Molecular beam epitaxial growth and characteristics of 1.52 μm metamorphic InAs quantum dot lasers on GaAs

2008 ◽  
Vol 26 (3) ◽  
pp. 1153 ◽  
Author(s):  
Z. Mi ◽  
C. Wu ◽  
J. Yang ◽  
P. Bhattacharya
Keyword(s):  
Quantum Dot ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Quantum Dot Lasers ◽  
Molecular Beam Epitaxial ◽  
Inas Quantum Dot ◽  
Molecular Beam Epitaxial Growth

Molecular Beam Epitaxial Growth of High Power Quantum Dot Super-Luminecent Diodes

2007 ◽  
Vol 46 (4B) ◽  
pp. 2418-2420 ◽  
Author(s):  
Sumon K. Ray ◽  
Hui Y. Liu ◽  
Tom L. Choi ◽  
Kristian M. Groom ◽  
San L. Liew ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Epitaxial Growth ◽  
High Power ◽  
Molecular Beam ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth

Molecular-beam-epitaxial growth of Ga1−xInxSb on GaAs substrates

1997 ◽  
Vol 175-176 ◽  
pp. 883-887 ◽  
Author(s):  
J.H. Roslund ◽  
O. Zsebők ◽  
G. Swenson ◽  
T.G. Andersson
Keyword(s):  
Epitaxial Growth ◽  
Molecular Beam ◽  
Molecular Beam Epitaxial ◽  
Gaas Substrates ◽  
Molecular Beam Epitaxial Growth

Molecular beam epitaxial growth of gallium nitride nanowires on atomic layer deposited aluminum oxide

2011 ◽  
Vol 334 (1) ◽  
pp. 113-117 ◽  
Author(s):  
Kevin Goodman ◽  
Vladimir Protasenko ◽  
Jai Verma ◽  
Tom Kosel ◽  
Grace Xing ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Aluminum Oxide ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth
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