Plasma etching of polydimethylsiloxane: Effects from process gas composition and dc self-bias voltage

2011 ◽  
Vol 29 (1) ◽  
pp. 011001 ◽  
Author(s):  
Geir Bjørnsen ◽  
Jaan Roots
Keyword(s):  
Bias Voltage ◽  
Plasma Etching ◽  
Gas Composition ◽  
Process Gas ◽  
Self Bias

Estimation of Ion Impact Energies and Electrode Self-Bias Voltage in Capacitive RF Discharges

1987 ◽  
Vol 98 ◽  
Author(s):  
S. E. Savas
Keyword(s):  
Bias Voltage ◽  
Capacitively Coupled ◽  
Ion Flow ◽  
Rf Discharges ◽  
Self Bias ◽  
Ion Energies ◽  
Bias Ratio ◽  
Ionization Model ◽  
Ion Impact ◽  
Impact Energies

ABSTRACTThe dependences of the electrode self-bias voltage and the ratio of ion energies on electrode area ratio are calculated for a model of capacitively coupled rf discharges. It is assumed that concentric spherical elecrodes with fluid-like radial ion flow adequately models the ion motion, that sheath impedances are dominant, and that ionization processes in the glow are due to ohmically heated electrons. Results show that the ratio of ion energies impacting the smaller electrode to those on the larger depends on the ratio of electrode areas in a more complex manner than a power law.The reason for this is that sheath impedances are more resistive or capacitive at different times in the rf cycle. The self-bias ratio is found to depend relatively little on the ionization model or the pressure but differs substantially from the “power law” result. The agreement of measurements with the model is fairly good.

Methods of Improving Glow-Discharge-Deposited a-Si1−xGex:H

1991 ◽  
Vol 219 ◽  
Author(s):  
Y. S. Tsuo ◽  
Y. Xu ◽  
E. A. Ramsay ◽  
R. S. Crandall ◽  
S. J. Salomon ◽  
...  
Keyword(s):  
Material Processing ◽  
Glow Discharge ◽  
Substrate Temperature ◽  
Gas Mixtures ◽  
Gas Composition ◽  
Processing Methods ◽  
Helium 4 ◽  
Process Gas

ABSTRACTWe have studied methods of improving glow-discharge-deposited a-Si1−x Gex :H alloys deposited using silane and germane gas mixtures. Material processing methods studied include (1) varying the substrate temperature from 170° to 280°C, (2) varying the process gas composition and pressure, (3) dilution of the feed gas by hydrogen, argon, or helium, (4) enhancing etching during deposition by adding small amounts of XeF2 vapor into the process gas, and (5) postdeposition annealing and/or hydrogenation.

Semiconductor Optoelectronic Device Fabrication Using Dry Etching

1988 ◽  
Vol 144 ◽  
Author(s):  
Adam J. Carter ◽  
Ben Thomas ◽  
David V. Morgan ◽  
Jyoti K. Bhardwaj
Keyword(s):  
Surface Roughness ◽  
Plasma Etching ◽  
Surface Characteristics ◽  
Optoelectronic Device ◽  
Dry Etching ◽  
Device Fabrication ◽  
Material Composition ◽  
Process Gas ◽  
Etched Surface

ABSTRACTPlasma etching of GaAs and InP using a CH4/H2 process gas and AlxGa1−xAs using a SiCl4 plasma are reported. Particular attention to etching characteristics as a function of gas and material composition, r.f. power, pressure and temperature are shown. Etching of GaAs and InP highlight two separate etching mechanisms. Surface roughness data at the etched surface is presented and Cl and CH4/H2 process chemistries are compared which shows the latter to yield significant improvements in etch surface characteristics.

scholarly journals Redefinition of the self-bias voltage in a dielectrically shielded thin sheath RF discharge

2018 ◽  
Vol 123 (19) ◽  
pp. 193301 ◽  
Author(s):  
Teck Seng Ho ◽  
Christine Charles ◽  
Rod Boswell
Keyword(s):  
Bias Voltage ◽  
The Self ◽  
Rf Discharge ◽  
Self Bias

scholarly journals Influence of the Active Screen Plasma Power during Afterglow Nitrocarburizing on the Surface Modification of AISI 316L

Coatings ◽  
2020 ◽  
Vol 10 (11) ◽  
pp. 1112
Author(s):  
Jan Böcker ◽  
Alexander Puth ◽  
Anke Dalke ◽  
Jürgen Röpcke ◽  
Jean-Pierre H. van Helden ◽  
...  
Keyword(s):  
Surface Modification ◽  
Surface Hardness ◽  
Additional Parameter ◽  
Gas Composition ◽  
Aisi 316L ◽  
Bias Power ◽  
Process Gas ◽  
316L Steel ◽  
Plasma Nitrocarburizing ◽  
Active Screen

Active screen plasma nitrocarburizing (ASPNC) increases the surface hardness and lifetime of austenitic stainless steel without deteriorating its corrosion resistance. Using an active screen made of carbon opens up new technological possibilities that have not been exploited to date. In this study, the effect of screen power variation without bias application on resulting concentrations of process gas species and surface modification of AISI 316L steel was studied. The concentrations of gas species (e.g., HCN, NH3, CH4, C2H2) were measured as functions of the active screen power and the feed gas composition at constant temperature using in situ infrared laser absorption spectroscopy. At constant precursor gas composition, the decrease in active screen power led to a decrease in both the concentrations of the detected molecules and the diffusion depths of nitrogen and carbon. Depending on the gas mixture, a threshold of the active screen power was found above which no changes in the expanded austenite layer thickness were measured. The use of a heating independent of the screen power offers an additional parameter for optimizing the ASPNC process in addition to changes in the feed gas composition and the bias power. In this way, an advanced process control can be established.

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