scholarly journals Deep traps and instabilities in AlGaN/GaN high electron mobility transistors on Si substrates

2016 ◽  
Vol 34 (4) ◽  
pp. 041216 ◽  
Author(s):  
Alexander Y. Polyakov ◽  
N. B. Smirnov ◽  
A. V. Turutin ◽  
I. S. Shemerov ◽  
Fan Ren ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Si Substrates ◽  
Electron Mobility Transistors ◽  
Deep Traps

Deep Traps in AlGaN/GaN High Electron Mobility Transistors on SiC

2016 ◽  
Vol 5 (10) ◽  
pp. Q260-Q265 ◽  
Author(s):  
A. Y. Polyakov ◽  
N. B. Smirnov ◽  
A. A. Dorofeev ◽  
N. B. Gladysheva ◽  
E. S. Kondratyev ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Deep Traps

scholarly journals High Electron Mobility Transistors Using AlGaN Materials

2019 ◽  
Author(s):  
Xiejia
Keyword(s):  
Electron Mobility ◽  
Low Cost ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Dimensional Electron ◽  
High Electron Mobility ◽  
Si Substrates ◽  
Electron Mobility Transistors ◽  
Dimensional Electron Gas

High electron mobility AlGaN/GaN have been successfully grown on low cost and high challenges AlN/Si substrates. By inserting a thin SiN layer between GaN and AlN to improve the quality of GaN, the result showed that the thin SiN layer could greatly increase the mobility of the two-dimensional electron gas formed at the interface of AlGaN and GaN layers. This suggests that it is possible to grow high-quality GaN on silicon as well as on sapphire for many applications

scholarly journals AlGaN Based High Electron Mobility Transistors

2019 ◽  
Author(s):  
Yu Yun ◽  
Xiejia
Keyword(s):  
Electron Mobility ◽  
Low Cost ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Dimensional Electron ◽  
High Electron Mobility ◽  
Si Substrates ◽  
Electron Mobility Transistors ◽  
Dimensional Electron Gas

High electron mobility AlGaN/GaN have been successfully grown on low cost and high challenges AlN/Si substrates. By inserting a thin SiN layer between GaN and AlN to improve the quality of GaN, the result showed that the thin SiN layer could greatly increase the mobility of the two-dimensional electron gas formed at the interface of AlGaN and GaN layers. This suggests that it is possible to grow high-quality GaN on silicon as well as on sapphire for many applications

scholarly journals Study of deep traps in AlGaN/GaN high-electron mobility transistors by electrical characterization and simulation

2019 ◽  
Vol 125 (3) ◽  
pp. 035702 ◽  
Author(s):  
Philippe Ferrandis ◽  
Mariam El-Khatib ◽  
Marie-Anne Jaud ◽  
Erwan Morvan ◽  
Matthew Charles ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Electrical Characterization ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Deep Traps
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