Junction formation and its device impact through the nodes: From single to coimplants, from beam line to plasma, from single ions to clusters, and from rapid thermal annealing to laser thermal processing

2008 ◽  
Vol 26 (1) ◽  
pp. 267 ◽  
Author(s):  
Hans-Joachim L. Gossmann
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Thermal Processing ◽  
Beam Line ◽  
Junction Formation ◽  
Laser Thermal Processing

Rapid Thermal Annealing of Ni/Al/Si and Ni/Si Systems

1986 ◽  
Vol 74 ◽  
Author(s):  
A. Katz ◽  
Y. KOMEM
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Thermal Processing ◽  
Reference System ◽  
Diffusion Processes ◽  
Eutectic Temperature ◽  
Melting Process ◽  
Polycrystalline Layer ◽  
Smooth Interface ◽  
And Diffusion

AbstractThe effect of Rapid Thermal Annealing on phase formation and diffusion processes in the Ni(30 nm) /Al(10 nm)/Si system was studied and coxpared to a Ni(30 nm)/Si reference system. Heat treatments were carried out at temperatures between 400°C and 900°C for 2 seconds.The results obtained by means of TEM, AES and XRD indicated that the Ni/Al/Si system underwent a local melting in the intermediate Al layer at the Al/Si eutectic temperature (577°C). This reaction, due to the rapid melting process, resulted in formation of a unique layered-structure composed of a columnar polycrystalline layer (60 nm thick) of Ni2Si and NiSi adjacent to the Si substrate with relatively smooth interface and an outer layer of two separate polycrystalline films (both about 10 m thick) of Al3Ni (inside) and Ni(Al0.5Si0.5 ) (outside). Under the same rapid thermal processing conditions the Ni/Si reference system underwent a solid state reaction which resulted in the formation of a polycrystalline layer (60 nm thick) composed of Ni2Si and NiSi as well as NiSi2.

Rapid thermal annealing of Si paste film and pn-junction formation

2020 ◽  
Vol 31 (38) ◽  
pp. 385202
Author(s):  
Huan Zhu ◽  
Morihiro Sakamoto ◽  
Ting Pan ◽  
Takaya Fujisaki ◽  
Hiroshige Matsumoto ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Pn Junction ◽  
Junction Formation

Rapid Thermal Annealing and Oxidation of Silicon Wafers with Back-Side Films

1997 ◽  
Vol 470 ◽  
Author(s):  
A. T. Fiory
Keyword(s):  
Thermal Oxidation ◽  
Sheet Resistance ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Temperature Control ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Oxide Thickness ◽  
Back Side ◽  
Control Accuracy

ABSTRACTTemperatures for lamp-heated rapid thermal processing of wafers with various back-side films were controlled by a Lucent Technologies pyrometer which uses a/c lamp ripple to compensate for emissivity. Process temperatures for anneals of arsenic and boron implants were inferred from post-anneal sheet resistance, and for rapid thermal oxidation, from oxide thickness. Results imply temperature control accuracy of 12°C to 17°C at 3 standard deviations.

Rapid thermal annealing of spin-coated phosphoric acid films for shallow junction formation

1997 ◽  
Vol 71 (3) ◽  
pp. 392-394 ◽  
Author(s):  
S. Sivoththaman ◽  
W. Laureys ◽  
J. Nijs ◽  
R. Mertens
Keyword(s):  
Phosphoric Acid ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Shallow Junction ◽  
Junction Formation

Junction Formation in Silicon by Rapid Thermal Annealing

1993 ◽  
Vol 300 ◽  
Author(s):  
Richard B. Fair
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Defect Formation ◽  
Annealing Process ◽  
Dopant Activation ◽  
The Past ◽  
Silicon Devices ◽  
Transient Diffusion ◽  
Junction Formation ◽  
Ion Implanted

ABSTRACTThe feasibility of using isothermal RTA in annealing ion implanted layers for forming junctions has been investigated for the past 10 years. While many of the scientific details surrounding defect formation, transient diffusion and dopant activation remain to be clarified, RTA intrinsically is a viable annealing process which is essential for fabricating advanced silicon devices.

Characteristics of Arsenic Doped Polycrystalline Silicon-Gate Capacitors After Rapid Thermal Processing

1987 ◽  
Vol 106 ◽  
Author(s):  
R. Angelucci ◽  
C. Y. Wong ◽  
J. Y.-C. Sun ◽  
G. Scilla ◽  
P. A. McFarland ◽  
...  
Keyword(s):  
Work Function ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Thermal Processing ◽  
Polycrystalline Silicon ◽  
Rapid Thermal Processing ◽  
Interface States ◽  
Fixed Charges ◽  
Polysilicon Gate

ABSTRACTThe feasibility and advantages of using rapid thermal annealing to achieve a proper n+ polysilicon work function are demonstrated. Our data shows that RTA can be used to activate arsenic in the polysilicon gate after a regular furnace anneal or to diffuse and activate arsenic without any prior furnace anneal. Interface states and fixed charges due to RTA can be annealed out at 500°C for 30 min in forming gas. New insights into the diffusion, segregation, and activation of As in polysilicon during furnace and/or rapid thermal annealing have been obtained.

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