Effect of growth temperature on point defect density of unintentionally doped GaN grown by metalorganic chemical vapor deposition and hydride vapor phase epitaxy
2003 ◽
Vol 250
(3-4)
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pp. 437-443
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2011 ◽
Vol 29
(3)
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pp. 030603
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1995 ◽
Vol 146
(1-4)
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pp. 533-537
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