Intensity dependence and transient dynamics of donor–acceptor pair recombination in ZnO thin films grown on (001) silicon

2003 ◽  
Vol 82 (14) ◽  
pp. 2290-2292 ◽  
Author(s):  
Bing Guo ◽  
Z. R. Qiu ◽  
K. S. Wong
Keyword(s):  
Thin Films ◽  
Transient Dynamics ◽  
Zno Thin Films ◽  
Acceptor Pair ◽  
Intensity Dependence ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

A New Deep Acceptor in Epitaxial Cubic SiC

1989 ◽  
Vol 162 ◽  
Author(s):  
J. A. Freitas ◽  
S. G. Bishop
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Excitation Intensity ◽  
Acceptor Pair ◽  
Deep Acceptor ◽  
Intensity Dependence ◽  
Pl Spectra ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

ABSTRACTThe temperature and excitation intensity dependence of photoluminescence (PL) spectra have been studied in thin films of SiC grown by chemical vapor deposition on Si (100) substrates. The low power PL spectra from all samples exhibited a donor-acceptor pair PL band which involves a previously undetected deep acceptor whose binding energy is approximately 470 meV. This deep acceptor is found in every sample studied independent of growth reactor, suggesting the possibility that this background acceptor is at least partially responsible for the high compensation observed in Hall effect studies of undoped films of cubic SiC.

Donor–acceptor pair recombination in non-stoichiometric ZnO thin films

2010 ◽  
Vol 150 (7-8) ◽  
pp. 379-382 ◽  
Author(s):  
Christof P. Dietrich ◽  
Martin Lange ◽  
Gabriele Benndorf ◽  
Holger von Wenckstern ◽  
Marius Grundmann
Keyword(s):  
Thin Films ◽  
Zno Thin Films ◽  
Acceptor Pair ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

CuIn1-xGaxSe2 Thin Films Prepared by Co-Evaporation Technique

2013 ◽  
Vol 827 ◽  
pp. 12-15
Author(s):  
Ya Fen Wu ◽  
Jiunn Chyi Lee
Keyword(s):  
Thin Films ◽  
Energy Levels ◽  
Luminescence Spectra ◽  
Photoluminescence Spectra ◽  
Acceptor Pair ◽  
Shallow Acceptor ◽  
Donor Acceptor ◽  
Evaporation Technique ◽  
Donor Acceptor Pair ◽  
Gallium Content

The optical properties of Cu-poor CuIn1-xGaxSe2 thin films with different gallium contents grown by co-evaporated technique were studied. Measurements of photoluminescence and photoreflectance were performed on the samples. The photoluminescence and photoreflectance emission peaks observed around 1.1 eV are attributed to donor-acceptor pair luminescence. These donor-acceptor pair emissions are considered to originate from relatively shallow acceptor and donor energy levels. With increasing gallium content, the emission peaks shift towards higher levels of photon energy, and the linewidths of the luminescence spectra for the samples become wider, which we attributes to the greater statistical disorder between indium and gallium. Moreover, the conversion efficiency of the CuIn1-xGaxSe2-based solar cells is obtained. The measured results coincide with the inference given by the photoluminescence spectra.

scholarly journals Time-resolved Spectroscopy of the violet luminescence of undoped AlN

2005 ◽  
Vol 10 ◽  
Author(s):  
R. Freitag ◽  
K. Thonke ◽  
R. Sauer ◽  
D. G. Ebling ◽  
L. Steinke
Keyword(s):  
Epitaxial Layers ◽  
Yellow Luminescence ◽  
Acceptor Pair ◽  
Time Resolved ◽  
Time Resolved Spectroscopy ◽  
Violet Luminescence ◽  
Donor Acceptor ◽  
Violet Band ◽  
Donor Acceptor Pair

We report on the time-resolved luminescence of the defect-related violet band from undoped AlN epitaxial layers grown on sapphire and SiC. For both measurements in photoluminescence and in cathodoluminescence a decay of algebraic nature at long times is observed. This is typical for donor-acceptor pair transitions. We compare the behavior of this band to that of the generically yellow luminescence of GaN.

The role of potential fluctuations in continuous-wave donor–acceptor pair luminescence of heavily doped materials

1999 ◽  
Vol 75 (9) ◽  
pp. 1243-1245 ◽  
Author(s):  
I. Kuskovsky ◽  
D. Li ◽  
G. F. Neumark ◽  
V. N. Bondarev ◽  
P. V. Pikhitsa
Keyword(s):  
Continuous Wave ◽  
Acceptor Pair ◽  
Potential Fluctuations ◽  
Donor Acceptor ◽  
Heavily Doped ◽  
Donor Acceptor Pair ◽  
Doped Materials

Photoassociation due to electron transfer. Exciplex formation in non-polar solvent

1971 ◽  
Vol 24 (9) ◽  
pp. 1797 ◽  
Author(s):  
RJ McDonald ◽  
BK Selinger
Keyword(s):  
Polar Solvent ◽  
Excitation Energy Transfer ◽  
Acceptor Pair ◽  
Excitation Spectra ◽  
Fluorescence Excitation ◽  
Exciplex Formation ◽  
Reversible Dissociation ◽  
Fluorescence Excitation Spectra ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

Exciplexes may be formed by exciting either partner of a given electron donor-acceptor pair. As the formation of such exciplexes is reversible, dissociation may lead to excitation energy transfer. ��� The temperature dependence of fluorescence excitation spectra has proved to be a powerful tool for exploring these systems.

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