scholarly journals Role of Ti and Pt electrodes on resistance switching variability of HfO2-based Resistive Random Access Memory

2013 ◽  
Vol 533 ◽  
pp. 19-23 ◽  
Author(s):  
T. Cabout ◽  
J. Buckley ◽  
C. Cagli ◽  
V. Jousseaume ◽  
J.-F. Nodin ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Resistance Switching ◽  
Access Memory ◽  
Pt Electrodes

Role of nitrogen incorporation into Al2O3-based resistive random-access memory

2014 ◽  
Vol 7 (7) ◽  
pp. 074202 ◽  
Author(s):  
Moon Young Yang ◽  
Katsumasa Kamiya ◽  
Hiroki Shirakawa ◽  
Blanka Magyari-Köpe ◽  
Yoshio Nishi ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Nitrogen Incorporation

Reliability of Atmosphere Pressure-Plasma Enhanced Chemical Vapor Deposition Deposited Indium Gallium Zinc Oxide Resistive Random Access Memory Device with Microwave Annealing

2020 ◽  
Vol 20 (7) ◽  
pp. 4057-4060
Author(s):  
Chien-Hung Wu ◽  
Song-Nian Kuo ◽  
Kow-Ming Chang ◽  
Yi-Ming Chen ◽  
Yu-Xin Zhang ◽  
...  
Keyword(s):  
Retention Time ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Thin Solid Films ◽  
Solid Films ◽  
Microwave Annealing ◽  
Annealing Conditions

Recently resistive random access memory (RRAM) is considered to be the most promising one to become the next generation memory since its simple Metal/Insulator/Metal (MIM) structure, lower power consumption and fabrication cost (Meena, J.S., et al., 2014. Overview of emerging nonvolatile memory technologies. Nanoscale Research Letters, 9(1), p.526). Due to some bottlenecks for current flash memory, such as high operation voltage, low operation speed, poor retention time and endurance, RRAM device is regarded as an alternative solution (Fuh, C.S., et al., 2011. Role of environmental and annealing conditions on the passivation-free In–Ga–Zn–O TFT. Thin Solid Films, 520, pp.1489–1494). In this investigation, the memory layer of RRAM device is IGZO, and it is deposited with AP-PECVD technique which can operate under atmosphere, reduce cost of the process. Microwave annealing (MWA) is used to enhance the RRAM device reliability (Fuh, C.S., et al., 2011. Role of environmental and annealing conditions on the passivation-free In–Ga–Zn–O TFT. Thin Solid Films, 520, pp.1489–1494). Experiment shows that with appropriate MWA treatment, the IGZO RRAM device exhibits better electrical characteristics, reliability issues such as numbers of switching cycle and data retention time are also improved (Teng, L.F., et al., 2012. Effects of microwave annealing on electrical enhancement of amorphous oxide semiconductor thin film transistor. Applied Physics Letters, 101, p.132901).

Correlation Between Oxygen Composition and Electrical Properties in NiO Thin Films for Resistive Random Access Memory

2010 ◽  
Vol 1250 ◽  
Author(s):  
Yusuke Nishi ◽  
Tatsuya Iwata ◽  
Tsunenobu Kimoto
Keyword(s):  
Thin Films ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Resistance Switching ◽  
Admittance Spectroscopy ◽  
Low Oxygen ◽  
Access Memory ◽  
Switching Operation ◽  
Defect Levels

AbstractAdmittance spectroscopy measurement has been performed on NiOx thin films with various oxygen compositions (x=1.0-1.2) in order to characterize localized defect levels. The activation energy and concentration of localized defect levels in NiOx films with low oxygen composition (x≤1.07) are 120-170 meV and lower than 2×1019 cm-3, respectively. From I-V measurement of the Pt/NiOx/Pt structures, samples with high oxygen composition (x≥1.10) did not show resistance switching operation, while samples with low oxygen composition (x≤1.07) did. The best oxygen composition of NiOx thin films turned out to be 1.07 in order to realize repeatable and stable resistance switching operation.

The role of the inserted layer in resistive random access memory device

2016 ◽  
Vol 3 (7) ◽  
pp. 076301
Author(s):  
Dainan Zhang ◽  
Guokun Ma ◽  
Huaiwu Zhang ◽  
Xiaoli Tang ◽  
Zhiyong Zhong ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Memory Device ◽  
Resistive Random Access Memory ◽  
Access Memory

Role of point defects in hybrid phase TiO2 for resistive random-access memory (RRAM)

2019 ◽  
Vol 6 (7) ◽  
pp. 076311 ◽  
Author(s):  
Muhammad Sultan Irshad ◽  
Adil Abbas ◽  
Hummad Habib Qazi ◽  
M Hammad Aziz ◽  
Matiullah Shah ◽  
...  
Keyword(s):  
Point Defects ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory

EFFECTS OF TiOx INTERLAYER ON RESISTANCE SWITCHING OF Pt/TiOx/ZnO/n+-Si STRUCTURES

2014 ◽  
Vol 21 (05) ◽  
pp. 1450061 ◽  
Author(s):  
HONGXIA LI ◽  
XIAOJUN LV ◽  
JUNHUA XI ◽  
XIN WU ◽  
QINAN MAO ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Resistance Switching ◽  
Zno Thin Film ◽  
Access Memory ◽  
Ohmic Behavior ◽  
Resistance State ◽  
Different Thickness ◽  
Limited Conduction

In this paper, we fabricated Pt / TiO x/ ZnO / n +- Si structures by inserting TiO x interlayer between Pt top electrode (TE) and ZnO thin film for non-volatile resistive random access memory (ReRAM) applications. Effects of TiO x interlayer with different thickness on the resistance switching of Pt / TiO x/ ZnO / n +- Si structures were investigated. Conduction behaviors in high and low resistance state (HRS and LRS) fit well with the trap-controlled space-charge-limited conduction (SCLC) and Ohmic behavior, respectively. Variations of set and reset voltages and HRS and LRS resistances of Pt / TiO x/ ZnO / n +- Si structures were investigated as a function of TiO x thickness. Switching cycling tests were attempted to evaluate the endurance reliability of Pt / TiO x/ ZnO / n +- Si structures. Additionally, the switching mechanism was analyzed by the filament model.

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