Improvement in GaN and AlGaN/GaN Schottky diode performance by reduction in epitaxial film dislocation density

2008 ◽  
Vol 26 (4) ◽  
pp. 1368 ◽  
Author(s):  
D. J. Ewing ◽  
M. A. Derenge ◽  
P. B. Shah ◽  
U. Lee ◽  
T. S. Zheleva ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Schottky Diode ◽  
Epitaxial Film

Dislocation density control of GaN epitaxial film and its photodetector

Vacuum ◽  
2021 ◽  
pp. 110800
Author(s):  
Linhao Li ◽  
Yuhui Yang ◽  
Guojie Chen ◽  
Wenliang Wang ◽  
Hongsheng Jiang ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Epitaxial Film ◽  
Density Control

Extrinsic Gettering with Epitaxial Misfit Dislocations

1984 ◽  
Vol 36 ◽  
Author(s):  
Ali S. M. Salih ◽  
W. Maszara ◽  
H. J. Kim ◽  
G. A. Rozgonyi
Keyword(s):  
Dislocation Density ◽  
Leakage Current ◽  
Schottky Diode ◽  
Impurity Concentration ◽  
Active Surface ◽  
Epitaxial Layers ◽  
Misfit Dislocations ◽  
Chemical Analyses ◽  
Defect Reactions ◽  
Metallic Species

ABSTRACTNew results are presented on Ge doped Si epitaxial layers which contain interfacial misfit dislocations. Microscopic and chemical analyses showed the preferential gettering of several metallic species (Au, Cu, Ni, and Fe) at the misfit dislocations with semiquantitative correlation between dislocation density and the captured impurity concentration. Wafer curvature was measured and shown to be less than that for typical Si3N4 and SiO2 layers used in IC fabrication. The reduction of Schottky diode leakage current has been clearly demonstrated and attributed to gettering of residual impurities, as well as signifying that, the active surface device region is not deleteriously affected by spurious defect reactions at the buried epitaxial interface.

scholarly journals Effect of threading dislocation density on Ni∕n-GaN Schottky diode I-V characteristics

2006 ◽  
Vol 100 (2) ◽  
pp. 023709 ◽  
Author(s):  
A. R. Arehart ◽  
B. Moran ◽  
J. S. Speck ◽  
U. K. Mishra ◽  
S. P. DenBaars ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Schottky Diode ◽  
Threading Dislocation ◽  
Threading Dislocation Density

Observations of dislocation interactions with recrystallized grain boundaries

1988 ◽  
Vol 46 ◽  
pp. 628-629
Author(s):  
C. W. Price
Keyword(s):  
Dislocation Density ◽  
Grain Boundary ◽  
Strain Rate ◽  
Grain Boundaries ◽  
Dislocation Structure ◽  
Hot Deformation ◽  
Static Recrystallization ◽  
High Dislocation Density ◽  
High Angle ◽  
Dislocation Interactions

Little evidence exists on the interaction of individual dislocations with recrystallized grain boundaries, primarily because of the severely overlapping contrast of the high dislocation density usually present during recrystallization. Interesting evidence of such interaction, Fig. 1, was discovered during examination of some old work on the hot deformation of Al-4.64 Cu. The specimen was deformed in a programmable thermomechanical instrument at 527 C and a strain rate of 25 cm/cm/s to a strain of 0.7. Static recrystallization occurred during a post anneal of 23 s also at 527 C. The figure shows evidence of dissociation of a subboundary at an intersection with a recrystallized high-angle grain boundary. At least one set of dislocations appears to be out of contrast in Fig. 1, and a grainboundary precipitate also is visible. Unfortunately, only subgrain sizes were of interest at the time the micrograph was recorded, and no attempt was made to analyze the dislocation structure.

Investigation of shock-wave deformation history from recovered structure

1986 ◽  
Vol 44 ◽  
pp. 434-435
Author(s):  
M.A. Mogilevsky ◽  
L.S. Bushnev
Keyword(s):  
Shock Wave ◽  
Plastic Deformation ◽  
Dislocation Density ◽  
Shock Waves ◽  
Shock Front ◽  
Single Crystals ◽  
Residual Deformation ◽  
Deformation Structure ◽  
Deformation History ◽  
Deformation Velocity

Single crystals of Al were loaded by 15 to 40 GPa shock waves at 77 K with a pulse duration of 1.0 to 0.5 μs and a residual deformation of ∼1%. The analysis of deformation structure peculiarities allows the deformation history to be re-established.After a 20 to 40 GPa loading the dislocation density in the recovered samples was about 1010 cm-2. By measuring the thickness of the 40 GPa shock front in Al, a plastic deformation velocity of 1.07 x 108 s-1 is obtained, from where the moving dislocation density at the front is 7 x 1010 cm-2. A very small part of dislocations moves during the whole time of compression, i.e. a total dislocation density at the front must be in excess of this value by one or two orders. Consequently, due to extremely high stresses, at the front there exists a very unstable structure which is rearranged later with a noticeable decrease in dislocation density.

