Comparative study of atomic layer deposition and low-pressure MOCVD of copper sulfide thin films

2001 ◽  
Vol 11 (PR3) ◽  
pp. Pr3-1147-Pr3-1152 ◽  
Author(s):  
B. Meester ◽  
L. Reijnen ◽  
A. Goossens ◽  
J. Schoonman
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Comparative Study ◽  
Copper Sulfide ◽  
Atomic Layer ◽  
Low Pressure ◽  
Layer Deposition ◽  
Low Pressure Mocvd

Atomic layer deposition of copper sulfide thin films

2016 ◽  
Vol 600 ◽  
pp. 103-108 ◽  
Author(s):  
Nathanaelle Schneider ◽  
Daniel Lincot ◽  
Frédérique Donsanti
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Copper Sulfide ◽  
Atomic Layer ◽  
Layer Deposition

scholarly journals Guidance of growth mode and structural character in organic–inorganic hybrid materials – a comparative study

2014 ◽  
Vol 43 (9) ◽  
pp. 3492-3500 ◽  
Author(s):  
K. B. Klepper ◽  
O. Nilsen ◽  
S. Francis ◽  
H. Fjellvåg
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Comparative Study ◽  
Hybrid Materials ◽  
Atomic Layer ◽  
Organic Ligands ◽  
Film Properties ◽  
Inorganic Hybrid ◽  
Layer Deposition ◽  
Hybrid Thin Films

We investigated the influence of the functionality of organic ligands on film properties in organic–inorganic hybrid thin films deposited by atomic layer deposition.

scholarly journals A Comparative Study on the Precursors for the Atomic Layer Deposition of Silicon Nitride Thin Films

2004 ◽  
Vol 14 (2) ◽  
pp. 141-145
Author(s):  
Won-Jun Lee ◽  
Joo-Hyeon Lee ◽  
Yeon-Seong Lee ◽  
Sa-Kyun Rha ◽  
Chong-Ook Park
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Atomic Layer Deposition ◽  
Comparative Study ◽  
Atomic Layer ◽  
Layer Deposition

A comparative study on lanthanide oxide thin films grown by atomic layer deposition

2005 ◽  
Vol 472 (1-2) ◽  
pp. 275-281 ◽  
Author(s):  
Jani Päiväsaari ◽  
Matti Putkonen ◽  
Lauri Niinistö
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Comparative Study ◽  
Atomic Layer ◽  
Oxide Thin Films ◽  
Lanthanide Oxide ◽  
Layer Deposition

Structural, optical, and electronic stability of copper sulfide thin films grown by atomic layer deposition

2013 ◽  
Vol 6 (6) ◽  
pp. 1868 ◽  
Author(s):  
Alex B. F. Martinson ◽  
Shannon C. Riha ◽  
Elijah Thimsen ◽  
Jeffrey W. Elam ◽  
Michael J. Pellin
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Copper Sulfide ◽  
Atomic Layer ◽  
Layer Deposition

Growth of conductive copper sulfide thin films by atomic layer deposition

2002 ◽  
Vol 12 (4) ◽  
pp. 1022-1026 ◽  
Author(s):  
Johanna Johansson ◽  
Juhana Kostamo ◽  
Maarit Karppinen ◽  
Lauri Niinistö
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Copper Sulfide ◽  
Atomic Layer ◽  
Layer Deposition

Depositing High-Performance Conductive Thin Films by Using Atomic Layer Deposition

2015 ◽  
Vol 764-765 ◽  
pp. 138-142 ◽  
Author(s):  
Fa Ta Tsai ◽  
Hsi Ting Hou ◽  
Ching Kong Chao ◽  
Rwei Ching Chang
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
High Performance ◽  
Atomic Layer ◽  
Electric Properties ◽  
X Ray Diffraction ◽  
Layer Deposition ◽  
Azo Thin Film ◽  
Aluminum Doped Zinc Oxide ◽  
Conductive Thin Films

This work characterizes the mechanical and opto-electric properties of Aluminum-doped zinc oxide (AZO) thin films deposited by atomic layer deposition (ALD), where various depositing temperature, 100, 125, 150, 175, and 200 °C are considered. The transmittance, microstructure, electric resistivity, adhesion, hardness, and Young’s modulus of the deposited thin films are tested by using spectrophotometer, X-ray diffraction, Hall effect analyzer, micro scratch, and nanoindentation, respectively. The results show that the AZO thin film deposited at 200 °C behaves the best electric properties, where its resistance, Carrier Concentration and mobility reach 4.3×10-4 Ωcm, 2.4×1020 cm-3, and 60.4 cm2V-1s-1, respectively. Furthermore, microstructure of the AZO films deposited by ALD is much better than those deposited by sputtering.

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