At the edge between metal organic chemical vapor deposition and atomic layer deposition: Fast Atomic Sequential Technique, for high throughput conformal deposition

2016 ◽  
Vol 34 (2) ◽  
pp. 021202 ◽  
Author(s):  
Fabien Piallat ◽  
Julien Vitiello
Keyword(s):  
Chemical Vapor Deposition ◽  
High Throughput ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Organic Chemical ◽  
Layer Deposition ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Sequential Technique

Electrical and Optical Characteristics of Two-Dimensional MoS2 Film Grown by Metal-Organic Chemical Vapor Deposition

2020 ◽  
Vol 20 (6) ◽  
pp. 3563-3567 ◽  
Author(s):  
Donghwan Kim ◽  
Yonghee Jo ◽  
Dae Hyun Jung ◽  
Jae Suk Lee ◽  
TaeWan Kim
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Layer Structure ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Surface Element ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Atomically thin molybdenum disulfide (MoS2) films were synthesized on a SiO2/Si substrate by metal-organic chemical vapor deposition (MOCVD). Raman spectroscopy, transmission electron microscopy, and X-ray photoelectron spectroscopy studies reveal the double-atomic-layer structure and the surface element composition of the MOCVD-grown MoS2 films. The photoluminescence measurement demonstrates a strong emission peak with a bandgap of 685.1 nm, attributed to highly efficient radiative transition at the double atomic layer. The contact resistance between the doubleatomic-layer MoS2 film and metal electrode was measured using the transmission-line modeling method. A Ti/Au electrode forms an ohmic contact with the double-atomic-layer MOCVD-grown MoS2 film, exhibiting a resistivity of 100 kΩ. The field-effect transistor based on the double-atomiclayer MoS2 film exhibits an electron mobility of 1.3×10−4 cm2/V·s and an on/off ratio of 6.5×102 at room temperature.

Vacuum Chemical Epitaxy: High Throughput GaAs Epitaxy Without Arsine

1989 ◽  
Vol 145 ◽  
Author(s):  
L. M. Fraas ◽  
G. R. Girard ◽  
V. S. Sundaram ◽  
Chris Master ◽  
Rick Stall
Keyword(s):  
Chemical Vapor Deposition ◽  
Molecular Beam Epitaxy ◽  
High Throughput ◽  
Vapor Deposition ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Production Environment ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

AbstractMetal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) are well established methods for growing epitaxial GaAs and AlGaAs films. However, MOCVD equip- ment uses the highly toxic gas, arsine, and MBE equipment is very costly and coats only one wafer at a time. We have developed a vacuum chemical epitaxy (VCE) reactor which avoids the use of arsine and allows multiple wafers to be coated in a production environment.

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