Integration of block copolymer directed assembly with 193 immersion lithography

2010 ◽  
Vol 28 (6) ◽  
pp. C6B30-C6B34 ◽  
Author(s):  
Chi-Chun Liu ◽  
Paul F. Nealey ◽  
Alex K. Raub ◽  
Philip J. Hakeem ◽  
Steve R. J. Brueck ◽  
...  
Keyword(s):  
Block Copolymer ◽  
Directed Assembly ◽  
Immersion Lithography

Bending Soft Block Copolymer Nanostructures by Lithographically Directed Assembly

2006 ◽  
Vol 39 (7) ◽  
pp. 2435-2437 ◽  
Author(s):  
Gregg M. Wilmes ◽  
David A. Durkee ◽  
Nitash P. Balsara ◽  
J. Alexander Liddle
Keyword(s):  
Block Copolymer ◽  
Directed Assembly

Directed Assembly of Nanoparticles in Block Copolymer Thin Films: Role of Defects

2010 ◽  
Vol 43 (24) ◽  
pp. 10452-10456 ◽  
Author(s):  
Jenny Kim ◽  
Peter F. Green
Keyword(s):  
Thin Films ◽  
Block Copolymer ◽  
Directed Assembly

scholarly journals Beyond native block copolymer morphologies

2017 ◽  
Vol 2 (5) ◽  
pp. 518-538 ◽  
Author(s):  
Gregory S. Doerk ◽  
Kevin G. Yager
Keyword(s):  
Phase Diagram ◽  
Block Copolymer ◽  
Block Copolymers ◽  
Molecular Design ◽  
Equilibrium Phase ◽  
Directed Assembly ◽  
Equilibrium Phase Diagram

Block copolymers self-assemble into a range of canonical morphologies. Here, we review a broad range of techniques for inducing these materials to form structures beyond the ‘native’ morphologies seen in the bulk equilibrium phase diagram. Methods that exploit intrinsic encoding (molecular design) and external enforcement (directed assembly) are compared.

Degree of Perfection and Pattern Uniformity in the Directed Assembly of Cylinder-Forming Block Copolymer on Chemically Patterned Surfaces

2011 ◽  
Vol 45 (1) ◽  
pp. 159-164 ◽  
Author(s):  
Huiman Kang ◽  
Gordon S. W. Craig ◽  
Eungnak Han ◽  
Padma Gopalan ◽  
Paul F. Nealey
Keyword(s):  
Block Copolymer ◽  
Directed Assembly ◽  
Patterned Surfaces ◽  
Chemically Patterned Surfaces

scholarly journals The One-Pot Directed Assembly of Cylinder-Forming Block Copolymer on Adjacent Chemical Patterns for Bimodal Patterning

2017 ◽  
Vol 38 (18) ◽  
pp. 1700285 ◽  
Author(s):  
Tzu-Hsuan Chang ◽  
Shisheng Xiong ◽  
Chi-Chun Liu ◽  
Dong Liu ◽  
Paul F. Nealey ◽  
...  
Keyword(s):  
Block Copolymer ◽  
Directed Assembly ◽  
One Pot ◽  
The One

Practical implementation of order parameter calculation for directed assembly of block copolymer thin films

2010 ◽  
Vol 48 (24) ◽  
pp. 2589-2603 ◽  
Author(s):  
Chi-Chun Liu ◽  
Gordon S. W. Craig ◽  
Huiman Kang ◽  
Ricardo Ruiz ◽  
Paul F. Nealey ◽  
...  
Keyword(s):  
Thin Films ◽  
Block Copolymer ◽  
Order Parameter ◽  
Directed Assembly ◽  
Practical Implementation ◽  
Parameter Calculation

Directed self-assembly lithography for half-pitch sub-15 nm pattern fabrication process

2015 ◽  
Vol 1750 ◽  
Author(s):  
Hironobu Sato ◽  
Yuriko Seino ◽  
Naoko Kihara ◽  
Yusuke Kasahara ◽  
Katsutoshi Kobayashi ◽  
...  
Keyword(s):  
Block Copolymer ◽  
Methyl Methacrylate ◽  
Self Assembly ◽  
Critical Dimension ◽  
Fabrication Process ◽  
Fabrication Method ◽  
3 Dimensional ◽  
Immersion Lithography ◽  
Surface Work ◽  
Methacrylate Copolymer

ABSTRACTThis paper introduces a fabrication method to achieve sub-15 nm line-and-space (L/S) patterns by combining grapho- and chemo-epitaxy using poly(styrene-block-methyl methacrylate) copolymer (PS-b-PMMA). The fabrication method is simple, since it eliminates photoresist stripping and also does not require any special materials to form pinning patterns. In this process, the ridges formed on spin-on-glass (SOG) surface work as physical guides and the photoresists on them are utilized as a pinning layer. Fine PS-b-PMMA L/S patterns were obtained in sufficient critical dimension (CD) range of the guide patterns that corresponded to the 15% dose margin using ArF immersion lithography. 3-dimensional grid defects were found to be the origin of the short defects. The half-pitch (hp) 15 nm L/S patterns were transferred successfully to SOG/spin-on-carbon (SOC) stacked substrate.We also describe fabrication of sub-10 nm L/S patterns using a high-chi block copolymer (BCP).

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