Temperature-Dependent Logic Failure in a GaAs Power Amplifier-Duplexer Module Caused by a Subtle Parasitic Schottky Diode

2014 ◽  
Author(s):  
Rose Emergo ◽  
Steve Brockett ◽  
Pat Hamilton
Keyword(s):  
Power Amplifier ◽  
Schottky Diode ◽  
Production Test ◽  
Temperature Dependent ◽  
Cold Temperatures ◽  
Collector Junction ◽  
Power Mode ◽  
The Difference ◽  
Base Contact ◽  
Single Power

Abstract A single power amplifier-duplexer device was submitted by a customer for analysis. The device was initially considered passing when tested against the production test. However, further electrical testing suggested that the device was stuck in a single power mode for a particular frequency band at cold temperatures only. This paper outlines the systematic isolation of a parasitic Schottky diode formed by a base contactcollector punch through process defect that pulled down the input of a NOR gate leading to the incorrect logic state. Note that this parasitic Schottky diode is parallel to the basecollector junction. It was observed that the logic failure only manifested at colder temperatures because the base contact only slightly diffused into the collector layer. Since the difference in the turn-on voltages between the base-collector junction and the parasitic Schottky diode increases with decreasing temperature, the effect of the parasitic diode is only noticeable at lower temperatures.

Methodology for Analysis of Schottky Diode Failures

2010 ◽  
Author(s):  
Bhanu P. Sood ◽  
Michael Pecht ◽  
John Miker ◽  
Tom Wanek
Keyword(s):  
Failure Mode ◽  
Schottky Diode ◽  
Failure Modes ◽  
Schottky Diodes ◽  
Failure Mechanisms ◽  
Forward Voltage ◽  
Fast Switching ◽  
Voltage Drops ◽  
The Common

Abstract Schottky diodes are semiconductor switching devices with low forward voltage drops and very fast switching speeds. This paper provides an overview of the common failure modes in Schottky diodes and corresponding failure mechanisms associated with each failure mode. Results of material level evaluation on diodes and packages as well as manufacturing and assembly processes are analyzed to identify a set of possible failure sites with associated failure modes, mechanisms, and causes. A case study is then presented to illustrate the application of a systematic FMMEA methodology to the analysis of a specific failure in a Schottky diode package.

DIFFRACTION ANALYSIS OF DEFORMED METALS: Theory, Methods, Programs

2019 ◽  
Author(s):  
Faina Satdarova
Keyword(s):  
Experimental Design ◽  
Dislocation Density ◽  
Mathematical Models ◽  
Diffraction Analysis ◽  
Experimental Research ◽  
Russian Federation ◽  
Statistical Estimation ◽  
X Rays ◽  
National University ◽  
The Russian Federation

General analysis of the distribution of crystals orientation and dislocation density in the polycrystalline system is presented. Recovered information in diffraction of X-rays adopting is new to structure states of polycrystal. Shear phase transformations in metals — at the macroscopic and microscopic levels — become a clear process. Visualizing the advances is produced by program included in package delivered. Mathematical models developing, experimental design, optimal statistical estimation, simulation the system under study and evolution process on loading serves as instrumentation. To reduce advanced methods to research and studies problem-oriented software will promote when installed. Automation programs passed a testing in the National University of Science and Technology “MISIS” (The Russian Federation, Moscow). You score an advantage in theoretical and experimental research in the field of physics of metals.

Low dislocation density AlN on sapphire prepared by double sputtering and annealing

2020 ◽  
Vol 13 (9) ◽  
pp. 095501
Author(s):  
Ding Wang ◽  
Kenjiro Uesugi ◽  
Shiyu Xiao ◽  
Kenji Norimatsu ◽  
Hideto Miyake
Keyword(s):  
Dislocation Density ◽  
Low Dislocation Density
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