Real-time mass spectroscopy of reflected fluxes during molecular beam epitaxy growth of HgCdTe

R. H. Sewell; J. M. Dell; L. Faraone

doi:10.1116/1.2841525

Real-time mass spectroscopy of reflected fluxes during molecular beam epitaxy growth of HgCdTe

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.2841525 ◽

2008 ◽

Vol 26 (3) ◽

pp. 1068 ◽

Cited By ~ 1

Author(s):

R. H. Sewell ◽

J. M. Dell ◽

L. Faraone

Keyword(s):

Molecular Beam Epitaxy ◽

Real Time ◽

Mass Spectroscopy ◽

Molecular Beam ◽

Molecular Beam Epitaxy Growth

Download Full-text

Simultaneous reflection high-energy electron diffraction oscillations and mass spectroscopy investigations during molecular beam epitaxy growth of (001) GaAs - smooth surfaces or stoichiometric films?

Journal of Crystal Growth ◽

10.1016/0022-0248(95)80192-f ◽

1995 ◽

Vol 150 ◽

pp. 117-122 ◽

Cited By ~ 7

Author(s):

Ch. Heyn ◽

M. Harsdorff

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Diffraction ◽

Mass Spectroscopy ◽

Molecular Beam ◽

High Energy ◽

Energy Electron ◽

Molecular Beam Epitaxy Growth ◽

Smooth Surfaces ◽

High Energy Electron

Download Full-text

Real‐time observation of molecular beam epitaxy growth on mesa‐etched GaAs substrates by scanning microprobe reflection high‐energy electron diffraction

Applied Physics Letters ◽

10.1063/1.102881 ◽

1990 ◽

Vol 56 (25) ◽

pp. 2542-2544 ◽

Cited By ~ 66

Author(s):

M. Hata ◽

T. Isu ◽

A. Watanabe ◽

Y. Katayama

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Diffraction ◽

Real Time ◽

Molecular Beam ◽

High Energy ◽

Molecular Beam Epitaxy Growth ◽

High Energy Electron ◽

Gaas Substrates ◽

Time Observation ◽

Real Time Observation

Download Full-text

Optical monitoring of molecular beam epitaxy growth of AlN∕GaN using single-wavelength laser interferometry: A simple method of tracking real-time changes in growth rate

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.2723760 ◽

2007 ◽

Vol 25 (3) ◽

pp. 1066 ◽

Cited By ~ 1

Author(s):

C. L. Griffiths ◽

K. J. Weeks

Keyword(s):

Growth Rate ◽

Molecular Beam Epitaxy ◽

Real Time ◽

Molecular Beam ◽

Laser Interferometry ◽

Molecular Beam Epitaxy Growth ◽

Optical Monitoring ◽

Simple Method ◽

Time Changes

Download Full-text

Real time control of InxGa1−xN molecular beam epitaxy growth

Applied Physics Letters ◽

10.1063/1.120970 ◽

1998 ◽

Vol 72 (9) ◽

pp. 1078-1080 ◽

Cited By ~ 68

Author(s):

N. Grandjean ◽

J. Massies

Keyword(s):

Molecular Beam Epitaxy ◽

Real Time ◽

Molecular Beam ◽

Molecular Beam Epitaxy Growth ◽

Real Time Control ◽

Time Control

Download Full-text

Nitrogen doping in molecular-beam epitaxy growth of II-VI semiconductors

Journal of Crystal Growth ◽

10.1016/s0022-0248(97)00791-4 ◽

1998 ◽

Vol 184-185 (1-2) ◽

pp. 415-418

Author(s):

T Baron

Keyword(s):

Molecular Beam Epitaxy ◽

Nitrogen Doping ◽

Molecular Beam ◽

Molecular Beam Epitaxy Growth

Download Full-text

Model for molecular‐beam‐epitaxy growth over nonplanar surfaces

Journal of Applied Physics ◽

10.1063/1.341490 ◽

1988 ◽

Vol 64 (7) ◽

pp. 3522-3527 ◽

Cited By ~ 34

Author(s):

Mitsuru Ohtsuka ◽

Seiichi Miyazawa

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Molecular Beam Epitaxy Growth

Download Full-text

Molecular beam epitaxy growth of lattice-matched multiple quantum well distributed feedback laser structures with gratings defined by implantation enhanced intermixing

Journal of Crystal Growth ◽

10.1016/0022-0248(95)80153-4 ◽

1995 ◽

Vol 150 ◽

pp. 1323-1327 ◽

Cited By ~ 2

Author(s):

H. Künzel ◽

J. Böttcher ◽

A. Hase ◽

V. Hofsäss ◽

C. Kaden ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Distributed Feedback ◽

Molecular Beam Epitaxy Growth ◽

Multiple Quantum ◽

Distributed Feedback Laser ◽

Lattice Matched

Download Full-text

Molecular beam epitaxy growth of GaAsBi using As2 and As4

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2013.12.008 ◽

2014 ◽

Vol 390 ◽

pp. 120-124 ◽

Cited By ~ 38

Author(s):

Robert D. Richards ◽

Faebian Bastiman ◽

Christopher J. Hunter ◽

Danuta F. Mendes ◽

Abdul R. Mohmad ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Molecular Beam Epitaxy Growth

Download Full-text

Molecular beam epitaxy growth and characterization of AlGaN epilayers in nitrogen-rich condition on Si substrate

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2021.106099 ◽

2021 ◽

Vol 135 ◽

pp. 106099

Author(s):

Qihua Zhang ◽

Xue Yin ◽

Eli Martel ◽

Songrui Zhao

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Molecular Beam Epitaxy Growth ◽

Si Substrate ◽

Rich Condition

Download Full-text

Surface segregation of Sb on Si(100) during molecular beam epitaxy growth

Surface Science ◽

10.1016/0039-6028(88)90454-2 ◽

1988 ◽

Vol 193 (3) ◽

pp. 569-578 ◽

Cited By ~ 142

Author(s):

H. Jorke

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Surface Segregation ◽

Molecular Beam Epitaxy Growth

Download Full-text