Study of interface degradation of Hf-silicate gate dielectrics during thermal nitridation process

2009 ◽  
Vol 27 (1) ◽  
pp. 71
Author(s):  
S. Y. Son ◽  
J. H. Jang ◽  
P. Kumar ◽  
R. K. Singh ◽  
J. H. Yuh ◽  
...  
Keyword(s):  
Gate Dielectrics ◽  
Nitridation Process ◽  
Thermal Nitridation

Influence of rapid thermal nitridation process in N2O ambient on the endurance performance of FLOTOX EEPROM cells

1993 ◽  
Vol 29 (2) ◽  
pp. 242 ◽  
Author(s):  
C. Papadas ◽  
P. Mortini ◽  
G. Ghibaudo ◽  
G. Pananakakis ◽  
F. Pio ◽  
...  
Keyword(s):  
Endurance Performance ◽  
Nitridation Process ◽  
Thermal Nitridation

Properties of thin oxynitride gate dielectrics produced by thermal nitridation of silicon dioxide

1980 ◽  
Author(s):  
M.L. Naiman ◽  
F.L. Terry ◽  
J.A. Burns ◽  
J.I. Raffel ◽  
R. Aucoin
Keyword(s):  
Silicon Dioxide ◽  
Gate Dielectrics ◽  
Thermal Nitridation

(Rapid) Thermal Nitridation of SiO2 films

1989 ◽  
Vol 146 ◽  
Author(s):  
J.B. Oude Elferink ◽  
F.H.P.M. Habraken ◽  
W.F. van der Weg
Keyword(s):  
Activation Energy ◽  
Silicon Dioxide ◽  
Effective Activation Energy ◽  
Effective Activation ◽  
Nitrogen Incorporation ◽  
Nitridation Process ◽  
Initial Stage ◽  
Thermal Nitridation ◽  
Silicon Nitridation

ABSTRACTIn this paper we report on the composition of thermally nitrided silicon dioxide films on silicon. Nitridation temperatures ranging from 950 to 1150ºC and nitridation times ranging from 10 to 240 s were used. The purpose of this study is to reveal the mechanisms involved in the nitridation process with emphasis on the role of hydrogen. From the temperature dependence of the amount of nitrogen in the films the effective activation energy for nitrogen incorporation in this initial stage was deduced.

Comparison between SiO2 Films and Nitridated Oxides in N2O Ambient in Terms of Bulk/Interface Trapping Properties

1994 ◽  
Vol 338 ◽  
Author(s):  
Constantin Papadas ◽  
Patrick Mortini
Keyword(s):  
Gate Oxides ◽  
Sio2 Films ◽  
Degradation Data ◽  
Nitridation Process ◽  
Advanced Technologies ◽  
Optimum Selection ◽  
Non Volatile Memory ◽  
Thermal Nitridation ◽  
Physical Degradation ◽  
Selection Of

ABSTRACTThe necessity of employing nitridation process in advanced technologies will be underlined. The different technological alternatives for preparing oxinitride layers will be traced back, followed by a review of the methods currently available for assessing the degradation features of the Si/SiO2 system. Furthermore, comparison between pure SiO2 layers and nitridated films in N2O ambient will be conducted in terms of bulk/interface trapping properties and the obtained physical degradation data will be correlated with classical reliability results. Large emphasis will be given on the trapping properties of tunnel oxides used in non—volatile memory arrays and different technological alternatives will be exploited (i.e. Rapid Thermal Nitridation, Furnace Nitridation). In addition, a similar analysis will be carried out for gate oxides. Finally, some guidelines concerning the optimum selection of the furnace nitridation conditions will be given.

scholarly journals Spark Plasma Sintered Si3N4/TiN Nanocomposites Obtained by a Colloidal Processing Route

2016 ◽  
Vol 2016 ◽  
pp. 1-9 ◽  
Author(s):  
L. A. Díaz ◽  
W. Solís ◽  
P. Peretyagin ◽  
A. Fernández ◽  
M. Morales ◽  
...  
Keyword(s):  
Glassy Phase ◽  
Mechanical Performance ◽  
Processing Route ◽  
Colloidal Processing ◽  
Nitridation Process ◽  
Plasma Sintering ◽  
Tin Nanoparticles ◽  
Colloidal Method ◽  
Spark Plasma ◽  
Thermal Nitridation

Ceramic Si3N4/TiN (22 vol%) nanocomposites have been obtained by Spark Plasma Sintering (SPS). Our colloidal processing route allows obtaining dispersed nanoparticles of TiN smaller than 50 nm avoiding the presence of agglomerates. The nanostructured starting powders were obtained by using a colloidal method where commercial Si3N4submicrometer particles were coated with anatase TiO2nanocrystals. A later nitridation process led to the formation of TiN nanoparticles on the surface of Si3N4. A second set of powders was prepared by doping the above defined powders with yttrium and aluminium precursors using also a colloidal method as sources of alumina and yttria. After thermal nitridation and SPS treatment, it has been found that the addition of oxides dopants improves the mechanical performance (KIC,σf) but increases the electrical resistivity and significantly reduces the hardness. This is due to the formation of a continuous insulating glassy phase that totally envelops the conductive TiN nanoparticles, avoiding the percolative contact between them. The combination of colloidal processing route and SPS allows the designing of tailor-made free glassy phase Si3N4/TiN nanocomposites with controlled microstructure. The microstructural features and the thermoelectrical and mechanical properties of both kinds of dense SPSed compacts are discussed in this work.

Rapid-Thermal Nitridation of SiO2 for Radiation-Hardened MOS Gate Dielectrics

1986 ◽  
Vol 33 (6) ◽  
pp. 1223-1227 ◽  
Author(s):  
Ravishankar Sundaresan ◽  
Mishel M. Matloubian ◽  
Wayne E. Bailey
Keyword(s):  
Gate Dielectrics ◽  
Radiation Hardened ◽  
Thermal Nitridation ◽  
Mos Gate

Investigation of Ultra Thin Thermal Nitrided Gate Dielectrics in Comparison to Plasma Nitrided Gate Dielectrics for High-Performance Logic Application for 65nm

2008 ◽  
Vol 573-574 ◽  
pp. 153-163
Author(s):  
Martin Trentzsch ◽  
Christian Golz ◽  
Karsten Wieczorek ◽  
Rolf Stephan ◽  
Tilo Mantei ◽  
...  
Keyword(s):  
High Performance ◽  
Gate Dielectrics ◽  
Nitrogen Concentration ◽  
Alternative Solution ◽  
Electrical Parameters ◽  
Promising Technique ◽  
Comprehensive Comparison ◽  
Thermal Nitridation ◽  
The Impact

In this work we present a comprehensive comparison of ultra thin thermally nitrided (TN) to plasma nitrided (PN) gate dielectrics (GD). We will show that thermal nitridation is a promising technique to increase the nitrogen concentration up to 25%. Furthermore, we will demonstrate that ultra thin thermally nitrided GD have the potential to be an alternative solution compared to plasma nitrided GD. This work includes the analysis of physical and electrical parameters as well as reliability results from reliability characterization. Additionally, we investigated the impact of Deuterium on electrical parameters and reliability behavior.

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