Effect of gas composition and bias voltage on the structure and properties of a‐C:H/SiO2 nanocomposite thin films prepared by plasma‐enhanced chemical‐vapor deposition

1996 ◽  
Vol 14 (5) ◽  
pp. 2702-2708 ◽  
Author(s):  
Jung H. Lee ◽  
Young H. Lee ◽  
Bakhtier Farouk
2009 ◽  
Vol 74 ◽  
pp. 269-272 ◽  
Author(s):  
Pijus Kundu ◽  
A. Ray Chaudhuri ◽  
S. Das ◽  
T.K. Bhattacharyya

In this paper, the etching characteristic of diamond like nanocomposite thin films materials in hydrazine has been reported. The experiments have been carried out to explore the compatibility of hydrazine as a propellant with silicon based microthruster. In the reported work, 2″ N-type (100) silicon wafer with 4-6 Ω cm resistivity were used as base material. Diamond-like nanocomposite (DLN) films are deposited on silicon substrate by plasma enhanced chemical vapor deposition (PECVD) process using siloxane or silazane based precursors or their combinations. Thickness of deposited DLN thin films is around 1 µm. DLN samples are treated in 98% hydrazine at 25 °C, 70 °C and 90 °C for different time and etch rates and subsequently the change in refractive index of the DLN films if any has been measured.


Author(s):  
Sungwon S. Kim ◽  
Timothy S. Fisher

Plasma-enhanced chemical vapor deposition (PECVD) offers a variety of advantages in the synthesis of carbon nanotubes in that several critical synthesis parameters can be controlled independently. In the present study, the effects of reacting gas composition, catalyst film thickness and bias voltage are investigated. Carbon nanotube samples are grown in a microwave PECVD chamber on clean silicon substrates. Gas composition is varied from carbon-rich to carbon-lean by controlling the methane flow rate. The results indicate that gas-phase composition profoundly affects the synthesized material, which is shown to be randomly oriented nanotube mats for moderate-to-rich gas mixtures and non-tubular carbon for very lean mixtures. The non-tubular content is shown to contain disordered and graphitic bonding by Raman spectrometry. Vertically aligned nanostructures are obtained under the presence of bias voltage.


Sign in / Sign up

Export Citation Format

Share Document