The Eighth International Conference on Advanced Semiconductor Devices and Microsystems
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9781424485741

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Model for evaluation of terahertz plasma resonances in HEMT-based devices with grating gate

The Eighth International Conference on Advanced Semiconductor Devices and Microsystems ◽

10.1109/asdam.2010.5666322 ◽

2010 ◽

Author(s):

Irina Khmyrova ◽

Ryosuke Yamase ◽

Norikazu Watanabe

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Nanoscaled SiGe based MOSETs

The Eighth International Conference on Advanced Semiconductor Devices and Microsystems ◽

10.1109/asdam.2010.5666331 ◽

2010 ◽

Author(s):

Mikael Ostling

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Comparison of AlGaN/GaN HFETs and MOSHFETs in prospect of oscillator design

The Eighth International Conference on Advanced Semiconductor Devices and Microsystems ◽

10.1109/asdam.2010.5666328 ◽

2010 ◽

Author(s):

A. Fox ◽

M. Mikulics ◽

B. Strang ◽

M. Marso ◽

D. Grutzmacher ◽

...

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Fabrication of novel high frequency and high breakdown InAlAs-InGaAs pHEMTs

The Eighth International Conference on Advanced Semiconductor Devices and Microsystems ◽

10.1109/asdam.2010.5666354 ◽

2010 ◽

Author(s):

M. Mohamad Isa ◽

D. Saguatti ◽

G. Verzellesi ◽

A. Chini ◽

K. W. Ian ◽

...

Keyword(s):

High Frequency

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Study of temperature distribution in the channels of AlGaN/GaN HEMT devices by μ- Raman characterization techniques

The Eighth International Conference on Advanced Semiconductor Devices and Microsystems ◽

10.1109/asdam.2010.5666315 ◽

2010 ◽

Author(s):

J. Kovac ◽

S. Flickyngerova ◽

S. K. Jha ◽

E. V. Jelenkovic ◽

...

Keyword(s):

Temperature Distribution ◽

Gan Hemt ◽

Characterization Techniques ◽

Raman Characterization

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On the identification of trap location in AlGaN/GaN HEMTs during electrical stress

The Eighth International Conference on Advanced Semiconductor Devices and Microsystems ◽

10.1109/asdam.2010.5666318 ◽

2010 ◽

Cited By ~ 2

Author(s):

M. Tapajna ◽

R. J. T. Simms ◽

Y. Pei ◽

U. K. Mishra ◽

M. Kuball

Keyword(s):

Electrical Stress ◽

Trap Location ◽

Gan Hemts

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SIMS depth profile characterisation of InAlN/GaN structures

The Eighth International Conference on Advanced Semiconductor Devices and Microsystems ◽

10.1109/asdam.2010.5666363 ◽

2010 ◽

Author(s):

A. Vincze ◽

J. Kovac ◽

H. Behmenburg ◽

R. Srnanek ◽

F. Uherek ◽

...

Keyword(s):

Depth Profile ◽

Sims Depth Profile

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Temperature dependence of the pyroelectric behaviour in GaN/AlGaN

The Eighth International Conference on Advanced Semiconductor Devices and Microsystems ◽

10.1109/asdam.2010.5666340 ◽

2010 ◽

Cited By ~ 1

Author(s):

A. Laposa ◽

J. Jakovenko ◽

M. Husak

Keyword(s):

Temperature Dependence ◽

Pyroelectric Behaviour

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Single photon detection by means of SiGe-quantum dot arrays

The Eighth International Conference on Advanced Semiconductor Devices and Microsystems ◽

10.1109/asdam.2010.5666339 ◽

2010 ◽

Author(s):

J. Moers ◽

N. P. Stepina ◽

J. Gerharz ◽

E.S. Koptev ◽

A.I. Nikiforov ◽

...

Keyword(s):

Quantum Dot ◽

Single Photon ◽

Single Photon Detection ◽

Photon Detection ◽

Sige Quantum Dot

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Structure and optical properties of the hydrogen diluted a-Si:H thin films prepared by PECVD with different deposition temperatures

The Eighth International Conference on Advanced Semiconductor Devices and Microsystems ◽

10.1109/asdam.2010.5666360 ◽

2010 ◽

Cited By ~ 1

Author(s):

Marie Netrvalova ◽

Marinus Fischer ◽

Jarmila Mullerova ◽

Miro Zeman ◽

Pavol Sutta

Keyword(s):

Thin Films ◽

Optical Properties

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The Eighth International Conference on Advanced Semiconductor Devices and MicrosystemsLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Model for evaluation of terahertz plasma resonances in HEMT-based devices with grating gate

Nanoscaled SiGe based MOSETs

Comparison of AlGaN/GaN HFETs and MOSHFETs in prospect of oscillator design

Fabrication of novel high frequency and high breakdown InAlAs-InGaAs pHEMTs

Study of temperature distribution in the channels of AlGaN/GaN HEMT devices by μ- Raman characterization techniques

On the identification of trap location in AlGaN/GaN HEMTs during electrical stress

SIMS depth profile characterisation of InAlN/GaN structures

Temperature dependence of the pyroelectric behaviour in GaN/AlGaN

Single photon detection by means of SiGe-quantum dot arrays

Structure and optical properties of the hydrogen diluted a-Si:H thin films prepared by PECVD with different deposition temperatures

The Eighth International Conference on Advanced Semiconductor Devices and Microsystems
Latest Publications