A low dielectric film obtained by polymerization of Tetramethyldisiloxane using a Remote Plasma Enhanced Chemical Vapor Deposition (RPECVD) process.

2000 ◽  
Author(s):  
E. Vestiel ◽  
J. Vindevoghel ◽  
D. Glay ◽  
C. Jama ◽  
O. Dessaux ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Dielectric Film ◽  
Chemical Vapor ◽  
Remote Plasma ◽  
Low Dielectric

Heteroepitaxial Nucleation and Growth of Ge ON Si(100) Surfaces Using Remote Plasma Enhanced Chemical Vapor Deposition

1988 ◽  
Vol 116 ◽  
Author(s):  
R.A. Rudder ◽  
S.V. Hattangady ◽  
D.J. Vitkavage ◽  
R.J. Markunas
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Three Dimensional ◽  
Chemical Vapor ◽  
Layer By Layer ◽  
Heteroepitaxial Growth ◽  
Remote Plasma ◽  
Dimensional Growth ◽  
Diffraction Patterns

Heteroepitaxial growth of Ge on Si(100) has been accomplished using remote plasma enhanced chemical vapor deposition at 300*#x00B0;C. Reconstructed surfaces with diffraction patterns showing non-uniform intensity variations along the lengths of the integral order streaks are observed during the first 100 Å of deposit. This observation of an atomically rough surface during the initial stages of growth is an indication of three-dimensional growth. As the epitaxial growth proceeds, the diffraction patterns become uniform with extensive streaking on both the integral and fractional order streaks. Subsequent growth, therefore, takes place in a layer-by-layer, two-dimensional mode. X-ray photoelectron spectroscopy of the early nucleation stages, less than 80 Å, show that there is uniform coverage with no evidence of island formation.

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