Semiconductor Optoelectronic Device Fabrication Using Dry Etching
Keyword(s):
ABSTRACTPlasma etching of GaAs and InP using a CH4/H2 process gas and AlxGa1−xAs using a SiCl4 plasma are reported. Particular attention to etching characteristics as a function of gas and material composition, r.f. power, pressure and temperature are shown. Etching of GaAs and InP highlight two separate etching mechanisms. Surface roughness data at the etched surface is presented and Cl and CH4/H2 process chemistries are compared which shows the latter to yield significant improvements in etch surface characteristics.
1990 ◽
Vol 48
(4)
◽
pp. 566-567
2020 ◽
pp. 095440622097826
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2022 ◽
Keyword(s):
2013 ◽
Vol 49
(1)
◽
pp. 78-82
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