P-113: Improving the Carrier Balance with Hybrid Hole Transporting Layer and Electron Blocking Layer in Quantum Dot Light-Emitting Diodes

2018 ◽  
Vol 49 (1) ◽  
pp. 1636-1639 ◽  
Author(s):  
Dan Dong ◽  
Lu Lian ◽  
Dongxu Feng ◽  
Han Wang ◽  
Gufeng He
ACS Nano ◽  
2009 ◽  
Vol 3 (3) ◽  
pp. 737-743 ◽  
Author(s):  
Qingjiang Sun ◽  
Guru Subramanyam ◽  
Liming Dai ◽  
Michael Check ◽  
Angela Campbell ◽  
...  

2019 ◽  
Vol 39 (5) ◽  
pp. 0523003
Author(s):  
张文静 Zhang Wenjing ◽  
张芹 Zhang Qin ◽  
杨亮 Yang Liang ◽  
江莹 Jiang Ying ◽  
常春 Chang Chun ◽  
...  

RSC Advances ◽  
2019 ◽  
Vol 9 (21) ◽  
pp. 11634-11640 ◽  
Author(s):  
Hoseok Jin ◽  
Hyungseok Moon ◽  
Woosuk Lee ◽  
Hyeok Hwangbo ◽  
Sang Heon Yong ◽  
...  

We developed a 1.0 nm thick aluminum oxide (Al2O3) interlayer as an electron blocking layer to reduce leakage current and suppress exciton quenching induced by charge imbalance in inverted quantum dot light emitting diodes (QLEDs).


2021 ◽  
pp. 2100731
Author(s):  
Wenhai Wu ◽  
Zhao Chen ◽  
Yunfeng Zhan ◽  
Bochen Liu ◽  
Weidong Song ◽  
...  

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