Improved Growth Behavior of Atomic-Layer-Deposited High-k Dielectrics on Multilayer MoS2 by Oxygen Plasma Pretreatment

2013 ◽  
Vol 5 (11) ◽  
pp. 4739-4744 ◽  
Author(s):  
Jaehyun Yang ◽  
Sunkook Kim ◽  
Woong Choi ◽  
Sang Han Park ◽  
Youngkwon Jung ◽  
...  
Keyword(s):  
Oxygen Plasma ◽  
Atomic Layer ◽  
Growth Behavior ◽  
High K ◽  
Plasma Pretreatment

Chemical Protection of Polycarbonate Surfaces by Atomic Layer Deposition of Alumina with Oxygen Plasma Pretreatment

2016 ◽  
Vol 3 (21) ◽  
pp. 1600340 ◽  
Author(s):  
Suk Won Park ◽  
Kiho Bae ◽  
Jun Woo Kim ◽  
Gyeong Beom Lee ◽  
Byoung-Ho Choi ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Oxygen Plasma ◽  
Atomic Layer ◽  
Chemical Protection ◽  
Layer Deposition ◽  
Plasma Pretreatment

A Selective Etching Process for Chemically Inert High-k Metal Oxides

2002 ◽  
Vol 745 ◽  
Author(s):  
Katherine L. Saenger ◽  
Harald F. Okorn-Schmidt ◽  
Christopher P. D'Emic
Keyword(s):  
Metal Oxides ◽  
Oxygen Plasma ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Ion Bombardment ◽  
Open Circuit ◽  
Si Substrates ◽  
High K ◽  
Wet Chemical ◽  
Wet Etch

ABSTRACTOnce annealed, high-k metal oxides such as HfO2 and Al2O3 can be extremely difficult to etch by wet chemical methods. Here we describe how ion bombardment at relatively low energy (a few hundred eV) can be used to make exposed regions of annealed HfO2 films etchable in aqueous HF-based solutions. HfO2 layers, 2–5 nm in thickness, were deposited by atomic layer chemical vapor deposition (ALCVD) on Si substrates, annealed at 700 °C, and subjected to selected-area ion bombardment supplied by an oxygen plasma in a reactive ion etching tool. Etch times (as indicated by time to “dewet“) were examined as a function of HfO2 thickness, the power and time of oxygen plasma treatments, post-oxygen-plasma anneals, and wet etch chemistry. Strategies for etching thicker films and additional data provided by electrochemical open circuit potential (OCP) measurements will also be discussed.

Atomic Layer Deposition of High-k Gate Dielectrics Using MO Precursor and Cyclic Plasma Exposure

2002 ◽  
Vol 745 ◽  
Author(s):  
Kazuhiko Endo ◽  
Toru Tatsumi
Keyword(s):  
Oxygen Plasma ◽  
Gate Dielectrics ◽  
Atomic Layer ◽  
Deposition Process ◽  
Plasma Oxidation ◽  
Plasma Exposure ◽  
Promising Candidate ◽  
Layer Deposition ◽  
High K ◽  
Background Reaction

ABSTRACTWe have successfully achieved an ALD like deposition of ZrO2 or HfO2 by using a MO precursor. The MO precursor used in this study was zirconium tetra-tert-butoxide (ZTB) Zr(t-OC(CH3)3)4 and hafnium tetra-tert-butoxide (HTB) Hf(t-OC(CH3)3)4. Because MO precursors are very sensitive to H2O, we used oxygen plasma as an oxidizer instead of H2O in order to reduce background H2O pressure and suppress the background reaction. As a result, we successfully achieved an ALD-like deposition proved by a self-limiting adsorption of MO precursor. The carbon content in the films was suppressed due to highly reactive oxygen plasma. The leakage current of the film with plasma oxidation is much lower than that of film with H2O oxidation. Thus, MO-ALD using a plasma oxidation is a promising candidate for the high-k gate deposition process.

scholarly journals Effect of Oxygen Source on the Various Properties of SnO2 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition

Coatings ◽  
2020 ◽  
Vol 10 (7) ◽  
pp. 692
Author(s):  
Jong Hyeon Won ◽  
Seong Ho Han ◽  
Bo Keun Park ◽  
Taek-Mo Chung ◽  
Jeong Hwan Han
Keyword(s):  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Carrier Concentration ◽  
High Mobility ◽  
Impurity Scattering ◽  
Atomic Layer ◽  
Growth Behavior ◽  
Layer Deposition ◽  
Growth Feature ◽  
O2 Plasma

Herein, we performed a comparative study of plasma-enhanced atomic layer deposition (PEALD) of SnO2 films using Sn(dmamp)2 as the Sn source and either H2O plasma or O2 plasma as the oxygen source in a wide temperature range of 100–300 °C. Since the type of oxygen source employed in PEALD determines the growth behavior and resultant film properties, we investigated the growth feature of both SnO2 PEALD processes and the various chemical, structural, morphological, optical, and electrical properties of SnO2 films, depending on the oxygen source. SnO2 films from Sn(dmamp)2/H2O plasma (SH-SnO2) and Sn(dmamp)2/O2 plasma (SO-SnO2) showed self-limiting atomic layer deposition (ALD) growth behavior with growth rates of ~0.21 and 0.07–0.13 nm/cycle, respectively. SO-SnO2 films showed relatively larger grain structures than SH-SnO2 films at all temperatures. Interestingly, SH-SnO2 films grown at high temperatures of 250 and 300 °C presented porous rod-shaped surface morphology. SO-SnO2 films showed good electrical properties, such as high mobility up to 27 cm2 V−1·s−1 and high carrier concentration of ~1019 cm−3, whereas SH-SnO2 films exhibited poor Hall mobility of 0.3–1.4 cm2 V−1·s−1 and moderate carrier concentration of 1 × 1017–30 × 1017 cm−3. This may be attributed to the significant grain boundary and hydrogen impurity scattering.

Optimized Al-doped TiO2 gate insulator for metal-oxide-semiconductor capacitor on Ge substrate

2021 ◽  
Author(s):  
Dong Gun Kim ◽  
Cheol Hyun An ◽  
Sanghyeon Kim ◽  
Dae Seon Kwon ◽  
Junil Lim ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Leakage Current ◽  
Tio2 Film ◽  
Single Layer ◽  
Atomic Layer ◽  
Metal Oxide Semiconductor ◽  
Gate Insulator ◽  
Oxide Semiconductor ◽  
High K ◽  
Metal Oxide Semiconductor Capacitor

Atomic layer deposited TiO2- and Al2O3-based high-k gate insulator (GI) were examined for the Ge-based metal-oxide-semiconductor capacitor application. The single-layer TiO2 film showed a too high leakage current to be...

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