scholarly journals Probing band-tail states in silicon metal-oxide-semiconductor heterostructures with electron spin resonance

2012 ◽  
Vol 100 (2) ◽  
pp. 023503 ◽  
Author(s):  
R. M. Jock ◽  
S. Shankar ◽  
A. M. Tyryshkin ◽  
Jianhua He ◽  
K. Eng ◽  
...  
Keyword(s):  
Electron Spin Resonance ◽  
Metal Oxide ◽  
Electron Spin ◽  
Metal Oxide Semiconductor ◽  
Semiconductor Heterostructures ◽  
Oxide Semiconductor ◽  
Band Tail ◽  
Spin Resonance

Observation of Deep Level Centers in 4H and 6H Silicon Carbide Metal Oxide Semiconductor Field Effect Transistors

2005 ◽  
Vol 483-485 ◽  
pp. 593-596 ◽  
Author(s):  
David J. Meyer ◽  
Morgen S. Dautrich ◽  
Patrick M. Lenahan ◽  
Aivars J. Lelis
Keyword(s):  
Silicon Carbide ◽  
Electron Spin Resonance ◽  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Deep Level ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Spin Resonance ◽  
Trapping Centers

Utilizing an very sensitive electron spin resonance (ESR) technique, spin dependent recombination (SDR) we have identified interface and near interface trapping centers in 4H and 6H SiC/SiO2 metal oxide semiconductor field effect transistors (MOSFETs). We extend our group’s earlier observations on 6H devices to the more technologically important 4H system and find that several centers can play important roles in limiting the performance of SiC based MOSFETs.

Defect and Tail States in Microcrystalline Silicon investigated by pulsed ESR

2000 ◽  
Vol 609 ◽  
Author(s):  
P. Kanschat ◽  
H. Mell ◽  
K. Lips ◽  
W. Fuhs
Keyword(s):  
Electron Spin Resonance ◽  
Detailed Analysis ◽  
Electron Spin ◽  
Qualitative Model ◽  
Dangling Bond ◽  
Microcrystalline Silicon ◽  
Band Tail ◽  
Spin Resonance ◽  
Donor States ◽  
Broad Structure

ABSTRACTWe report on a detailed analysis of paramagnetic states in a doping series of microcrystalline silicon, μc-Si:H, by pulsed electron spin resonance. We identify two dangling bond like structures at g = 2.0052 (db1) and g = 2.0043 (db2). Whereas db1 is evenly distributed in the gap, the db2 state is found to be localized in the lower part of the gap. The CE resonance at g ≈ 1.998 is assigned to electrons in conduction band tail states. In p-doped samples, we observe a broad structure CH at g ≈ 2.08 which we identify with holes trapped in valence band tail states. It is shown that the CH state behaves very similar on illumination as the CE resonance. In n-type samples a pair of hyperfine split lines (A ≈ 11 mT) is found which apparently does not originate from 31P-donor states. On the basis of our results we propose a qualitative model for paramagnetic states in μc-Si:H.

scholarly journals Micron thick Gd2O3 films for GaN/AlGaN metal–oxide–semiconductor heterostructures

2015 ◽  
Vol 589 ◽  
pp. 194-198 ◽  
Author(s):  
Daniel A. Grave ◽  
Joshua A. Robinson ◽  
Douglas E. Wolfe
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Semiconductor Heterostructures ◽  
Oxide Semiconductor
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