Molecular-beam epitaxial growth and characteristics of highly uniform InAs∕GaAs quantum dot layers

Zetian Mi; Pallab Bhattacharya

doi:10.1063/1.1985969

Molecular-beam epitaxial growth and characteristics of highly uniform InAs∕GaAs quantum dot layers

Journal of Applied Physics ◽

10.1063/1.1985969 ◽

2005 ◽

Vol 98 (2) ◽

pp. 023510 ◽

Cited By ~ 46

Author(s):

Zetian Mi ◽

Pallab Bhattacharya

Keyword(s):

Quantum Dot ◽

Epitaxial Growth ◽

Molecular Beam ◽

Molecular Beam Epitaxial ◽

Gaas Quantum Dot ◽

Molecular Beam Epitaxial Growth ◽

Highly Uniform

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Molecular Beam Epitaxial Growth of High Power Quantum Dot Super-Luminecent Diodes

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.2418 ◽

2007 ◽

Vol 46 (4B) ◽

pp. 2418-2420 ◽

Cited By ~ 6

Author(s):

Sumon K. Ray ◽

Hui Y. Liu ◽

Tom L. Choi ◽

Kristian M. Groom ◽

San L. Liew ◽

...

Keyword(s):

Quantum Dot ◽

Epitaxial Growth ◽

High Power ◽

Molecular Beam ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth

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Highly stacked InGaAs quantum dot laser diodes fabricated by ultrahigh-rate molecular beam epitaxial growth technique

physica status solidi (c) ◽

10.1002/pssc.201100287 ◽

2012 ◽

Vol 9 (2) ◽

pp. 226-229 ◽

Cited By ~ 5

Author(s):

Fumihiko Tanoue ◽

Hiroharu Sugawara ◽

Kouichi Akahane ◽

Naokatsu Yamamoto

Keyword(s):

Quantum Dot ◽

Epitaxial Growth ◽

Molecular Beam ◽

Laser Diodes ◽

Growth Technique ◽

Molecular Beam Epitaxial ◽

Quantum Dot Laser ◽

Molecular Beam Epitaxial Growth

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Molecular beam epitaxial growth and characteristics of 1.52 μm metamorphic InAs quantum dot lasers on GaAs

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.2889386 ◽

2008 ◽

Vol 26 (3) ◽

pp. 1153 ◽

Cited By ~ 27

Author(s):

Z. Mi ◽

C. Wu ◽

J. Yang ◽

P. Bhattacharya

Keyword(s):

Quantum Dot ◽

Epitaxial Growth ◽

Molecular Beam ◽

Quantum Dot Lasers ◽

Molecular Beam Epitaxial ◽

Inas Quantum Dot ◽

Molecular Beam Epitaxial Growth

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Molecular beam epitaxial growth and characteristics of ultra-low threshold 1.45μm metamorphic InAs quantum dot lasers on GaAs

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2006.11.112 ◽

2007 ◽

Vol 301-302 ◽

pp. 923-926 ◽

Cited By ~ 15

Author(s):

Z. Mi ◽

J. Yang ◽

P. Bhattacharya

Keyword(s):

Quantum Dot ◽

Epitaxial Growth ◽

Molecular Beam ◽

Quantum Dot Lasers ◽

Molecular Beam Epitaxial ◽

Low Threshold ◽

Inas Quantum Dot ◽

Molecular Beam Epitaxial Growth

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Metalorganic molecular beam epitaxial growth of highly uniform InGaAsP quantum well structures using an indium-free holder

Journal of Crystal Growth ◽

10.1016/0022-0248(94)90123-6 ◽

1994 ◽

Vol 141 (1-2) ◽

pp. 299-303 ◽

Cited By ~ 10

Author(s):

Hideo Sugiura ◽

Manabu Mitsuhara ◽

Ryuzo Iga ◽

Norio Yamamoto

Keyword(s):

Quantum Well ◽

Epitaxial Growth ◽

Molecular Beam ◽

Quantum Well Structures ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth ◽

Highly Uniform

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Molecular beam epitaxial growth of site-controlled InAs quantum dot arrays using templates fabricated by the Nano-Jet Probe method

Physica E Low-dimensional Systems and Nanostructures ◽

10.1016/j.physe.2007.08.070 ◽

2008 ◽

Vol 40 (6) ◽

pp. 1794-1796 ◽

Cited By ~ 4

Author(s):

S. Ohkouchi ◽

Y. Sugimoto ◽

N. Ozaki ◽

H. Ishikawa ◽

K. Asakawa

Keyword(s):

Quantum Dot ◽

Epitaxial Growth ◽

Molecular Beam ◽

Probe Method ◽

Molecular Beam Epitaxial ◽

Inas Quantum Dot ◽

Molecular Beam Epitaxial Growth

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Photoluminescence Study of Self-Assembled InGaAs Quantum Dot Structure Prepared by Ultrahigh-rate Molecular Beam Epitaxial Growth Technique

JSAP-OSA Joint Symposia 2014 Abstracts ◽

10.1364/jsap.2014.20p_c1_4 ◽

2014 ◽

Author(s):

H. Sugawara ◽

F. Tanoue ◽

S. Kitamura ◽

T. Katsuyama ◽

K. Akahane ◽

...

Keyword(s):

Quantum Dot ◽

Epitaxial Growth ◽

Molecular Beam ◽

Growth Technique ◽

Photoluminescence Study ◽

Molecular Beam Epitaxial ◽

Self Assembled ◽

Molecular Beam Epitaxial Growth

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Molecular beam epitaxial growth of high quality InAs/GaAs quantum dots for 1.3-${\rm{\mu }}{\rm{m}}$ quantum dot lasers

Chinese Physics B ◽

10.1088/1674-1056/28/7/078104 ◽

2019 ◽

Vol 28 (7) ◽

pp. 078104

Author(s):

Hui-Ming Hao ◽

Xiang-Bin Su ◽

Jing Zhang ◽

Hai-Qiao Ni ◽

Zhi-Chuan Niu

Keyword(s):

Quantum Dots ◽

Quantum Dot ◽

Epitaxial Growth ◽

Molecular Beam ◽

Quantum Dot Lasers ◽

High Quality ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth

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Time-Resolved Photoluminescence Study of InGaAs Quantum Dot Structure Prepared by Ultrahigh-rate Molecular Beam Epitaxial Growth Technique

10.1109/islc.2014.206 ◽

2014 ◽

Author(s):

H. Sugawara ◽

F. Tanoue ◽

S. Kitamura ◽

T. Katsuyama ◽

K. Akahane ◽

...

Keyword(s):

Quantum Dot ◽

Epitaxial Growth ◽

Molecular Beam ◽

Time Resolved ◽

Growth Technique ◽

Photoluminescence Study ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth ◽

Time Resolved Photoluminescence

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Molecular-beam-epitaxial growth of Ga1−xInxSb on GaAs substrates

Journal of Crystal Growth ◽

10.1016/s0022-0248(96)00978-5 ◽

1997 ◽

Vol 175-176 ◽

pp. 883-887 ◽

Cited By ~ 3

Author(s):

J.H. Roslund ◽

O. Zsebők ◽

G. Swenson ◽

T.G. Andersson

Keyword(s):

Epitaxial Growth ◽

Molecular Beam ◽

Molecular Beam Epitaxial ◽

Gaas Substrates ◽

Molecular Beam Epitaxial Growth

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