Time-Resolved Photoluminescence Study of InGaAs Quantum Dot Structure Prepared by Ultrahigh-rate Molecular Beam Epitaxial Growth Technique

2014 ◽  
Author(s):  
H. Sugawara ◽  
F. Tanoue ◽  
S. Kitamura ◽  
T. Katsuyama ◽  
K. Akahane ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Time Resolved ◽  
Growth Technique ◽  
Photoluminescence Study ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth ◽  
Time Resolved Photoluminescence

Molecular Beam Epitaxial Growth of High Power Quantum Dot Super-Luminecent Diodes

2007 ◽  
Vol 46 (4B) ◽  
pp. 2418-2420 ◽  
Author(s):  
Sumon K. Ray ◽  
Hui Y. Liu ◽  
Tom L. Choi ◽  
Kristian M. Groom ◽  
San L. Liew ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Epitaxial Growth ◽  
High Power ◽  
Molecular Beam ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth

Molecular-beam-epitaxial growth of Ga1−xInxSb on GaAs substrates

1997 ◽  
Vol 175-176 ◽  
pp. 883-887 ◽  
Author(s):  
J.H. Roslund ◽  
O. Zsebők ◽  
G. Swenson ◽  
T.G. Andersson
Keyword(s):  
Epitaxial Growth ◽  
Molecular Beam ◽  
Molecular Beam Epitaxial ◽  
Gaas Substrates ◽  
Molecular Beam Epitaxial Growth
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