Role of the electrode metal, waveform geometry, temperature, and postdeposition treatment on SET and RESET of HfO2-based resistive random access memory 1R-cells: Experimental aspects

2015 ◽  
Vol 33 (1) ◽  
pp. 01A107 ◽  
Author(s):  
Paolo Lorenzi ◽  
Rosario Rao ◽  
Fernanda Irrera
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Electrode Metal

Role of nitrogen incorporation into Al2O3-based resistive random-access memory

2014 ◽  
Vol 7 (7) ◽  
pp. 074202 ◽  
Author(s):  
Moon Young Yang ◽  
Katsumasa Kamiya ◽  
Hiroki Shirakawa ◽  
Blanka Magyari-Köpe ◽  
Yoshio Nishi ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Nitrogen Incorporation

Reliability of Atmosphere Pressure-Plasma Enhanced Chemical Vapor Deposition Deposited Indium Gallium Zinc Oxide Resistive Random Access Memory Device with Microwave Annealing

2020 ◽  
Vol 20 (7) ◽  
pp. 4057-4060
Author(s):  
Chien-Hung Wu ◽  
Song-Nian Kuo ◽  
Kow-Ming Chang ◽  
Yi-Ming Chen ◽  
Yu-Xin Zhang ◽  
...  
Keyword(s):  
Retention Time ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Thin Solid Films ◽  
Solid Films ◽  
Microwave Annealing ◽  
Annealing Conditions

Recently resistive random access memory (RRAM) is considered to be the most promising one to become the next generation memory since its simple Metal/Insulator/Metal (MIM) structure, lower power consumption and fabrication cost (Meena, J.S., et al., 2014. Overview of emerging nonvolatile memory technologies. Nanoscale Research Letters, 9(1), p.526). Due to some bottlenecks for current flash memory, such as high operation voltage, low operation speed, poor retention time and endurance, RRAM device is regarded as an alternative solution (Fuh, C.S., et al., 2011. Role of environmental and annealing conditions on the passivation-free In–Ga–Zn–O TFT. Thin Solid Films, 520, pp.1489–1494). In this investigation, the memory layer of RRAM device is IGZO, and it is deposited with AP-PECVD technique which can operate under atmosphere, reduce cost of the process. Microwave annealing (MWA) is used to enhance the RRAM device reliability (Fuh, C.S., et al., 2011. Role of environmental and annealing conditions on the passivation-free In–Ga–Zn–O TFT. Thin Solid Films, 520, pp.1489–1494). Experiment shows that with appropriate MWA treatment, the IGZO RRAM device exhibits better electrical characteristics, reliability issues such as numbers of switching cycle and data retention time are also improved (Teng, L.F., et al., 2012. Effects of microwave annealing on electrical enhancement of amorphous oxide semiconductor thin film transistor. Applied Physics Letters, 101, p.132901).

The role of the inserted layer in resistive random access memory device

2016 ◽  
Vol 3 (7) ◽  
pp. 076301
Author(s):  
Dainan Zhang ◽  
Guokun Ma ◽  
Huaiwu Zhang ◽  
Xiaoli Tang ◽  
Zhiyong Zhong ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Memory Device ◽  
Resistive Random Access Memory ◽  
Access Memory

scholarly journals Role of Ti and Pt electrodes on resistance switching variability of HfO2-based Resistive Random Access Memory

2013 ◽  
Vol 533 ◽  
pp. 19-23 ◽  
Author(s):  
T. Cabout ◽  
J. Buckley ◽  
C. Cagli ◽  
V. Jousseaume ◽  
J.-F. Nodin ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Resistance Switching ◽  
Access Memory ◽  
Pt Electrodes

Role of point defects in hybrid phase TiO2 for resistive random-access memory (RRAM)

2019 ◽  
Vol 6 (7) ◽  
pp. 076311 ◽  
Author(s):  
Muhammad Sultan Irshad ◽  
Adil Abbas ◽  
Hummad Habib Qazi ◽  
M Hammad Aziz ◽  
Matiullah Shah ◽  
...  
Keyword(s):  
Point Defects ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory

Effect of Conductive Filament Temperature on ZrO2 based Resistive Random Access Memory Devices

2020 ◽  
Vol 12 (2) ◽  
pp. 02008-1-02008-4
Author(s):  
Pramod J. Patil ◽  
◽  
Namita A. Ahir ◽  
Suhas Yadav ◽  
Chetan C. Revadekar ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Conductive Filament ◽  
Filament Temperature

scholarly journals Improved Device Distribution in High-Performance SiNx Resistive Random Access Memory via Arsenic Ion Implantation

Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1401
Author(s):  
Te Jui Yen ◽  
Albert Chin ◽  
Vladimir Gritsenko
Keyword(s):  
High Performance ◽  
Conduction Mechanism ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Switching Behavior ◽  
Access Memory ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Limited Conduction

Large device variation is a fundamental challenge for resistive random access memory (RRAM) array circuit. Improved device-to-device distributions of set and reset voltages in a SiNx RRAM device is realized via arsenic ion (As+) implantation. Besides, the As+-implanted SiNx RRAM device exhibits much tighter cycle-to-cycle distribution than the nonimplanted device. The As+-implanted SiNx device further exhibits excellent performance, which shows high stability and a large 1.73 × 103 resistance window at 85 °C retention for 104 s, and a large 103 resistance window after 105 cycles of the pulsed endurance test. The current–voltage characteristics of high- and low-resistance states were both analyzed as space-charge-limited conduction mechanism. From the simulated defect distribution in the SiNx layer, a microscopic model was established, and the formation and rupture of defect-conductive paths were proposed for the resistance switching behavior. Therefore, the reason for such high device performance can be attributed to the sufficient defects created by As+ implantation that leads to low forming and operation power.

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