Effect of oxygen concentration on the spike formation during reactive ion etching of SiC using the mixed gas plasma of NF3 and O2
2007 ◽
Vol 25
(2)
◽
pp. 391-400
◽
Keyword(s):
Keyword(s):
2003 ◽
Vol 169-170
◽
pp. 203-207
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1998 ◽
Vol 16
(2)
◽
pp. 670
2001 ◽
Vol 2
(3-4)
◽
pp. 563-569
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Keyword(s):