Normally-off GaN MIS-HEMT using a combination of recessed-gate structure and CF4plasma treatment

2015 ◽  
Vol 212 (5) ◽  
pp. 1170-1173 ◽  
Author(s):  
Youngrak Park ◽  
Jungjin Kim ◽  
Woojin Chang ◽  
Dongyun Jung ◽  
Sungbum Bae ◽  
...  
Keyword(s):  
Gate Structure ◽  
Recessed Gate

Silicon Oxide enhanced Schottky gate In0.53Ga0.47As FET's with a self-aligned recessed gate structure

1984 ◽  
Vol 5 (12) ◽  
pp. 511-514 ◽  
Author(s):  
C.L. Cheng ◽  
A.S.H. Liao ◽  
T.Y. Chang ◽  
E.A. Caridi ◽  
L.A. Coldren ◽  
...  
Keyword(s):  
Silicon Oxide ◽  
Gate Structure ◽  
Recessed Gate

scholarly journals Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate

Materials ◽  
2020 ◽  
Vol 13 (7) ◽  
pp. 1538 ◽  
Author(s):  
Hyun-Seop Kim ◽  
Myoung-Jin Kang ◽  
Jeong Jin Kim ◽  
Kwang-Seok Seo ◽  
Ho-Young Cha
Keyword(s):  
High Electron Mobility Transistors ◽  
Gate Insulator ◽  
High Electron ◽  
Aluminum Oxynitride ◽  
Characterization Methods ◽  
Field Plate ◽  
Electron Mobility Transistors ◽  
Gate Structure ◽  
Recessed Gate ◽  
Gate Recess

This study investigated the effects of a thin aluminum oxynitride (AlOxNy) gate insulator on the electrical characteristics of AlGaN/GaN-on-SiC metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs). The fabricated AlGaN/GaN-on-SiC MIS-HEMTs exhibited a significant reduction in gate leakage and off-state drain currents in comparison with the conventional Schottky-gate HEMTs, thus enhancing the breakdown voltage. The effects of gate recess were also investigated while using recessed MIS-HEMT configuration. The Johnson’s figures of merit (= fT × BVgd) for the fabricated MIS-HEMTs were found to be in the range of 5.57 to 10.76 THz·V, which is the state-of-the-art values for GaN-based HEMTs without a field plate. Various characterization methods were used to investigate the quality of the MIS and the recessed MIS interface.

A Recessed-Gate In0.52Al0.48As/n+-In0.53Ga0.47As Misfet

1988 ◽  
Vol 144 ◽  
Author(s):  
Jesús A. del Alamo ◽  
Takashi Mizutani
Keyword(s):  
High Performance ◽  
Current Gain ◽  
Device Performance ◽  
Promising Candidate ◽  
Gate Structure ◽  
Source Resistance ◽  
Heavily Doped ◽  
Recessed Gate ◽  
Improve Device ◽  
A Current

ABSTRACTScaling of the In0.52Al0.48As insulator thickness of In0.52Al0.48As/n+-In0.53Ga0.47As MIStype FET's is experimentally found to result in a drastic drop of performance below 200 Å. This is demonstrated to arise from an increase in the sheet resistance of the extrinsic portions of the device that accompanies insulator scaling. In order to solve this problem, a recessed-gate dopedchannel MISFET with a very thin (300 Å) n+-In0.53Ga0.47As cap layer has been fabricated. A 1.5 μm long gate device showed a transconductance of 285 mS/mm and a current-gain cut-off frequency of 19.4 GHz. This result proves the ability of a thin n+-In0.53Ga0.47As cap to reduce source resistance and improve device performance. The fabricated recessed-gate structure is a promising candidate for high-performance scaled MIS-type FET's based on thin, heavily-doped In0.53Gav0.47 As channels.

Improved hysteresis in a normally-off AlGaN/GaN MOS heterojunction field-effect transistor with a recessed gate structure formed by selective regrowth

2017 ◽  
Vol 56 (9) ◽  
pp. 091003 ◽  
Author(s):  
Satoshi Nakazawa ◽  
Nanako Shiozaki ◽  
Noboru Negoro ◽  
Naohiro Tsurumi ◽  
Yoshiharu Anda ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Gate Structure ◽  
Effect Transistor ◽  
Recessed Gate

A New GaAs MESFET with a Selectively Recessed Gate Structure

1983 ◽  
Author(s):  
Issey OHTA ◽  
Tatsuo OTSUKI ◽  
Masaru KAZUMURA ◽  
Gota KANO
Keyword(s):  
Gaas Mesfet ◽  
Gate Structure ◽  
Recessed Gate

Suppression of Short-Channel Effects in Normally-off GaN MOSFETs with Deep Recessed-Gate Structure

2019 ◽  
Author(s):  
D. Kato ◽  
Y. Kajiwara ◽  
A. Mukai ◽  
H. Ono ◽  
A. Shindome ◽  
...  
Keyword(s):  
Short Channel Effects ◽  
Short Channel ◽  
Gate Structure ◽  
Channel Effects ◽  
Recessed Gate
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