Electronic properties of atomic-layer-deposited high-k dielectrics on GaSb(001) with hydrogen plasma pretreatment

2015 ◽  
Vol 33 (4) ◽  
pp. 04E102 ◽  
Author(s):  
Laura B. Ruppalt ◽  
Erin R. Cleveland ◽  
James G. Champlain ◽  
Brian R. Bennett ◽  
J. Brad Boos ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Hydrogen Plasma ◽  
Atomic Layer ◽  
High K ◽  
Plasma Pretreatment

Improved Growth Behavior of Atomic-Layer-Deposited High-k Dielectrics on Multilayer MoS2 by Oxygen Plasma Pretreatment

2013 ◽  
Vol 5 (11) ◽  
pp. 4739-4744 ◽  
Author(s):  
Jaehyun Yang ◽  
Sunkook Kim ◽  
Woong Choi ◽  
Sang Han Park ◽  
Youngkwon Jung ◽  
...  
Keyword(s):  
Oxygen Plasma ◽  
Atomic Layer ◽  
Growth Behavior ◽  
High K ◽  
Plasma Pretreatment

scholarly journals Integration of atomic layer deposited high-k dielectrics on GaSb via hydrogen plasma exposure

AIP Advances ◽  
2014 ◽  
Vol 4 (12) ◽  
pp. 127153 ◽  
Author(s):  
Laura B. Ruppalt ◽  
Erin R. Cleveland ◽  
James G. Champlain ◽  
Brian R. Bennett ◽  
Sharka M. Prokes
Keyword(s):  
Hydrogen Plasma ◽  
Atomic Layer ◽  
Plasma Exposure ◽  
High K

Optimized Al-doped TiO2 gate insulator for metal-oxide-semiconductor capacitor on Ge substrate

2021 ◽  
Author(s):  
Dong Gun Kim ◽  
Cheol Hyun An ◽  
Sanghyeon Kim ◽  
Dae Seon Kwon ◽  
Junil Lim ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Leakage Current ◽  
Tio2 Film ◽  
Single Layer ◽  
Atomic Layer ◽  
Metal Oxide Semiconductor ◽  
Gate Insulator ◽  
Oxide Semiconductor ◽  
High K ◽  
Metal Oxide Semiconductor Capacitor

Atomic layer deposited TiO2- and Al2O3-based high-k gate insulator (GI) were examined for the Ge-based metal-oxide-semiconductor capacitor application. The single-layer TiO2 film showed a too high leakage current to be...

scholarly journals Intercalated architecture of MA2Z4 family layered van der Waals materials with emerging topological, magnetic and superconducting properties

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Lei Wang ◽  
Yongpeng Shi ◽  
Mingfeng Liu ◽  
Ao Zhang ◽  
Yi-Lun Hong ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Density Functional ◽  
Layer Structure ◽  
Atomic Layer ◽  
Type I ◽  
Hybrid Functional ◽  
Functional Theory ◽  
Valence Electrons ◽  
Nonmagnetic Metals ◽  
Standard Density

AbstractThe search for new two-dimensional monolayers with diverse electronic properties has attracted growing interest in recent years. Here, we present an approach to construct MA2Z4 monolayers with a septuple-atomic-layer structure, that is, intercalating a MoS2-type monolayer MZ2 into an InSe-type monolayer A2Z2. We illustrate this unique strategy by means of first-principles calculations, which not only reproduce the structures of MoSi2N4 and MnBi2Te4 that were already experimentally synthesized, but also predict 72 compounds that are thermodynamically and dynamically stable. Such an intercalated architecture significantly reconstructs the band structures of the constituents MZ2 and A2Z2, leading to diverse electronic properties for MA2Z4, which can be classified according to the total number of valence electrons. The systems with 32 and 34 valence electrons are mostly semiconductors. Whereas, those with 33 valence electrons can be nonmagnetic metals or ferromagnetic semiconductors. In particular, we find that, among the predicted compounds, (Ca,Sr)Ga2Te4 are topologically nontrivial by both the standard density functional theory and hybrid functional calculations. While VSi2P4 is a ferromagnetic semiconductor and TaSi2N4 is a type-I Ising superconductor. Moreover, WSi2P4 is a direct gap semiconductor with peculiar spin-valley properties, which are robust against interlayer interactions. Our study thus provides an effective way of designing septuple-atomic-layer MA2Z4 with unusual electronic properties to draw immediate experimental interest.

Effects of hydrogen plasma pretreatment on characteristics of copper film deposited by remote plasma CVD using (hfac)Cu(TMVS)

2000 ◽  
Vol 375 (1-2) ◽  
pp. 132-136 ◽  
Author(s):  
Jong-Hyun Lee ◽  
Jeong-Hwan Lee ◽  
Ki-Ju Hwang ◽  
Jung-Yeul Kim ◽  
Chang-Gil Suk ◽  
...  
Keyword(s):  
Hydrogen Plasma ◽  
Copper Film ◽  
Plasma Cvd ◽  
Remote Plasma ◽  
Plasma Pretreatment

Double-atomic layer of Tl on Si(111): Atomic arrangement and electronic properties

2018 ◽  
Vol 668 ◽  
pp. 17-22 ◽  
Author(s):  
Alexey N. Mihalyuk ◽  
Leonid V. Bondarenko ◽  
Alexandra Y. Tupchaya ◽  
Dimitry V. Gruznev ◽  
Jyh-Pin Chou ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Atomic Layer ◽  
Atomic Arrangement

Atomic Layer Deposition of Zirconium-Based High-k Metal Gate Oxide: Effect of Si Containing Zr Precursor

2015 ◽  
Vol 15 (1) ◽  
pp. 382-385
Author(s):  
Jun Hee Cho ◽  
Sang-Ick Lee ◽  
Jong Hyun Kim ◽  
Sang Jun Yim ◽  
Hyung Soo Shin ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Gate Oxide ◽  
Metal Gate ◽  
Layer Deposition ◽  
High K
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