Measurement and simulation of spreading current in interlayer dielectric film deposition by plasma-enhanced chemical vapor deposition

2011 ◽  
Vol 29 (4) ◽  
pp. 041302
Author(s):  
Noriaki Matsunaga ◽  
Hirokatsu Okumura ◽  
Butsurin Jinnai ◽  
Seiji Samukawa
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Dielectric Film ◽  
Chemical Vapor ◽  
Film Deposition ◽  
Interlayer Dielectric

Metal-organic chemical vapor deposition of ZrO2 films using Zr(thd)4 as precursors

1994 ◽  
Vol 9 (7) ◽  
pp. 1721-1727 ◽  
Author(s):  
Jie Si ◽  
Seshu B. Desu ◽  
Ching-Yi Tsai
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Film Deposition ◽  
Organic Chemical ◽  
Deposition Rates ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Deposited Films

Synthesis of zirconium tetramethylheptanedione [Zr(thd)4] was optimized. Purity of Zr(thd)4 was confirmed by melting point determination, carbon, and hydrogen elemental analysis and proton nuclear magnetic resonance spectrometer (NMR). By using Zr(thd)4, excellent quality ZrO2 thin films were successfully deposited on single-crystal silicon wafers by metal-organic chemical vapor deposition (MOCVD) at reduced pressures. For substrate temperatures below 530 °C, the film deposition rates were very small (⋚1 nm/min). The film deposition rates were significantly affected by (i) source temperature, (ii) substrate temperature, and (iii) total pressure. As-deposited films are carbon free. Furthermore, only the tetragonal ZrO2 phase was identified in as-deposited films. The tetragonal phase transformed progressively into the monoclinic phase as the films were subjected to a high-temperature post-deposition annealing. The optical properties of the ZrO2 thin films as a function of wavelength, in the range of 200 nm to 2000 nm, were also reported. In addition, a simplified theoretical model which considers only a surface reaction was used to analyze the deposition of ZrO2 films. The model predicated the deposition rates well for various conditions in the hot wall reactor.

Flexible and Transparent Dielectric Film with a High Dielectric Constant Using Chemical Vapor Deposition-Grown Graphene Interlayer

ACS Nano ◽  
2013 ◽  
Vol 8 (1) ◽  
pp. 269-274 ◽  
Author(s):  
Jin-Young Kim ◽  
Jongho Lee ◽  
Wi Hyoung Lee ◽  
Iskandar N. Kholmanov ◽  
Ji Won Suk ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Dielectric Constant ◽  
Dielectric Film ◽  
Chemical Vapor ◽  
Transparent Dielectric ◽  
Grown Graphene ◽  
High Dielectric

Bonding of Hydrogen and Deuterium in Silicon Nitride Films Prepared by Remote Plasma Enhanced Chemical Vapor Deposition

1995 ◽  
Vol 377 ◽  
Author(s):  
G. Stevens ◽  
P. Santos-Filho ◽  
S. Habermehl ◽  
G. Lucovsky
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Reaction Pathway ◽  
Total Concentration ◽  
Chemical Vapor ◽  
Reaction Model ◽  
Film Deposition ◽  
Growth Surface ◽  
Remote Plasma ◽  
Silicon Nitride Films

ABSTRACTWe have deposited Si-nitride thin films by remote plasma-enhanced chemical-vapor deposition using different combinations of hydrogen and deuterium source gases. In one set of experiments, NH3 and SiH4 were injected downstream from a He plasma and the ratio of NH3 to SiH4 was adjusted so that deposited films contained IR-detectable bonded-H in SiN-H arrangements, but not in Si-H arrangements. Similar results were obtained using the same ND3 to SiD4 flow ratio; these films contained only SiN-D groups. However, films prepared from ND3 and SiH4 displayed both SiN-D and SiN-H groups in essentially equal concentrations establishing that H and D atoms bonded to N are derived from both source gases SiH (D) 4 and NH (D) 3, and further that inter-mixing of H and/or D atoms occurs at the growth surface. This reaction pathway is supported by additional studies in which films were grown from SD4 and ND3 with either i) He or ii) He/H2 mixtures being plasma excited. The films grown from the deuterated source gases without H2, displayed only SiN-D bands, whereas the films grown using the He/H2 mixture displayed both SiN-H and SiN-D bands. The total concentration of N-H and N-D bonds in the films grown from the He/H2 excitation was the same as the concentration of N-D, supporting the surface reaction model. In-situ mass spectrometry provides additional insights in the film deposition reactions.

Effects of Fe film Thickness and Ammonia on the Growth Behavior of Carbon Nanotubes grown by thermal Chemical Vapor Deposition

2001 ◽  
Vol 706 ◽  
Author(s):  
Jung Inn Sohn ◽  
Chel-Jong Choi ◽  
Tae-Yeon Seong ◽  
Seonghoon Lee
Keyword(s):  
Electron Microscopy ◽  
Carbon Nanotubes ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Surface Region ◽  
Film Deposition ◽  
Condition Dependence ◽  
Pretreatment Condition ◽  
Thermal Chemical Vapor Deposition

AbstractThe growth behaviour of carbon nanotubes on the Fe-deposited Si (001) substrates by thermal chemical vapor deposition (CVD) has been investigated using transmission electron microscopy (TEM), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The Fe films are deposited for 20 s–20 min by pulse-laser deposition. SEM results show that the growth characteristics of carbon nanotubes strongly depend on the Fe film deposition time. TEM and SEM results show that the pretreatment annealing at 800 °C causes the continuous Fe films to be broken up into nanoparticles 8–50 nm across and discontinuous islands 100 nm– 1.1 μm in size. It is shown that the Fe nanoparticles are essentially required for the formation of aligned carbon nanotubes. SEM results show that the growth behaviors of carbon nanotubes are strongly dependent on the pretreatment atmospheres. In addition, for the Ar gas-pretreated sample, a carbonaceous layer is formed near the surface region. TEM results show direct evidence that a base growth mode is responsible for the growth of carbon nanotubes in the present work. Based on the microscopy results, the pretreatment condition dependence of the growth behaviors of carbon nanotubes is discussed.

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