Room temperature capacitance-voltage profile and photoluminescence for delta doped InGaAs single quantum well

2010 ◽  
Vol 28 (3) ◽  
pp. C3I6-C3I9 ◽  
Author(s):  
K.-Y. Ban ◽  
S. N. Dahal ◽  
C. B. Honsberg ◽  
L. Nataraj ◽  
S. P. Bremner ◽  
...  
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Voltage Profile ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Capacitance Voltage

Measurement of band offset of a strained‐layer single quantum well by a capacitance‐voltage technique

1993 ◽  
Vol 74 (12) ◽  
pp. 7618-7620 ◽  
Author(s):  
S. Subramanian ◽  
B. M. Arora ◽  
A. K. Srivastava ◽  
G. Fernandes ◽  
S. Banerjee
Keyword(s):  
Quantum Well ◽  
Band Offset ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Strained Layer ◽  
Capacitance Voltage

scholarly journals Synchronously wired infrared antennas for resonant single-quantum-well photodetection up to room temperature

2020 ◽  
Vol 11 (1) ◽  
Author(s):  
Hideki T. Miyazaki ◽  
Takaaki Mano ◽  
Takeshi Kasaya ◽  
Hirotaka Osato ◽  
Kazuhiro Watanabe ◽  
...  
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Single Quantum ◽  
Single Quantum Well

Low-threshold room-temperature AlGaAs/GaAs nanowire/single-quantum-well heterostructure laser

2017 ◽  
Vol 110 (6) ◽  
pp. 061104 ◽  
Author(s):  
Xin Yan ◽  
Wei Wei ◽  
Fengling Tang ◽  
Xi Wang ◽  
Luying Li ◽  
...  
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Heterostructure Laser ◽  
Gaas Nanowire ◽  
Low Threshold

scholarly journals Thermal Stability Study of Oxygen Implanted Algaas/Gaas Single Quantum Well Structures Using PhotoreflectancE

1994 ◽  
Vol 354 ◽  
Author(s):  
P J Hughes ◽  
E H Li ◽  
B L Weiss ◽  
H E Jackson ◽  
J S Roberts
Keyword(s):  
Thermal Stability ◽  
Quantum Well ◽  
Room Temperature ◽  
Low Dose ◽  
Stability Study ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structures ◽  
Annealing Conditions ◽  
Thermal Stability Of

AbstractThe effects of interdiffusion on the band structure of two MxGaUxAs/GaAs single quantum well (SQW) structures were studied using room temperature photoreflectance. Rapid thermal annealing of the SQW structures at temperatures of 800°C, 900°C and 1000°C for times up to 180 seconds resulted in limited interdiffusion. Low dose (1014 cm”2) oxygen implantation reduced the thermal stability of these structures where the extent of the interdiffusion was found to be greater for the implanted samples for identical annealing conditions.

scholarly journals Room-temperature continuous-wave vertical-cavity single-quantum-well microlaser diodes

1989 ◽  
Vol 25 (20) ◽  
pp. 1377 ◽  
Author(s):  
Y.H. Lee ◽  
J.L. Jewell ◽  
A. Scherer ◽  
S.L. McCall† ◽  
J.P. Harbison ◽  
...  
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Continuous Wave ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Vertical Cavity
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