Field-plate design for edge termination in silicon carbide high-power Schottky diodes

2011 ◽  
Vol 29 (2) ◽  
pp. 021021 ◽  
Author(s):  
S. Noor Mohammad ◽  
Francis J. Kub ◽  
Charles R. Eddy
Keyword(s):  
Silicon Carbide ◽  
High Power ◽  
Schottky Diodes ◽  
Field Plate ◽  
Edge Termination ◽  
Plate Design

A Study of Oxide Etch Angle of Edge Termination Field Plate for Fabrication of SiC SBD

2017 ◽  
Vol 730 ◽  
pp. 102-105
Author(s):  
Ey Goo Kang
Keyword(s):  
Thermal Conductivity ◽  
Silicon Carbide ◽  
Breakdown Voltage ◽  
Dielectric Breakdown ◽  
Power Semiconductor ◽  
Field Plate ◽  
Edge Termination ◽  
Power Semiconductor Devices ◽  
Silicon Materials ◽  
Generation Power

The silicon carbide (SiC) material is being spotlighted as a next-generation power semiconductor material due to the characteristic limitations of the existing silicon materials. SiC has a wider band gap, higher breakdown voltage, higher thermal conductivity, and higher saturation electron mobility than Si. However, actual SiC SBDs exhibit a lower dielectric breakdown voltage than the theoretical breakdown voltage that causes the electric field concentration, a phenomenon that occurs on the edge of the contact surface as in the conventional power semiconductor devices. In this paper, we designed an edge termination structure using a field plate structure through oxide etch angle control, and optimized the structure to obtain a high breakdown voltage. The experiment results indicated that oxide etch angle was 45° when the breakdown voltage characteristics of the SiC SBD were optimized and a breakdown voltage of 681V was obtained.

Design rules for field plate edge termination in SiC Schottky diodes

2001 ◽  
Vol 48 (12) ◽  
pp. 2659-2664 ◽  
Author(s):  
M.C. Tarplee ◽  
V.P. Madangarli ◽  
Quinchun Zhang ◽  
T.S. Sudarshan
Keyword(s):  
Schottky Diodes ◽  
Plate Edge ◽  
Design Rules ◽  
Field Plate ◽  
Edge Termination

High Voltage Silicon Carbide Devices

1998 ◽  
Vol 512 ◽  
Author(s):  
B. Jayant Baliga
Keyword(s):  
Silicon Carbide ◽  
Breakdown Voltage ◽  
High Voltage ◽  
Impact Ionization ◽  
Voltage Drop ◽  
Schottky Diodes ◽  
Inversion Layer ◽  
Drift Region ◽  
Edge Termination ◽  
Silicon Devices

ABSTRACTProgress made in the development of high performance power rectifiers and switches from silicon carbide are reviewed with emphasis on approaching the 100-fold reduction in the specific on-resistance of the drift region when compared with silicon devices with the same breakdown voltage. The highlights are: (a) Recently completed measurements of impact ionization coefficients in SiC indicate an even higher Baliga's figure of merit than projected earlier. (b) The commonly reported negative temperature co-efficient for breakdown voltage in SiC devices has been shown to arise at defects, allaying concerns that this may be intrinsic to the material. (c) Based upon fundamental considerations, it has been found that Schottky rectifiers offer superior on-state voltage drop than P-i-N rectifiers for reverse blocking voltages below 3000 volts. (d) Nearly ideal breakdown voltage has been experimentally obtained for Schottky diodes using an argon implanted edge termination. (e) Planar ion-implanted junctions have been successfully fabricated using oxide as a mask with high breakdown voltage and low leakage currents by using a filed plate edge termination. (f) High inversion layer mobility has been experimentally demonstrated on both 6H and 4H-SiC by using a deposited oxide layer as gate dielectric. (g) A novel, high-voltage, normally-off, accumulation-channel, MOSFET has been proposed and demonstrated with 50x lower specific on-resistance than silicon devices in spite of using logic-level gate drive voltages. These results indicate that SiC based power devices could become commercially viable in the 21st century if cost barriers can be overcome.

Lateral Current Spreading in SiC Schottky Diodes using Field-Plate Edge Termination

2000 ◽  
Vol 338-342 ◽  
pp. 1223-1226 ◽  
Author(s):  
Q. Zhang ◽  
V. Madangarli ◽  
M. Tarplee ◽  
Tangali S. Sudarshan
Keyword(s):  
Schottky Diodes ◽  
Plate Edge ◽  
Current Spreading ◽  
Field Plate ◽  
Edge Termination ◽  
Lateral Current

Simulation research on offset field-plate used as edge termination in 4H–SiC merged PiN-Schottky diodes

2010 ◽  
Vol 19 (4) ◽  
pp. 047305 ◽  
Author(s):  
Chen Feng-Ping ◽  
Zhang Yu-Ming ◽  
Zhang Yi-Men ◽  
Lü Hong-Liang ◽  
Song Qing-Wen
Keyword(s):  
Schottky Diodes ◽  
Simulation Research ◽  
Field Plate ◽  
Edge Termination
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