Real‐time observation of molecular beam epitaxy growth on mesa‐etched GaAs substrates by scanning microprobe reflection high‐energy electron diffraction

M. Hata; T. Isu; A. Watanabe; Y. Katayama

doi:10.1063/1.102881

Real‐time observation of molecular beam epitaxy growth on mesa‐etched GaAs substrates by scanning microprobe reflection high‐energy electron diffraction

Applied Physics Letters ◽

10.1063/1.102881 ◽

1990 ◽

Vol 56 (25) ◽

pp. 2542-2544 ◽

Cited By ~ 66

Author(s):

M. Hata ◽

T. Isu ◽

A. Watanabe ◽

Y. Katayama

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Diffraction ◽

Real Time ◽

Molecular Beam ◽

High Energy ◽

Molecular Beam Epitaxy Growth ◽

High Energy Electron ◽

Gaas Substrates ◽

Time Observation ◽

Real Time Observation

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Real-Time Observation of GaAs(001) Surfaces During Molecular Beam Epitaxy by Scanning Microprobe Reflection High Energy Electron Diffraction

Japanese Journal of Applied Physics ◽

10.1143/jjap.27.l2259 ◽

1988 ◽

Vol 27 (Part 2, No. 12) ◽

pp. L2259-L2261 ◽

Cited By ~ 31

Author(s):

Toshiro Isu ◽

Akiyoshi Watanabe ◽

Masayuki Hata ◽

Yoshifumi Katayama

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Diffraction ◽

Real Time ◽

Molecular Beam ◽

High Energy ◽

Energy Electron ◽

High Energy Electron ◽

Time Observation ◽

Real Time Observation

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Real Time Observation of Reflectance Anisotropy and Reflection High-Energy Electron Diffraction Intensity Oscillations During Gas-Source Molecular-Beam-Epitaxy Growth of Si and SiGe on Si(001)

Physical Review Letters ◽

10.1103/physrevlett.74.3213 ◽

1995 ◽

Vol 74 (16) ◽

pp. 3213-3216 ◽

Cited By ~ 31

Author(s):

A. R. Turner ◽

M. E. Pemble ◽

J. M. Fernández ◽

B. A. Joyce ◽

J. Zhang ◽

...

Keyword(s):

Electron Diffraction ◽

Molecular Beam ◽

High Energy ◽

Molecular Beam Epitaxy Growth ◽

High Energy Electron ◽

Diffraction Intensity ◽

Reflectance Anisotropy ◽

Gas Source ◽

Time Observation ◽

Real Time Observation

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In-situ characterization of II/VI molecular beam epitaxy growth using reflection high-energy electron diffraction oscillations

Journal of Crystal Growth ◽

10.1016/0022-0248(94)91270-x ◽

1994 ◽

Vol 137 (1-2) ◽

pp. 187-194 ◽

Cited By ~ 12

Author(s):

J.M. Gaines

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Diffraction ◽

Molecular Beam ◽

High Energy ◽

Energy Electron ◽

Molecular Beam Epitaxy Growth ◽

High Energy Electron ◽

In Situ Characterization

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The molecular beam epitaxy growth of InGaAs on GaAs(100) studied by in situ scanning tunneling microscopy and reflection high-energy electron diffraction

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.585762 ◽

1991 ◽

Vol 9 (4) ◽

pp. 2189 ◽

Cited By ~ 32

Author(s):

C. W. Snyder

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Diffraction ◽

Scanning Tunneling Microscopy ◽

Molecular Beam ◽

High Energy ◽

Scanning Tunneling ◽

Molecular Beam Epitaxy Growth ◽

High Energy Electron ◽

Tunneling Microscopy

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Reflectance anisotropy and reflection high-energy electron diffraction intensity oscillations during gas source molecular beam epitaxy growth of Si and SiGe on Si(001)

Journal of Crystal Growth ◽

10.1016/0022-0248(95)80093-r ◽

1995 ◽

Vol 150 ◽

pp. 1015-1019 ◽

Cited By ~ 3

Author(s):

J. Zhang ◽

A.G. Taylor ◽

J.M. Fernández ◽

B.A. Joyce ◽

A.R. Turner ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Diffraction ◽

Molecular Beam ◽

High Energy ◽

Energy Electron ◽

Molecular Beam Epitaxy Growth ◽

High Energy Electron ◽

Diffraction Intensity ◽

Reflectance Anisotropy ◽

Gas Source

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Atomic‐layer epitaxy by a flux‐interruption and annealing method and the analysis of reflection high‐energy electron diffraction oscillation overshoot in the molecular‐beam epitaxy growth of GaAs

Journal of Applied Physics ◽

10.1063/1.352976 ◽

1993 ◽

Vol 73 (7) ◽

pp. 3291-3294 ◽

Cited By ~ 4

Author(s):

Kun‐jing Lee ◽

Joseph Ya‐min Lee ◽

Yu‐jeng Chang

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Diffraction ◽

Molecular Beam ◽

Atomic Layer ◽

High Energy ◽

Energy Electron ◽

Atomic Layer Epitaxy ◽

Molecular Beam Epitaxy Growth ◽

High Energy Electron ◽

Annealing Method

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Molecular-beam epitaxy of BeTe layers on GaAs substrates studied via reflection high-energy electron diffraction

Applied Physics Letters ◽

10.1063/1.121482 ◽

1998 ◽

Vol 72 (22) ◽

pp. 2859-2861 ◽

Cited By ~ 11

Author(s):

E. Tournié ◽

V. Bousquet ◽

J.-P. Faurie

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Diffraction ◽

Molecular Beam ◽

High Energy ◽

Energy Electron ◽

High Energy Electron ◽

Gaas Substrates

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Reflection high-energy electron diffraction real-time monitoring of an etch process implemented in molecular beam epitaxy technology: hydrogen chloride versus GaAs(001) epilayers

Applied Physics A ◽

10.1007/s003390050784 ◽

1998 ◽

Vol 67 (3) ◽

pp. 357-359

Author(s):

A. Hamoudi ◽

T. Sogawa ◽

T. Saitoh ◽

J. Yumoto

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Diffraction ◽

Real Time ◽

Hydrogen Chloride ◽

Molecular Beam ◽

High Energy ◽

Energy Electron ◽

High Energy Electron ◽

Real Time Monitoring

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Phase of reflection high-energy electron-diffraction intensity oscillations during molecular-beam-epitaxy growth of GaAs(100)

Physical Review B ◽

10.1103/physrevb.40.11799 ◽

1989 ◽

Vol 40 (17) ◽

pp. 11799-11803 ◽

Cited By ~ 22

Author(s):

J. Resh ◽

K. D. Jamison ◽

J. Strozier ◽

A. Bensaoula ◽

A. Ignatiev

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Diffraction ◽

Molecular Beam ◽

High Energy ◽

Energy Electron ◽

Molecular Beam Epitaxy Growth ◽

High Energy Electron ◽

Diffraction Intensity

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Simultaneous reflection high-energy electron diffraction oscillations and mass spectroscopy investigations during molecular beam epitaxy growth of (001) GaAs - smooth surfaces or stoichiometric films?

Journal of Crystal Growth ◽

10.1016/0022-0248(95)80192-f ◽

1995 ◽

Vol 150 ◽

pp. 117-122 ◽

Cited By ~ 7

Author(s):

Ch. Heyn ◽

M. Harsdorff

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Diffraction ◽

Mass Spectroscopy ◽

Molecular Beam ◽

High Energy ◽

Energy Electron ◽

Molecular Beam Epitaxy Growth ◽

Smooth Surfaces ◽

High Energy Electron

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