Author(s):  
D. Chang ◽  
S. Veeraraghavan ◽  
M. Mendicino ◽  
M. Rashed ◽  
D. Connelly ◽  
...  
Keyword(s):  
Floating Body ◽  
Kink Effect ◽  
Soi Cmos

Normally-off AlGaN/AlN/GaN HEMT with a composite recessed gate

2021 ◽  
pp. 107064
Author(s):  
Jialin Li ◽  
Yian Yin ◽  
Ni Zeng ◽  
Fengbo Liao ◽  
Mengxiao Lian ◽  
...  
Keyword(s):  
Gan Hemt ◽  
Recessed Gate
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