Growth and electrical properties of in situ phosphorus-doped polycrystalline silicon films using Si3H8 and PH3

2014 ◽  
Vol 32 (3) ◽  
pp. 031510 ◽  
Author(s):  
Byongju Kim ◽  
Hyunchul Jang ◽  
Sun-Wook Kim ◽  
Dae-Seop Byeon ◽  
Sangmo Koo ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Polycrystalline Silicon Films ◽  
Phosphorus Doped

Piezoresistive Properties of Boron-Doped PECVD Micro- and Polycrystalline Silicon films

1994 ◽  
Vol 343 ◽  
Author(s):  
M. Le Berre ◽  
M. Lemiti ◽  
D. Barbier ◽  
P. Pinard ◽  
J. Cali ◽  
...  
Keyword(s):  
Polycrystalline Silicon ◽  
Grazing Angle ◽  
Amorphous State ◽  
Silicon Films ◽  
Gauge Factor ◽  
X Ray Diffraction ◽  
Boron Doped ◽  
Polycrystalline Silicon Films ◽  
Oriented Material

ABSTRACTThe electrical and piezoresistive properties of in-situ doped PECVD silicon films deposited on oxided silicon wafers have been investigated. One series of films was deposited in the so-called microcrystalline state at 450°C. The other set of samples was deposited in the amorphous state at 320°C and subjected to rapid thermal annealing. Structural properties (grain size, texture, residual stress) were evaluated experimentally through TEM and grazing angle X ray diffraction and related to the measured gauge factor. A maximum longitudinal gauge factor of 28 is measured in the case of advantageously textured microcrystalline material, the magnitude of the gauge factor decreasing sharply for randomly oriented material. For the amorphous deposited and subsequently annealed material, the longitudinal gauge factor is in the range 22–27 depending on dopant concentration. These experimental features are compared to the results of a theoretical approach of piezoresistance in polysilicon. We derive various expressions of the gauge factor according to the assumptions of either constant stress or constant strain within the aggregate. In the case of untextured films, analytical Voigt-Reuss-Hill averages for the elements of piezoresistive and elastoresistive tensors lead to greatly simplified expressions. Theoretical estimates are shown to be in reasonable agreement with the experimental measurements. This confirms the great potential of PECVD microcrystalline and polycrystalline silicon for strain gauges.

Properties of in Situ Doped Polycrystalline Silicon Films Deposited from Phosphine and Disilane

1990 ◽  
Vol 182 ◽  
Author(s):  
Lynnetie D. Madsen ◽  
Louise Weaver
Keyword(s):  
Polycrystalline Silicon ◽  
Silicon Oxide ◽  
Silicon Films ◽  
Thickness Variation ◽  
Capping Layer ◽  
Temperature Ranges ◽  
Free Films ◽  
Polycrystalline Silicon Films ◽  
20 Nm

AbstractThe deposition of in situ phosphorus doped silicon films was performed using disilane (Si2H6) instead of monosilane (SiH4) as the silicon source gas. The negative aspects of in situ doping with phosphine, namely low deposition rates and poor across wafer uniformity, were to a large extent eliminated. Haze-free polycrystalline films were deposited at ∼60 Å-min1 with less than 5% radial thickness variation over a 100 mm wafer. However, the temperature suitable for depositing films using Si2H6 was shifted downward from that used for SiH4 and similarly, the conditions for good quality (haze-free)films were adjusted. Within specific temperature ranges, varying the gas pressure, flow,and Si2H6 to PH3 ratio resulted in the formation of oneof three types of haze. The films produced had unusually low resistivities of ∼770 μohm-cm after furnace annealing at 850ºC for 1800s. A 20 nm thick surface layer of amorphous silicon oxide was revealed during transmission electron microscopy (TEM) examination of annealed films. Although this oxide layer was undoped, the phosphorus gradient, measured by energy dispersive x-ray analysis (EDX) and secondary ion mass spectroscopy (SIMS), increased towards the surface of the polycrystalline film, suggesting that dopant was diffusing to the surface. A matrix involving different annealing and capping layers was conducted to investigate this phenomenon further. Extremely large grains resulted when a capping layer of SiO2 was deposited prior to rapid thermalannealing (RTA). An autodoping effect was observed when another capping layer, such as undoped polycrystalline silicon, was used.

Resistivity of phosphorus-doped sputter-deposited polycrystalline silicon films

1977 ◽  
Vol 20 (11) ◽  
pp. 925-930 ◽  
Author(s):  
Edgardo Gabilli ◽  
Sergio Guerri ◽  
Guido Masetti ◽  
Maurizio Severi
Keyword(s):  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Sputter Deposited ◽  
Polycrystalline Silicon Films ◽  
Phosphorus Doped
Sign in / Sign up

Export Citation Format

Share Document