scholarly journals Analysis of carrier transport and band tail states in p-type tin monoxide thin-film transistors by temperature dependent characteristics

2016 ◽  
Vol 108 (26) ◽  
pp. 263503 ◽  
Author(s):  
Jiawei Zhang ◽  
Xi Kong ◽  
Jia Yang ◽  
Yunpeng Li ◽  
Joshua Wilson ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Carrier Transport ◽  
Temperature Dependent ◽  
Band Tail ◽  
P Type ◽  
Tin Monoxide

Analysis of Carrier Transport Mechanism for p-Type SnO Thin-Film Transistor

2017 ◽  
Vol 748 ◽  
pp. 122-126
Author(s):  
Jian Qin ◽  
Lei Qiang
Keyword(s):  
Thin Film ◽  
Carrier Transport ◽  
Conduction Mechanism ◽  
Thin Film Transistor ◽  
Drain Current ◽  
Thermally Activated ◽  
Multiple Trapping ◽  
P Type ◽  
Tin Monoxide ◽  
Thermally Activated Process

Temperature effect on the I-V characteristics of tin monoxide thin film transistors (SnO TFTs) has been analyzed. The result shows that the drain current of the SnO TFT obeys the Meyer-Neldel rule under low temperature, where current conduction is a thermally activated process. The carrier transport would be dominated by multiple trapping conduction, while, percolation conduction mechanism holds as the temperature increase.

Thickness Effects on the Activation Energy of Source-Drain Current in P and N Channel Polycrystalline Silicon Thin Film Transistors

1990 ◽  
Vol 182 ◽  
Author(s):  
Babar A. Khan ◽  
Ranjana Pandya
Keyword(s):  
Thin Film ◽  
Activation Energy ◽  
Thin Film Transistors ◽  
Drain Current ◽  
Localized States ◽  
Subthreshold Slope ◽  
Band Tail ◽  
Silicon Thin Film ◽  
Sharp Drop ◽  
P Type

AbstractWe report activation energy measurements of the source-drain current of polysilicon thin film transistors (TFTs). We have shown earlier that measurements carried out on unhydrogenated TFTs can be explained by the presence of band tail states in addition to deep localized states. After hydrogenation, the density of band tail states is greatly reduced and the data can be fitted with only the deep states.In the present work we have studied both n and p channel TFTs. This was done by measuring both type of devices on the same wafer so that differences due to processing conditions could be ruled out. Both type of devices had intentionally undoped channels and were identical except for the n or p type source-drain regions. The thinner TFTs discussed in this work have a sharper drop in the activation energy than would be expected from idealized calculations. This sharp drop in activation energy is also an indication of a sharp subthreshold slope. This decrease in subthreshold slope (Volts/decade) is due to the complete depletion of the channel polysilicon, which leads to a rapid increase (or decrease) in the surface potential as a function of the gate voltage.

Subgap states in p-channel tin monoxide thin-film transistors from temperature-dependent field-effect characteristics

2015 ◽  
Vol 30 (8) ◽  
pp. 085004 ◽  
Author(s):  
Chan-Yong Jeong ◽  
Daeun Lee ◽  
Young-Joon Han ◽  
Yong-Jin Choi ◽  
Hyuck-In Kwon
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Temperature Dependent ◽  
Tin Monoxide ◽  
Dependent Field

Effects of air-annealing on the electrical properties of p-type tin monoxide thin-film transistors

2014 ◽  
Vol 29 (4) ◽  
pp. 045001 ◽  
Author(s):  
In-Tak Cho ◽  
Myeonghun U ◽  
Sang-Hun Song ◽  
Jong-Ho Lee ◽  
Hyuck-In Kwon
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Thin Film Transistors ◽  
P Type ◽  
Tin Monoxide

High-Gain Complementary Inverter Based on Corbino p-Type Tin Monoxide and n-Type Indium-Gallium-Zinc Oxide Thin-Film Transistors

2019 ◽  
Vol 40 (10) ◽  
pp. 1642-1645 ◽  
Author(s):  
Hyo-Jun Joo ◽  
Min-Gyu Shin ◽  
Soo-Hun Kwon ◽  
Ha-Yun Jeong ◽  
Hwan-Seok Jeong ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
High Gain ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Zinc Oxide Thin Film ◽  
Indium Gallium ◽  
P Type ◽  
Tin Monoxide

Effective performance improvement of organic thin film transistors with multi-layer modifications

2020 ◽  
Vol 91 (3) ◽  
pp. 30201
Author(s):  
Hang Yu ◽  
Jianlin Zhou ◽  
Yuanyuan Hao ◽  
Yao Ni
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Performance Enhancement ◽  
Organic Thin Film Transistors ◽  
Electrical Performance ◽  
Hole Injection ◽  
Organic Thin Film ◽  
Effective Performance ◽  
Significant Performance ◽  
P Type

Organic thin film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8BTBT) and copper (Cu) electrodes were fabricated. For improving the electrical performance of the original devices, the different modifications were attempted to insert in three different positions including semiconductor/electrode interface, semiconductor bulk inside and semiconductor/insulator interface. In detail, 4,4′,4′′-tris[3-methylpheny(phenyl)amino] triphenylamine (m-MTDATA) was applied between C8BTBTand Cu electrodes as hole injection layer (HIL). Moreover, the fluorinated copper phthalo-cyanine (F16CuPc) was inserted in C8BTBT/SiO2 interface to form F16CuPc/C8BTBT heterojunction or C8BTBT bulk to form C8BTBT/F16CuPc/C8BTBT sandwich configuration. Our experiment shows that, the sandwich structured OTFTs have a significant performance enhancement when appropriate thickness modification is chosen, comparing with original C8BTBT devices. Then, even the low work function metal Cu was applied, a normal p-type operate-mode C8BTBT-OTFT with mobility as high as 2.56 cm2/Vs has been fabricated.

scholarly journals Role of ALD Al2O3 Surface Passivation on the Performance of p-Type Cu2O Thin Film Transistors

2021 ◽  
Vol 13 (3) ◽  
pp. 4156-4164
Author(s):  
Mari Napari ◽  
Tahmida N. Huq ◽  
David J. Meeth ◽  
Mikko J. Heikkilä ◽  
Kham M. Niang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Surface Passivation ◽  
Cu2o Thin Film ◽  
P Type
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